2sd1938 Panasonic Corporation of North America, 2sd1938 Datasheet
2sd1938
Manufacturer Part Number
2sd1938
Description
Silicon Npn Epitaxial Planar Type
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SD1938.pdf
(4 pages)
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Transistors
2SD1938(F)
Silicon NPN epitaxial planar type
For low-voltage output amplification
For muting
For DC-DC converter
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: August 2004
• Low ON resistance R
• High forward current transfer ratio h
• Mini type package, allowing downsizing of the equipment and
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-emitter voltage (Base open)
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
ON resistance
automatic insertion through the tape packing
2. * 1: Rank classification
Product of no-rank classification is not marked.
Parameter
Rank
Parameter
h
* 2
FE
on
500 to 1 500
* 1
S
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
FE
T
V
I
P
I
T
V
CBO
CEO
EBO
a
CP
I
800 to 2 500
I
C
stg
V
CE(sat)
C
R
C
h
CBO
EBO
j
f
CEO
= 25°C
FE
BE
T
ob
on
T
−55 to +150
Rating
I
V
V
V
V
I
V
V
C
C
300
500
200
150
CE
CB
EB
CE
CB
CB
50
20
25
= 1 mA, I
= 30 mA, I
SJC00313AED
= 2 V, I
= 25 V, I
= 2 V, I
= 50 V, I
= 6 V, I
= 10 V, I
500 to 2 500
No rank
B
C
C
E
Conditions
Unit
mW
C
B
E
E
mA
mA
= 0
= 4 mA
= 4 mA
= −4 mA, f = 200 MHz
°C
°C
V
V
V
= 3 mA
= 0
= 0
= 0, f = 1 MHz
Marking symbol: 3W
* 2: R
10˚
I
B
on
= 1 mA
(0.95) (0.95)
R
1
Measuremet circuit
on
2.90
1.9
=
±0.1
+0.20
–0.05
V
Min
0.40
500
3
20
V
A
2
B
− V
+0.10
–0.05
B
V
× 1 000 (Ω)
B
Typ
0.6
1.0
80
1 kΩ
V
V
V
Mini3-G1 Package
2 500
A
Max
JEDEC: SOT-346
0.1
0.1
0.1
7
0.16
EIAJ: SC-59
f = 1 kHz
V = 0.3 V
1: Base
2: Emitter
3: Collector
Unit: mm
+0.10
–0.06
MHz
Unit
µA
µA
pF
V
V
V
Ω
1
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2sd1938 Summary of contents
Page 1
... Transistors 2SD1938(F) Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter ■ Features • Low ON resistance R on • High forward current transfer ratio h • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing ■ ...
Page 2
... 250 200 150 100 100 120 20 40 140 160 ( °C ) Ambient temperature T a CE(sat 85° −25°C 0.01 25°C 0.001 1 10 100 ( Collector current 25°C ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...
Page 4
... This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components. ...