2sd1119g Panasonic Corporation of North America, 2sd1119g Datasheet

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2sd1119g

Manufacturer Part Number
2sd1119g
Description
Bipolar Power Transistors
Manufacturer
Panasonic Corporation of North America
Datasheet
Transistors
2SD1119G
Silicon NPN epitaxial planar type
For low-frequency power amplification
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: September 2007
Note) * : Printed circuit board: Copper foil area of 1 cm
• Low collector-emitter saturation voltage V
• Satisfactory operation performances at high efficiency with the low-
• Mini power type package, allowing downsizing of the equipment
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
voltage power supply.
and automatic insertion through the tape packing and the magazine
packing.
2. * 1: Pulse measurement
board thickness of 1.7 mm for the collector portion
* 2: Rank classification
Parameter
Rank
Parameter
h
FE1
This product complies with the RoHS Directive (EU 2002/95/EC).
230 to 380
*
* 1
Q
* 1
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
I
h
P
CBO
I
T
V
V
CEO
EBO
a
CP
I
stg
h
C
FE1
CE(sat)
C
C
CBO
340 to 600
j
f
CEO
EBO
FE2
= 25°C
T
ob
* 2
CE(sat)
R
−55 to +150
Rating
I
I
V
V
V
I
V
V
C
E
C
150
2
CB
CE
CE
CB
CB
40
25
= 1 mA, I
= 10 µA, I
= 3 A, I
7
3
5
1
or more, and the
SJD00339AED
= 2 V, I
= 2 V, I
= 6 V, I
= 10 V, I
= 20 V, I
B
B
E
C
C
= 0.1 A
C
Conditions
Unit
E
E
= −50 mA, f = 200 MHz
= 0
= 0.5 A
= 2 A
°C
°C
W
= 0
V
V
V
A
A
= 0
= 0, f = 1 MHz
■ Package
■ Marking Symbol: T
• Code
• Pin Name
MiniP3-F2
1: Base
2: Collector
3: Emitter
Min
230
150
25
7
Typ
150
Max
600
0.1
50
1
MHz
Unit
µA
pF
V
V
V
1

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2sd1119g Summary of contents

Page 1

... This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1119G Silicon NPN epitaxial planar type For low-frequency power amplification ■ Features • Low collector-emitter saturation voltage V • Satisfactory operation performances at high efficiency with the low- voltage power supply. • Mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing ...

Page 2

... This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1119G  1.2 Copper plate at the collector 2 is more than area, 1 thickness 1.0 0.8 0.6 0.4 0 100 120 140 160 ( °C ) Ambient temperature T a  CE(sat 75°C ...

Page 3

... This product complies with the RoHS Directive (EU 2002/95/EC). MiniP3-F2 4.50 ±0.10 1.60 ±0. 0.40 ±0.08 1.50 ±0.10 (5°) 3.00 ±0.15 1.50 3 0.50 ±0.08 (45°) SJD00339AED 2SD1119G Unit: mm ±0.10 0.41 ±0.03 3 ...

Page 4

Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...

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