hn58c1001t-15e Renesas Electronics Corporation., hn58c1001t-15e Datasheet

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hn58c1001t-15e

Manufacturer Part Number
hn58c1001t-15e
Description
Memory>eeprom>parallel Eeprom
Manufacturer
Renesas Electronics Corporation.
Datasheet
HN58C1001 Series
1M EEPROM (128-kword
Ready/Busy and RES function
Description
Renesas Technology
word
MNOS memory technology and CMOS process and circuitry technology. It also has a 128-byte page
programming function to make the write operations faster.
Features
Rev.8.00, Nov. 27.2003, page 1 of 21
Single supply: 5.0 V
Access time: 150 ns (max)
Power dissipation
On-chip latches: address, data, CE, OE, WE
Automatic byte write: 10 ms (max)
Automatic page write (128 bytes): 10 ms (max)
Data polling and RDY/Busy
Data protection circuit on power on/off
Conforms to JEDEC byte-wide standard
Reliable CMOS with MNOS cell technology
10
10 years data retention
Software data protection
Write protection by RES pin
There are also lead free products.
4
erase/write cycles (in page mode)
8-bit. It has realized high speed, low power consumption and high reliability by employing advanced
Active: 20 mW/MHz, (typ)
Standby: 110 W (max)
's
HN58C1001 is an electrically erasable and programmable ROM organized as 131072-
10%
8-bit)
(Previous ADE-203-028G (Z) Rev.7.0)
REJ03C0145-0800Z
Nov. 27. 2003
Rev. 8.00

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hn58c1001t-15e Summary of contents

Page 1

HN58C1001 Series 1M EEPROM (128-kword Ready/Busy and RES function Description 's Renesas Technology HN58C1001 is an electrically erasable and programmable ROM organized as 131072- word 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced ...

Page 2

... HN58C1001 Series Ordering Information Type No. Access time HN58C1001FP-15 150 ns HN58C1001T-15 150 ns HN58C1001FP-15E 150 ns HN58C1001T-15E 150 ns Pin Arrangement HN58C1001FP Series Busy 1 V RDY A15 A16 31 RES 3 30 A14 A12 5 A13 A11 A10 ...

Page 3

HN58C1001 Series Pin Description Pin name A0 to A16 I/ RDY/Busy RES Block Diagram V CC High voltage generator V SS RES OE CE Control logic and timing WE RES A0 ...

Page 4

HN58C1001 Series Operation Table Operation Read Standby Write Deselect Write Inhibit V IL Data Polling V V ...

Page 5

HN58C1001 Series DC Characteristics ( + Parameter Symbol Min Input leakage current I LI Output leakage current I LO Standby V current I CC CC1 I CC2 Operating V current I CC CC3 Output low ...

Page 6

HN58C1001 Series AC Characteristics ( + Test Conditions Input pulse levels (RES pin) CC Input rise and fall time Output load: 1TTL Gate +100 ...

Page 7

HN58C1001 Series Write Cycle Parameter Address setup time Address hold time CE to write setup time (WE controlled) CE hold time (WE controlled write setup time (CE controlled) WE hold time (CE controlled write setup time ...

Page 8

HN58C1001 Series Timing Waveforms Read Timing Waveform Address CE OE High WE Data Out RES Rev.8.00, Nov. 27.2003, page ACC Data out valid DFR ...

Page 9

HN58C1001 Series Byte Write Timing Waveform (1) (WE Controlled) Address Din High-Z Busy RDY/ t RES RES V CC Rev.8.00, Nov. 27.2003, page ...

Page 10

HN58C1001 Series Byte Write Timing Waveform (2) (CE Controlled) Address Din High-Z Busy RDY/ t RES RES V CC Rev.8.00, Nov. 27.2003, page ...

Page 11

HN58C1001 Series Page Write Timing Waveform (1) (WE Controlled) *6 Address A0 to A16 OES Din t DB Busy High-Z ...

Page 12

HN58C1001 Series Page Write Timing Waveform (2) (CE Controlled) *6 Address A0 to A16 OES Din t DB Busy High-Z ...

Page 13

HN58C1001 Series Data Polling Timing Waveform Address OEH Din X I/O7 Rev.8.00, Nov. 27.2003, page Dout OES t DW Dout X ...

Page 14

HN58C1001 Series Toggle bit This device provide another function to determine the internal programming cycle. If the EEPROM is set to read mode during the internal programming cycle, I/O6 will charge from “1” to “0” (toggling) for each read. When ...

Page 15

HN58C1001 Series Software Data Protection Timing Waveform (1) (in protection mode Address 5555 Data AA Software Data Protection Timing Waveform (2) (in non-protection mode Address 5555 AAAA or 2AAA Data AA 55 ...

Page 16

HN58C1001 Series Functional Description Automatic Page Write Page-mode write feature allows 1 to 128 bytes of data to be written into the EEPROM in a single write cycle. Following the initial byte cycle, an additional 1 to 127 bytes can ...

Page 17

HN58C1001 Series Write/Erase Endurance and Data Retention Time 4 The endurance is 10 cycles in case of the page programming and 10 (1 cumulative failure rate). The data retention time is more than 10 years when a device is page- ...

Page 18

HN58C1001 Series 2. Data Protection at V On/Off CC When V is turned on or off, noise on the control pins generated by external circuits (CPU, etc) may act trigger and turn the EEPROM to program mode ...

Page 19

HN58C1001 Series 3. Software data protection To prevent unintentional programming, this device has the software data protection (SDP) mode. The SDP is enabled by inputting the following 3 bytes code and write data. SDP is not enabled if only the ...

Page 20

HN58C1001 Series Package Dimensions HN58C1001FP Series (FP-32D, FP-32DV) 20.45 20.95 Max 32 1 1.00 Max 1.27 *0.40 ± 0.08 0.15 0.38 ± 0.06 *Dimension including the plating thickness Base material dimension Rev.8.00, Nov. 27.2003, page ...

Page 21

... HN58C1001 Series Package Dimensions (cont.) HN58C1001T Series (TFP-32DA, TFP-32DAV) 8.00 8.20 Max 0.50 *0.22 ± 0.08 0.08 0.20 ± 0.06 0.45 Max 0.10 *Dimension including the plating thickness Base material dimension Rev.8.00, Nov. 27.2003, page 14.00 ± 0.20 Package Code JEDEC JEITA Mass (reference value) Unit: mm 0.80 0 ˚ – 5 ˚ ...

Page 22

Revision History Rev. Date Contents of Modification Page Description 0.0 Jul. 11. 1991 Initial issue 1.0 Jan. 10. 1992 Recommended DC Operating Conditions Addition Characteristics Characteristics Change of Test Conditions ...

Page 23

... Addition of CPU Reset timing waveform Data protection 3: Addition of note 7.0 Oct. 31. 1997 8 Timing Waveforms Read Timing Waveforms: Correct error 8.00 Nov. 27. 2003 Change format issued by Renesas Technology Corp. 2 Ordering Information Deletion of HN58C1001P-15 Addition of HN58C1001FP-15E, HN58C1001T-15E 20-21 Package Dimensions Deletion of DP-32 FP-32D to FP-32D, FP-32DV TFP-32DA to TFP-32DA, TFP-32DAV Addition of note.3, 4 ...

Page 24

Sales Strategic Planning Div. Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble ...

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