2sb1462j Panasonic Corporation of North America, 2sb1462j Datasheet
2sb1462j
Manufacturer Part Number
2sb1462j
Description
For General Amplification
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SB1462J.pdf
(3 pages)
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Transistors
2SB1462J
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD2216J
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: June 2007
• High forward current transfer ratio h
• SS-Mini type package, allowing downsizing of the equipment and
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
automatic insertion through the tape packing
Parameter
Parameter
This product complies with the RoHS Directive (EU 2002/95/EC).
* 1
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
FE
T
V
I
P
CBO
I
T
V
V
V
CEO
EBO
a
CP
I
I
stg
C
CE(sat)
C
C
h
CBO
j
CEO
f
CBO
CEO
EBO
= 25°C
FE
T
ob
−55 to +125
Rating
I
I
I
V
V
V
I
V
V
−100
−200
C
C
E
C
−60
−50
125
125
CB
CE
CE
CB
CB
−7
= −10 µA, I
= −100 µA, I
= −10 µA, I
= −100 mA, I
SJC00087CED
= −10 V, I
= −10 V, I
= −10 V, I
= −20 V, I
= −10 V, I
Conditions
Unit
mW
mA
mA
°C
°C
C
E
E
V
V
V
E
C
E
E
B
= 0
= 0
B
= 1 mA, f = 200 MHz
= 0
= −2 mA
= 0
= 0, f = 1 MHz
= 0
= −10 mA
Marking Symbol: A
0.27
±0.02
5˚
(0.50)(0.50)
1.60
1.00
3
1
Min
−60
−50
160
−7
+0.05
–0.03
±0.05
2
− 0.3
Typ
2.7
80
SSMini3-F1 Package
− 0.1
−100
− 0.5
Max
460
0.12
EIAJ: SC-89
+0.03
–0.01
1: Base
2: Emitter
3: Collector
Unit: mm
MHz
Unit
µA
µA
pF
V
V
V
V
1
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2sb1462j Summary of contents
Page 1
... This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1462J Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216J ■ Features • High forward current transfer ratio h • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing ■ ...
Page 2
... This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1462J 150 125 100 100 120 140 160 ( °C ) Ambient temperature T a −120 = − 25°C −100 −80 = 75°C −25° −60 − ...
Page 3
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...