huf75329s3s ETC-unknow, huf75329s3s Datasheet

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huf75329s3s

Manufacturer Part Number
huf75329s3s
Description
49a, 55v, 0.024 Ohm, N-channel Ultrafet Power Mosfets
Manufacturer
ETC-unknow
Datasheet
©2001 Fairchild Semiconductor Corporation
49A, 55V, 0.024 Ohm, N-Channel UltraFET
Power MOSFETs
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75329.
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75329S3ST.
Packaging
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
HUF75329G3
HUF75329P3
HUF75329S3S
PART NUMBER
DRAIN
(TAB)
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
JEDEC STYLE TO-247
TO-247
TO-220AB
TO-263AB
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
PACKAGE
Data Sheet
For severe environments, see our Automotive HUFA series.
SOURCE
75329G
75329P
75329S
DRAIN
SOURCE
BRAND
GATE
GATE
HUF75329G3, HUF75329P3, HUF75329S3S
JEDEC TO-263AB
Features
• 49A, 55V
• Ultra Low On-Resistance, r
• Temperature Compensating PSPICE® and SABER™
• Thermal Impedance PSPICE and SABER Models
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
Symbol
Models
- Available on the web at: www.fairchildsemi.com
- TB334, “Guidelines for Soldering Surface Mount
(FLANGE)
Components to PC Boards”
DRAIN
December 2001
(FLANGE)
DRAIN
JEDEC TO-220AB
G
HUF75329G3, HUF75329P3, HUF75329S3S Rev. B
DS(ON)
D
S
= 0.024
SOURCE
DRAIN
GATE

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huf75329s3s Summary of contents

Page 1

... TO-247 HUF75329P3 TO-220AB HUF75329S3S TO-263AB NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUF75329S3ST. Packaging JEDEC STYLE TO-247 DRAIN (TAB) Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html For severe environments, see our Automotive HUFA series. ...

Page 2

... TYP 150 0.020 - - - - - - - - - 30V 49A 0. 1.0mA - 2.0 g(REF HUF75329G3, HUF75329P3, HUF75329S3S Rev. B UNITS MAX UNITS - 250 A 100 0.024 o 1. C/W 105 100 ...

Page 3

... T , CASE TEMPERATURE ( C CASE TEMPERATURE P DM NOTES: DUTY FACTOR PEAK HUF75329G3, HUF75329P3, HUF75329S3S Rev. B MAX UNITS - MAX UNITS 1. 120 nC 150 175 ...

Page 4

... STARTING T o STARTING T = 150 C J 0.001 0.01 0 TIME IN AVALANCHE (ms) AV PULSE TEST PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 1.5 3.0 4 GATE TO SOURCE VOLTAGE (V) GS FIGURE 8. TRANSFER CHARACTERISTICS HUF75329G3, HUF75329P3, HUF75329S3S Rev + - 175 15V DD 6.0 7.5 ...

Page 5

... ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE ( 49A 36.75A 24. 12.25A HUF75329G3, HUF75329P3, HUF75329S3S Rev 250 120 160 200 0V 1MHz = ISS RSS OSS ...

Page 6

... AV FIGURE 15. UNCLAMPED ENERGY WAVEFORMS Q g(TOT g(10 10V g(TH FIGURE 17. GATE CHARGE WAVEFORM d(ON 90% 10% 50% PULSE WIDTH FIGURE 19. RESISTIVE SWITCHING WAVEFORMS HUF75329G3, HUF75329P3, HUF75329S3S Rev 20V GS t OFF d(OFF 90% 10% 90% 50% ...

Page 7

... S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 DBREAK ESLC DBODY RDRAIN 18 EBREAK - 16 21 MWEAK MMED MSTRO LSOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES HUF75329G3, HUF75329P3, HUF75329S3S Rev. B DRAIN 2 SOURCE 3 ...

Page 8

... EGS RSLC1 RDBREAK 51 72 ISCL DBREAK 50 71 RDRAIN MWEAK 8 EBREAK MMED + MSTRO CIN 8 7 RSOURCE RLSOURCE RBREAK RVTEMP EDS + RVTHRES HUF75329G3, HUF75329P3, HUF75329S3S Rev. B LDRAIN DRAIN 2 RLDRAIN RDBODY DBODY LSOURCE SOURCE 3 VBAT ...

Page 9

... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE HUF75329G3, HUF75329P3, HUF75329S3S Rev. B ...

Page 10

TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ DOME™ ...

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