2sd1115 Inchange Semiconductor Company, 2sd1115 Datasheet

2sd1115

Manufacturer Part Number

2sd1115

Description

Isc Silicon Npn Darlington Power Transistor

Manufacturer

Inchange Semiconductor Company

Datasheet

1.2SD1115.pdf (2 pages)

Current page: 1 of 2
Download datasheet (232Kb)

INCHANGE Semiconductor

isc

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

·High DC Current Gain

APPLICATIONS

·Designed for high voltage switching, igniter applications.

ABSOLUTE MAXIMUM RATINGS(T

isc Website：www.iscsemi.cn

SYMBOL

: V

: h

CBO

CEO

EBO

stg

CEO(SUS)

Silicon NPN Darlington Power Transistor

= 500(Min)@I

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Collector Power Dissipation

@ T

Junction Temperature

Storage Temperature Range

= 300V(Min)

=25℃

PARAMETER

= 2A

=25

℃)

-55~150

VALUE

400

300

150

UNIT

℃

isc

Product Specification

2SD1115

Related parts for 2sd1115

2sd1115 Summary of contents

Page 1

... Emitter-Base Voltage EBO I Collector Current-Continuous C I Collector Current-Peak CP Collector Power Dissipation =25℃ Junction Temperature J Storage Temperature Range T stg isc Website：www.iscsemi.cn =25 ℃) a VALUE UNIT 400 V 300 ℃ 150 ℃ -55~150 isc Product Specification 2SD1115 ...

Page 2

... I = 0.1mA 50mA 2A 20mA 2A 20mA ∞ 300V 2A 2A 20mA Product Specification 2SD1115 MIN TYP. MAX UNIT 300 V 400 1.5 V 2.0 V μA 100 500 μs 1.0 μs 22 ...

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