2sd1821g Panasonic Corporation of North America, 2sd1821g Datasheet
2sd1821g
Manufacturer Part Number
2sd1821g
Description
Small Signal Bipolar Transistors
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SD1821G.pdf
(4 pages)
Transistors
2SD1821G
Silicon NPN epitaxial planar type
For high breakdown voltage low-frequency and low-noise
amplification
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2007
• High collector-emitter voltage (Base open) V
• Low noise voltage NV
• S-Mini type package, allowing downsizing of the equipment and
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Noise voltage
automatic insertion through the tape packing and the magazine
packing.
2. * : Rank classification
Parameter
Rank
Parameter
h
FE
This product complies with the RoHS Directive (EU 2002/95/EC).
130 to 220
*
Q
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
I
P
CBO
I
T
V
V
CEO
EBO
a
CP
I
stg
C
CE(sat)
C
NV
C
h
CBO
185 to 330
j
f
CEO
EBO
= 25°C
FE
T
ob
R
−55 to +150
CEO
Rating
I
I
V
V
I
V
V
V
R
C
E
C
185
185
100
150
150
g
CB
CE
CB
CB
CE
50
= 100 µA, I
= 10 µA, I
= 30 mA, I
5
= 100 kΩ, Function = FLAT
SJC00374AED
= 10 V, I
= 5 V, I
= 10 V, I
= 100 V, I
= 10 V, I
C
C
Conditions
C
Unit
B
E
mW
E
mA
mA
B
= 10 mA
°C
°C
= 0
V
V
V
E
= −10 mA, f = 200 MHz
= 1 mA, G
= 3 mA
= 0, f = 1 MHz
= 0
= 0
V
= 80 dB
■ Package
• Code
• Marking Symbol: L
• Pin Name
SMini3-F2
1: Base
2: Emitter
3: Collector
Min
185
130
5
Typ
150
150
2.3
Max
330
1
1
MHz
Unit
mV
µA
pF
V
V
V
1
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2sd1821g Summary of contents
Page 1
... This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1821G Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification ■ Features • High collector-emitter voltage (Base open) V • Low noise voltage NV • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing ...
Page 2
... This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1821G 240 200 160 120 120 160 ( °C ) Ambient temperature T a CE(sat) C 100 = 75° 25°C −25°C 0.1 0.01 0 100 ( mA ) Collector current I C ...
Page 3
This product complies with the RoHS Directive (EU 2002/95/EC). SMini3-F2 2.00 ±0.20 +0.05 0.30 − 0. (0.65) (0.65) 1.30 ±0.10 (5°) Unit: mm +0.05 0.13 − 0.02 ...
Page 4
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...