2sd1847 Inchange Semiconductor Company, 2sd1847 Datasheet

2sd1847

Manufacturer Part Number

2sd1847

Description

Isc Silicon Npn Power Transistor

Manufacturer

Inchange Semiconductor Company

Datasheet

1.2SD1847.pdf (2 pages)

Current page: 1 of 2
Download datasheet (230Kb)

INCHANGE Semiconductor

isc

DESCRIPTION

·Collector-Base Breakdown Voltage-

·High Switching Speed

·Built-in Damper Diode

APPLICATIONS

·Designed for horizontal deflection output applications

ABSOLUTE MAXIMUM RATINGS(T

isc Website：www.iscsemi.cn

SYMBOL

: V

CBO

CES

EBO

stg

CBO

Silicon NPN Power Transistor

= 1500V (Min.)

Collector- Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current- Continuous

Collector Power Dissipation

@ T

Collector Power Dissipation

@ T

Junction Temperature

Storage Temperature Range

=25℃

PARAMETER

=25

℃)

-55~150

VALUE

1500

100

150

UNIT

℃

isc

Product Specification

2SD1847

Related parts for 2sd1847

2sd1847 Summary of contents

Page 1

... B B Collector Power Dissipation @ T =25℃ Collector Power Dissipation @ T =25℃ Junction Temperature J Storage Temperature Range T stg isc Website：www.iscsemi.cn =25 ℃) a VALUE UNIT 1500 V 1500 100 ℃ 150 ℃ -55~150 isc Product Specification 2SD1847 ...

Page 2

... 750V 1500V 1A 4A 10V 1A 10V 4A 1A -2A 200V CC 2 Product Specification 2SD1847 MIN TYP. MAX UNIT 7 V 8.0 V 1.5 V μ MHz 2.3 V μs 1.5 μs 0.2 ...

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