2sd1820g Panasonic Corporation of North America, 2sd1820g Datasheet
2sd1820g
Manufacturer Part Number
2sd1820g
Description
Small Signal Bipolar Transistors
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SD1820G.pdf
(4 pages)
Transistors
2SD1820G
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SB1219G
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2007
• Low collector-emitter saturation voltage V
• S-Mini type package, allowing downsizing of the equipment and
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
automatic insertion through the tape packing and the magazine
packing.
2. * 1: Pulse measurement
* 2: Rank classification
Product of no-rank is not classified and have no marking symbol for rank.
Marking symbol
Parameter
Parameter
Rank
h
FE1
* 1
This product complies with the RoHS Directive (EU 2002/95/EC).
* 1
85 to 170
* 1
XQ
Q
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
h
I
P
CBO
I
T
V
V
V
CEO
EBO
a
CP
I
stg
FE1
h
C
CE(sat)
C
C
CBO
j
f
CBO
CEO
EBO
FE2
= 25°C
T
ob
* 2
CE(sat)
−55 to +150
120 to 240
Rating
I
I
I
V
V
V
I
V
V
C
C
E
C
XR
500
150
150
CB
CE
CE
CB
CB
R
60
50
= 10 µA, I
= 2 mA, I
= 10 µA, I
= 300 mA, I
5
1
SJC00373AED
= 10 V, I
= 10 V, I
= 10 V, I
= 20 V, I
= 10 V, I
B
C
E
Conditions
Unit
E
mW
C
C
E
E
mA
= 0
170 to 340
°C
°C
= 0
= 0
B
V
V
V
A
= −50 mA, f = 200 MHz
= 0
= 150 mA
= 500 mA
= 0, f = 1 MHz
= 30 mA
XS
S
■ Package
• Code
• Marking Symbol: X
• Pin Name
85 to 340
SMini3-F2
1: Base
2: Emitter
3: Collector
No-rank
X
Min
60
50
85
40
5
0.35
Typ
200
6
Max
0.60
340
0.1
15
MHz
Unit
µA
pF
V
V
V
V
1
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2sd1820g Summary of contents
Page 1
... This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1820G Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1219G ■ Features • Low collector-emitter saturation voltage V • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. ■ ...
Page 2
... This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1820G 240 200 160 120 120 160 ( °C ) Ambient temperature T a CE(sat) C 100 = 75° 25°C −25°C 0.1 0.01 0.01 0 Collector current I C ...
Page 3
This product complies with the RoHS Directive (EU 2002/95/EC). SMini3-F2 2.00 ±0.20 +0.05 0.30 − 0. (0.65) (0.65) 1.30 ±0.10 (5°) Unit: mm +0.05 0.13 − 0.02 ...
Page 4
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...