m28256 STMicroelectronics, m28256 Datasheet

no-image

m28256

Manufacturer Part Number
m28256
Description
256 Kbit 32kb X8 Parallel Eeprom With Software Data Protection
Manufacturer
STMicroelectronics
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M28256
Manufacturer:
ST
0
Part Number:
m28256-121
Manufacturer:
ST
0
Part Number:
m28256-126
Manufacturer:
ST
0
Part Number:
m28256-126/PLCC
Manufacturer:
ST
0
Part Number:
m28256-12W6
Manufacturer:
ST
0
Part Number:
m28256-15W6
Manufacturer:
ST
Quantity:
51
Part Number:
m28256-15W6
Quantity:
120
DESCRIPTION
The M28256 and M28256-Ware 32K x8 low power
Parallel EEPROM fabricatedwith STMicroelectron-
ics proprietary double polysilicon CMOS technol-
ogy.
Table 1. Signal Names
January 1999
This is preliminary information on a new product now in developmentor undergoing evaluation . Detail s are subject to change without notice.
A0-A14
DQ0-DQ7
W
E
G
V
V
– 90ns at 5V
– 120ns at 3V
– 5V
– 2.7V to 3.6V for M28256-xxW
– 64 Bytes Page Write Operation
– Byte or Page Write Cycle
– Data Polling
– Toggle Bit
CMOS TECHNOLOGY:
– Endurance >100,000 Erase/Write Cycles
– Data Retention >10 Years
FAST ACCESS TIME:
SINGLE SUPPLY VOLTAGE:
LOW POWER CONSUMPTION
FAST WRITE CYCLE:
ENHANCED END of WRITE DETECTION:
STATUS REGISTER
HIGH RELIABILITY DOUBLE POLYSILICON,
JEDEC APPROVED BYTEWIDE PIN OUT
ADDRESS and DATA LATCHED ON-CHIP
SOFTWARE DATA PROTECTION
CC
SS
10% for M28256
Address Input
Data Input / Output
Write Enable
Chip Enable
Output Enable
Supply Voltage
Ground
256 Kbit (32Kb x8) Parallel EEPROM
Figure 1. Logic Diagram
with Software Data Protection
28
A0-A14
PDIP28 (BS)
28
SO28 (MS)
1
W
300 mils
G
E
1
15
V CC
V SS
M28256
TSOP28 (NS)
PRELIMINARY DATA
PLCC32 (KA)
8 x13.4mm
M28256
8
DQ0-DQ7
AI01885
1/21

Related parts for m28256

m28256 Summary of contents

Page 1

... Endurance >100,000 Erase/Write Cycles – Data Retention >10 Years JEDEC APPROVED BYTEWIDE PIN OUT ADDRESS and DATA LATCHED ON-CHIP SOFTWARE DATA PROTECTION DESCRIPTION The M28256 and M28256-Ware 32K x8 low power Parallel EEPROM fabricatedwith STMicroelectron- ics proprietary double polysilicon CMOS technol- ogy. Table 1. Signal Names A0-A14 ...

Page 2

... G 22 A11 W A9 A13 A13 W A11 A14 1 A10 E A12 A7 DQ7 A6 DQ6 A5 DQ5 DQ4 DQ3 A11 NC M28256 25 G A10 E DQ7 DQ6 17 AI01887 21 A10 E DQ7 DQ6 DQ5 DQ4 15 DQ3 M28256 DQ2 DQ1 DQ0 AI01889 ...

Page 3

... A6-A14 LATCH (Page Address) ADDRESS A0-A5 LATCH Y DECODE (1) Parameter (2) ( RESET CONTROL LOGIC 256K ARRAY SENSE AND DATA LATCH I/O BUFFERS DQ0-DQ7 M28256 Value Unit – – 150 C – 0.3 to 6.5 V – – 0.3 to 6.5 V 4000 V W PAGE LOAD ...

Page 4

... M28256 (1) Table 3. Operating Modes Mode Read Write Standby / Write Inhibit Write Inhibit Write Inhibit Output Disable Notes IL. DESCRIPTION (Cont’d) The devices offer fast access time with low power dissipation and requires power supply. The circuit has been designed to offer a flexible ...

Page 5

... SDP continues to be set. An extension to this is where SDP is required set, and data written. Using the same sequence as above, the data can be written and SDP is set at the same time, giving both these actions in the same Write cycle (t M28256 ). WC 5/21 ...

Page 6

... M28256 Figure 5. Software Data Protection Enable Algorithm and Memory Write WRITE AAh in Address 5555h Page WRITE 55h in Write Address 2AAAh Instruction WRITE A0h in Address 5555h SDP is set SDP ENABLE ALGORITHM Figure 6. Software Data Protection Disable Algorithm Page Write Instruction 6/21 SDP SDP ...

Page 7

... Table 5. Capacitance ( MHz ) A Symbol Parameter C Input Capacitance IN C Output Capacitance OUT Note: 1. Sampled only, not 100% tested. Table 6. Read Mode DC Characteristics for M28256 ( – Symbol Parameter I Input Leakage Current LI I Output Leakage Current LO ...

Page 8

... Symbol t Time Delay to Read Operation PUR t Time Delay to Write Operation (once V PUW V Write Inhibit Threshold WI Note: 1. Sampled only, not 100% tested. Table 8. Read Mode DC Characteristics for M28256 – Symbol Parameter I Input Leakage Current LI I Output Leakage Current ...

Page 9

... 120 150 120 150 M28256 M28256 Unit -15 -20 150 200 ns 150 200 Unit -20 -25 200 250 ns ...

Page 10

... Data Valid before Chip Enable High DVEH DS Note: 1. Characterized only but not tested in production. 10/21 = 4.5V to 5.5V) Parameter Test Condition Note 1 M28256 Unit Min Max ...

Page 11

... DVEH DS Note: 1. Characterized only but not tested in production. = 2.7V to 3.6V) Parameter Test Condition Note 1 M28256 M28256-W Unit Min Max ...

Page 12

... M28256 Figure 9. Read Mode AC Waveforms A0-A14 E G DQ0-DQ7 Note: Write Enable (W) = High. Figure 10. Write Mode AC Waveforms - Write Enable Controlled A0-A14 VALID tAVWL E tELWL G tGHWL W DQ0-DQ7 12/21 VALID tAVQV tGLQV tELQV DATA OUT tWLAX tWLWH tWLDV DATA IN tDVWH tAXQX tEHQZ tGHQZ Hi-Z AI01700 tWHEH ...

Page 13

... E tGHEL G tWLEL W DQ0-DQ7 Figure 12. Page Write Mode AC Waveforms - Write Enable Controlled A0-A14 Addr tWHWL W tWLWH DQ0-DQ7 Byte 0 DQ5 tELAX tELEH tELDV DATA IN tDVEH Addr 1 Addr 2 Addr n tWHWH Byte 1 Byte 2 Byte n Byte n M28256 tEHGL tEHWH tEHDX AI01702 tWHRH tWHWH AI01703B 13/21 ...

Page 14

... M28256 Figure 13. Software Protected Write Cycle Waveforms G E tWLWH W tAVEL A0-A5 A6-A14 5555h tDVWH DQ0-DQ7 Note: A6 through A14 must specify the same page address during each high to low transition of W (or E) after the software code has been entered. G must be high only when W and E are both low. ...

Page 15

... Figure 15. Toggle Bit Waveform Sequence A0-A14 DQ6 LAST WRITE Note: 1. First Toggle bit is forced to ’0’. (1) DQ6 TOGGLE INTERNAL WRITE SEQUENCE M28256 DQ6 READY AI01706 15/21 ...

Page 16

... M28256 ORDERING INFORMATION SCHEME Example: M28256 – 15 Speed Operating Voltage (1) 90 90ns blank 4.5V to 5.5V 12 120ns W 2.7V to 3.6V 15 150ns 20 200ns (2) 25 250ns Notes: 1. Not available for ”W” operating voltage. 2. Available for ”W” operating voltage only. 3. Temperature Range on request only. Devices are shipped from the factory with the memory content set at all ”1’s” (FFh). ...

Page 17

... M28256 inches Min Max – 0.200 0.015 – 0.140 0.160 0.015 0.020 – – 0.008 0.012 1.450 1.470 – – – – 0.535 0.545 – – ...

Page 18

... M28256 PLCC32 - 32 lead Plastic Leaded Chip Carrier, rectangular Symb Typ A 2. 0.33 B1 0.66 D 12.32 D1 11.35 D2 9.91 E 14.86 E1 13.89 E2 12.45 e 1.27 F 0. PLCC Drawing is not to scale. 18/21 mm Min Max Typ 3.56 2.41 – 0.38 0.53 0.81 12.57 11.56 10.92 15.11 14.10 13.46 – – 0.050 0.25 – – 0.035 0.51 (.020) 1.14 (.045) R inches ...

Page 19

... L 0. SO-b Drawing is not to scale. mm Min Max Typ 2.64 0.29 0.48 0.32 18.06 7.59 – – 0.050 10. M28256 inches Min Max 0.097 0.104 0.005 0.011 0.014 0.019 0.009 0.013 0.701 0.711 0.292 0.299 – – 0.400 0.410 0.024 0.040 0.004 C L 19/21 ...

Page 20

... M28256 TSOP28 - 28 lead Plastic Thin Small Outline 13.4mm Symb Typ 0.95 B 0.17 C 0.10 D 13.20 D1 11.70 E 7.90 e 0. DIE TSOP-c Drawing is not to scale. 20/21 mm Min Max Typ 1.25 0.20 1.15 0.27 0.21 13.60 11.90 8. 0.022 0. 0. inches Min Max 0.049 0.008 0.037 0.045 0.007 ...

Page 21

... The ST logo is a registered trademark of STMicroelectronics STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 1999 STMicroelectronics - All Rights Reserved http://www.st.com M28256 21/21 ...

Related keywords