2sd1819g Panasonic Corporation of North America, 2sd1819g Datasheet
2sd1819g
Manufacturer Part Number
2sd1819g
Description
Small Signal Bipolar Transistors
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SD1819G.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2sd1819g0L
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Company:
Part Number:
2sd1819gRL
Manufacturer:
PANA
Quantity:
2 548
Transistors
2SD1819G
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SB1218G
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2007
• High forward current transfer ratio h
• Low collector-emitter saturation voltage V
• S-Mini type package, allowing downsizing of the equipment and
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
automatic insertion through the tape pacing and the magazine
pacing.
2. * : Rank classification
Product of no-rank is not classified and have no marking symbol for rank.
Marking symbol
Parameter
Rank
Parameter
h
FE1
This product complies with the RoHS Directive (EU 2002/95/EC).
160 to 260
ZQ
Q
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
FE
T
V
I
P
CBO
I
T
V
V
V
h
CEO
EBO
a
CP
I
I
stg
h
C
CE(sat)
C
C
FE1
CBO
210 to 340
j
CEO
f
CBO
CEO
EBO
FE2
= 25°C
T
ob
*
ZR
CE(sat)
R
−55 to +150
Rating
I
I
I
V
V
V
V
I
V
V
C
C
E
C
100
200
150
150
CB
CE
CE
CE
CB
CB
60
50
= 10 µA, I
= 2 mA, I
= 10 µA, I
= 100 mA, I
7
SJC00372AED
= 10 V, I
= 10 V, I
= 2 V, I
= 10 V, I
= 20 V, I
= 10 V, I
290 to 460
ZS
B
C
S
C
E
Conditions
Unit
E
mW
B
C
E
E
mA
mA
= 0
= 100 mA
°C
°C
= 0
= 0
B
V
V
V
= −2 mA, f = 200 MHz
= 0
= 0
= 2 mA
= 0, f = 1 MHz
= 10 mA
160 to 460
No rank
■ Package
• Code
• Marking Symbol: Z
• Pin Name
Z
SMini3-F2
1: Base
2: Emitter
3: Collector
Min
160
60
50
90
7
Typ
150
0.1
3.5
Max
100
460
0.1
0.3
MHz
Unit
µA
µA
pF
V
V
V
V
1
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2sd1819g Summary of contents
Page 1
... This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1819G Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1218G ■ Features • High forward current transfer ratio h • Low collector-emitter saturation voltage V • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape pacing and the magazine pacing ...
Page 2
... This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1819G 200 160 120 120 160 ( °C ) Ambient temperature T a 200 = 160 120 25°C = 75°C −25° 0.4 0.8 1.2 1.6 2 Base-emitter voltage V BE ...
Page 3
This product complies with the RoHS Directive (EU 2002/95/EC). SMini3-F2 2.00 ±0.20 +0.05 0.30 − 0. (0.65) (0.65) 1.30 ±0.10 (5°) Unit: mm +0.05 0.13 − 0.02 ...
Page 4
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...