2sb1234 Sanyo Semiconductor Corporation, 2sb1234 Datasheet

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2sb1234

Manufacturer Part Number
2sb1234
Description
Pnp / Npn Epitaxial Planar Silicon Transistors
Manufacturer
Sanyo Semiconductor Corporation
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2sb1234-TB-E
Manufacturer:
SANYO/三洋
Quantity:
20 000
Ordering number : EN2553B
2SB1234 / 2SD1851
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking 2SB1234: PL
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
AF amplifier, solenoid drivers, LED drivers.
Darlington connection.
High DC current gain.
Ultrasmall-sized package permitting sets to be made smaller and slimer.
2SD1851: XY
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
( ) : 2SB1234
82506HA MS IM TC-00000087 / D1003TN (KT) / 92098HA (KT) / D138MO / 4167TA, TS
V (BR)CBO
V (BR)CEO
V (BR)EBO
V CE (sat)
V BE (sat)
Symbol
Symbol
V CBO
V CEO
V EBO
I CBO
I EBO
h FE 1
h FE 2
Tstg
I CP
P C
I C
Tj
SANYO Semiconductors
2SB1234 / 2SD1851
V CB =(--)60V, I E =0A
V EB =(--)8V, I C =0A
V CE =(--)2V, I C =(--)10mA
V CE =(--)2V, I C =(- -)100mA
I C =(--)100mA, I B =(--)100 A
I C =(--)100mA, I B =(--)100 A
I C =(--)10 A, I E =0A
I C =(--)1mA, R BE =
I E =(--)10 A, I C =0A
PNP / NPN Epitaxial Planar Silicon Transistors
Driver Applications
Conditions
Conditions
DATA SHEET
(3000)4000
min
5000
(- -)80
(- -)50
(- -)10
Ratings
typ
(--)0.9
(--)1.5
Ratings
--55 to +150
max
(- -)200
(- -)400
(--)100
(--)100
(--)1.5
(--)2.0
(--)80
(--)50
(--)10
200
150
No.2553-1/4
Unit
mW
Unit
mA
mA
nA
nA
V
V
V
V
V
V
V
V
C
C

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2sb1234 Summary of contents

Page 1

... Darlington connection. • High DC current gain. • Ultrasmall-sized package permitting sets to be made smaller and slimer. • Specifications ( ) : 2SB1234 Absolute Maximum Ratings at Ta=25 C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation ...

Page 2

... Collector-to-Emitter Voltage 240 -- 200 -- 160 -- 120 -- 0.6 0.8 1.0 1.2 Base-to-Emitter Voltage 2SB1234 / 2SD1851 Collector Base 100 2SB1234 ITR09423 240 2SB1234 --2V 200 160 120 1.4 1.6 1.8 ITR09425 Emitter 2SD1851 ...

Page 3

... Collector Current (sat 1 Collector Current 240 2SB1234 / 2SD1851 200 160 120 100 Ambient Temperature 2SB1234 / 2SD1851 100000 2SB1234 -- 10000 ...

Page 4

... SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2006. Specifications and information herein are subject to change without notice. 2SB1234 / 2SD1851 PS No.2553-4/4 ...

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