2sd1117 Inchange Semiconductor Company, 2sd1117 Datasheet

2sd1117

Manufacturer Part Number

2sd1117

Description

Isc Silicon Npn Power Transistor

Manufacturer

Inchange Semiconductor Company

Datasheet

1.2SD1117.pdf (2 pages)

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Download datasheet (232Kb)

INCHANGE Semiconductor

isc

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

·Low Collector-Emitter Saturation Voltage-

·Wide Area of Safe Operation

·Complement to Type 2SB850

APPLICATIONS

·Designed for audio amplifier, series regulators and general

ABSOLUTE MAXIMUM RATINGS(T

THERMAL CHARACTERISTICS

isc Website：www.iscsemi.cn

SYMBOL

: V

purpose power amplifiers.

th j-c

CBO

CEO

EBO

stg

(BR)CEO

CE(sat)

Silicon NPN Power Transistor

= 1.2V(Max) @I

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Base Current-Continuous

Collector Power Dissipation

@ T

Junction Temperature

Storage Temperature Range

Thermal Resistance, Junction to Case

= 40V(Min)

=25℃

PARAMETER

= 5A

=25

℃)

-55~150

VALUE

150

MAX

2.5

UNIT

℃/W

℃

isc

Product Specification

2SD1117

Related parts for 2sd1117

2sd1117 Summary of contents

Page 1

... C T Junction Temperature J Storage Temperature Range T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER Thermal Resistance, Junction to Case R th j-c isc Website：www.iscsemi.cn =25 ℃) a VALUE UNIT ℃ 150 ℃ -55~150 MAX UNIT ℃/W 2.5 isc Product Specification 2SD1117 ...

Page 2

... Product Specification CONDITIONS = 10mA 0.1mA 0.1mA 40V 7V 2A 2SD1117 MIN TYP. MAX UNIT 1.2 V 2.0 V μA 10 μ 240 ...

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