2sd1781kpt Chenmko Enterprise Co. Ltd., 2sd1781kpt Datasheet

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2sd1781kpt

Manufacturer Part Number
2sd1781kpt
Description
Surface Mount Npn Switching Transistor
Manufacturer
Chenmko Enterprise Co. Ltd.
Datasheet
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
V
V
V
I
I
P
T
T
C
CM
SYMBOL
stg
j
CBO
CEO
EBO
tot
* HFE(Q):D9C-
* HFE(R):NU
APPLICATION
* Telephone and proferssional communction equipment.
* Other switching applications.
FEATURE
* Small surface mounting type. (SOT-23)
* Corrector peak current (Max.=1500mA).
* Suitable for high packing density.
* Low voltage (Max.=32V) .
* High saturation current capability.
* Voltage controlled small signal switch.
CONSTRUCTION
* NPN Switching Transistor
MARKING
CIRCUIT
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current DC
peak collector current
total power dissipation
storage temperature
junction temperature
CHENMKO ENTERPRISE CO.,LTD
VOLTAGE 32 Volts
(1)
B
PARAMETER
C
E
NPN Switching Transistor
(2)
(3)
SURFACE MOUNT
CURRENT 0.8 Ampere
open emitter
open base
open collector
T
amb
CONDITIONS
25 C; note 1
Dimensions in inches and (millimeters)
.045 ( 1.15 )
.033 ( 0.85 )
.055 ( 1.40 )
.047 ( 1.20 )
(1)
(2)
.086 (2.20)
.103 ( 2.64 )
5
MIN.
(3)
2SD1781KPT
200
+150
150
.028 ( 0.70 )
.020 ( 0.50 )
40
32
0.8
1.5
5
MAX.
mW
V
V
V
A
A
C
C
SOT-23
UNIT
SOT-23
2004-3

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2sd1781kpt Summary of contents

Page 1

... T j Note 1. Transistor mounted on an FR4 printed-circuit board. SURFACE MOUNT CURRENT 0.8 Ampere Dimensions in inches and (millimeters) CONDITIONS open emitter open base open collector note 1 amb 2SD1781KPT SOT-23 (1) (3) (2) .055 ( 1.40 ) .028 ( 0.70 ) .047 ( 1.20 ) .020 ( 0.50 ) .103 ( 2.64 ) .086 (2.20) .045 ( 1.15 ) .033 ( 0.85 ) SOT-23 MIN. ...

Page 2

... RATING CHARACTERISTIC CURVES ( 2SD1781KPT ) CHARACTERISTICS unless otherwise speciÞed. amb SYMBOL PARAMETER BV collector-base breakdown voltage I CBO BV collector-emitter breakdown voltage I CEO BV emitter-base breakdown voltage EBO I collector cut-off current CBO I emitter cut-off current EBO h DC current gain FE V collector-emitter saturation CEsat voltage ...

Page 3

... RATING CHARACTERISTIC CURVES ( 2SD1781KPT ) Fig.1 Grounded emittterpropgation characteristics 1000 Ta= 500 =6V CE 100 0.5 0.2 1 0.2 0.6 0.8 1.0 1.2 1.4 0.4 0 BASE TO EMITTER VOLTAGE Fig.3 DC Current gain vs. collector current 1000 V CE 500 O Ta=100 C 200 -55 C 100 100 200 500 ...

Page 4

... RATING CHARACTERISTIC CURVES ( 2SD1781KPT ) Fig.5 Collector-emitter saturation voltage vs. collector current (2) 1000 IC/IB=10 500 200 O Ta=100 C 100 - 200 100 500 1 2 COLLECTOR CURRENT: I (A) C Fig.7 Collector output capacitance vs. collector-base voltage 100 T =25 a f=1MHZ IE= 0.1 0.2 0.5 1.0 2.0 5.0 10 COLLECTOR TO BASE VOLTAGE : V CS Fig ...

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