lx1214e500x NXP Semiconductors, lx1214e500x Datasheet

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lx1214e500x

Manufacturer Part Number
lx1214e500x
Description
Npn Microwave Power Transistor
Manufacturer
NXP Semiconductors
Datasheet
Preliminary specification
Supersedes data of December 1994
File under Discrete Semiconductors, SC15
DATA SHEET
LX1214E500X
NPN microwave power transistor
DISCRETE SEMICONDUCTORS
1997 Feb 18

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lx1214e500x Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET LX1214E500X NPN microwave power transistor Preliminary specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 ...

Page 2

... Figs 6 (CW) PINNING - SOT439A PIN 1 collector 2 base 3 emitter connected to flange 1 handbook, 4 columns 3 2 Top view Fig.1 Simplified outline and symbol. WARNING 2 Preliminary specification LX1214E500X = common emitter class AB (A) (W) (dB) (%) and 7 DESCRIPTION ...

Page 3

... GHz note 1 MLC436 80 handbook, halfpage P tot ( ( Preliminary specification LX1214E500X MIN. MAX class +200 200 235 MLC437 0 50 100 150 Fig.3 Power derating curve. ...

Page 4

... 150 mA 4 common-emitter class AB amplifier (V) (A) (W) 24 0.15 typ Preliminary specification LX1214E500X CONDITIONS MAX 100 C 1.3 j note 1 0.2 MIN. MAX. 4 220 100 (dB) (%) typ ...

Page 5

... C1 The test circuit is split into two independent halves each being 30 Dimensions in mm. Substrate: Epsilam 10. Thickness: 0.635 mm. Permittivity: = 10. r 1997 Feb 18 30 4.0 4.5 2.5 5.0 5.0 3.0 11.0 10.5 3.0 5.0 5.0 7 size. Fig.4 Test circuit. 5 Preliminary specification LX1214E500X 30 8.0 8.0 1.0 5.0 40 0.7 4 output C2 MLC470 ...

Page 6

... BIAS CIRCUIT R1 TR1 Fig.5 Class AB bias circuit. VALUE 100 pF 1500 >30 V 4.7 k 100 , Preliminary specification LX1214E500X CIRCUIT DUT MLC727 ORDERING INFORMATION ATC 100A1201kp Erie1250-003 Philips tube, 12NC = 4330 030 43081 4.2 2.2 3.2 mm (4B1) ...

Page 7

... A; typical values (GHz) 1.2 1.3 1.4 handbook, full pagewidth 0 – Fig.6 Input impedance as a function of frequency; typical values at P 1997 Feb 1.8 + j2.6 4.0 + j2.1 3.2 + j1.0 1 0.5 1.2 GHz 1 0.2 0.5 2 1.4 0 Preliminary specification LX1214E500X 4.0 j2.2 3.8 j0.5 3.2 j0 MLC445 = ...

Page 8

... Philips Semiconductors NPN microwave power transistor handbook, full pagewidth 0 – Fig.7 Optimum load impedance as a function of frequency; typical values at P 1997 Feb 18 1 0.5 0.2 0.5 2 1.4 GHz 1 Preliminary specification LX1214E500X MLC446 = ...

Page 9

... NPN microwave power transistor PACKAGE OUTLINE handbook, full pagewidth 0.15 max 3.3 2.9 3.3 Dimensions in mm. Torque on screws: max. 0.5 Nm. Recommended screw: M3. Recommended pitch for mounting screws: 19 mm. 1997 Feb 18 12.85 max 3 23 max seating plane 3.7 max 1 2 8.25 16.5 Fig.8 SOT439A. 9 Preliminary specification LX1214E500X 6 max 1.6 max 2.7 min 9.85 10.3 max 10.0 2.7 min MBC881 ...

Page 10

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Feb 18 10 Preliminary specification LX1214E500X ...

Page 11

... Philips Semiconductors NPN microwave power transistor 1997 Feb 18 NOTES 11 Preliminary specification LX1214E500X ...

Page 12

Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. + ...

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