2sd1776a Panasonic Corporation of North America, 2sd1776a Datasheet
2sd1776a
Manufacturer Part Number
2sd1776a
Description
Silicon Npn Triple Diffusion Planar Type For Power Amplification With High Forward Current Transfer Ratio
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SD1776A.pdf
(4 pages)
Power Transistors
2SD1776A
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2003
• High forward current transfer ratio h
• Satisfactory linearity of forward current transfer ratio h
• Full-pack package which can be installed to the heat sink with one screw
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Base current
Collector power
Junction temperature
Storage temperature
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Turn-on time
Storage time
Fall time
dissipation
2. * : Rank classification
Parameter
Rank
Parameter
h
FE
500 to 1 000
T
a
*
= 25°C
Q
C
Symbol
V
V
V
= 25°C ± 3°C
Symbol
FE
T
V
V
I
P
I
I
T
V
CBO
CEO
EBO
C
CP
I
800 to 1 500
I
I
C
B
stg
CE(sat)
BE(sat)
C
C
h
CBO
CEO
EBO
t
t
j
f
CEO
stg
t
on
FE
= 25°C
T
ob
f
P
−55 to +150
Rating
I
V
V
V
V
I
I
V
V
I
V
C
C
C
C
100
150
0.5
2.0
CB
CE
EB
CE
CE
CB
CC
80
25
= 25 mA, I
= 1 A, I
= 1 A, I
= 1 A, I
6
2
4
SJD00232BED
= 40 V, I
= 6 V, I
= 4 V, I
= 12 V, I
= 100 V, I
= 10 V, I
= 50 V
FE
B
B
B1
= 25 mA
= 25 mA
C
C
= 25 mA, I
Conditions
Unit
B
B
C
E
= 0
= 300 mA
°C
°C
W
V
V
V
A
A
A
E
= 0
= 0
= 200 mA, f = 10 MHz
= 0, f = 1 MHz
= 0
B2
= −25 mA,
Min
500
80
1
10.0
5.5
2
±0.2
±0.2
3
5.08
2.54
Typ
0.6
2.5
1.0
40
30
1.4
0.8
φ 3.1
±0.5
±0.3
±0.1
±0.1
TO-220F-A1 Package
±0.1
1 500
Max
100
100
100
1.0
1.2
2.7
1.3
0.5
±0.2
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
±0.2
+0.2
–0.1
Unit: mm
4.2
MHz
±0.2
Unit
µA
µA
µA
pF
µs
µs
µs
V
V
V
1
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2sd1776a Summary of contents
Page 1
... Power Transistors 2SD1776A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio ■ Features • High forward current transfer ratio h • Satisfactory linearity of forward current transfer ratio h • Full-pack package which can be installed to the heat sink with one screw ■ ...
Page 2
... (1)T =Ta C (2)With a 100×100×2mm Al heat sink (3)With a 50×50×2mm Al heat sink 30 (4)Without heat sink (P =2.0W) C (1) 20 (2) 10 (3) ( 100 125 150 Ambient temperature T (°C) a BE(sat = =–25˚C C 100˚ ...
Page 3
... (1)Without heat sink (2)With a 100×100×2mm Al heat sink 10 1 −1 10 −2 10 −4 −3 −2 − Time t (s) (1) ( SJD00232BED 2SD1776A 3 ...
Page 4
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...