nte16007 NTE Electronics, Inc., nte16007 Datasheet
nte16007
Manufacturer Part Number
nte16007
Description
Silicon Npn Transistorgeneral Purpose For Medium Power Applications
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE16007.pdf
(2 pages)
Description:
The NTE16007 is a silicon NPN diffused-junction power transistor in a TO8 type package intended
for a wide variety of applications in industrial and military equipment. This device is particularly useful
in power-switching circuits such as in DC-to-DC converters, inverters, choppers, solenoid and relay
controls; and as class A and class B push-pull audio and servo amplifiers.
Absolute Maximum Ratings:
Collector-to -Emitter Voltage, V
Collector-to-Base Voltage, V
Emitter-to-Base Voltage, V
Continuous Collector Current, I
Total Power Dissipation, P
Operating Temperature Range, T
Storage Temperature Range, T
Electrical Characteristics:
Note 1. Pulse Test: Pulse Width = 300μs, Duty Cycle = 2.0%.
OFF Characteristics
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON Characteristics (Note 1)
Forward-Current Transfer Ratio
Collector-Emitter Saturation Voltage
T
T
A
C
= +25°C
= +25°C
Derate Linearly Above +25°C
Derate Linearly Above +25°C
Parameter
General Purpose for Medium Power Applications
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
EBO
CBO
C
stg
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon NPN Transistor
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
V
Symbol
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
(BR)CEO
(BR)CBO
(BR)CEX
I
I
CE(sat)
h
CBO
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE16007
I
I
V
V
V
V
I
C
C
C
EB
CB
EB
CE
= 100mA
= 100μA
= 750mA, I
= 1.5V, I
= 12V
= 50V
= 4V, I
Test Conditions
C
C
= 750mA
B
= 0.25mA
= 40mA
Min
100
100
55
35
-
-
-
Typ
-65 to +200°C
-65 to +200°C
-
-
-
-
-
-
-
0.010W/°C
0.143W/°C
Max Unit
0.75
100
15
15
-
-
-
14.1W
100V
25W
μA
μA
55V
12V
V
V
V
V
3A
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nte16007 Summary of contents
Page 1
... General Purpose for Medium Power Applications Description: The NTE16007 is a silicon NPN diffused-junction power transistor in a TO8 type package intended for a wide variety of applications in industrial and military equipment. This device is particularly useful in power-switching circuits such as in DC-to-DC converters, inverters, choppers, solenoid and relay controls ...
Page 2
Electrical Characteristics (Con't): Parameter Dynamic Characteristics Forward Current Transfer Ratio Output Capacitance Switching Characteristics Turn-On Time .650 (16.51) Dia Max .524 (13.31) Dia Max Symbol Test Conditions 28V 5mA hfb ...