m36p0r9070e0zace Numonyx, m36p0r9070e0zace Datasheet

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m36p0r9070e0zace

Manufacturer Part Number
m36p0r9070e0zace
Description
512 Mbit X16, Multiple Bank, Multi-level, Burst Flash Memory 128 Mbit Burst Psram, 1.8v Supply, Multi-chip Package
Manufacturer
Numonyx
Datasheet
Feature summary
Flash memory
November 2007
Multi-Chip Package
– 1 die of 512 Mbit (32Mb x 16, Multiple
– 1 die of 128Mbit (8Mb x16) PSRAM
Supply voltage
– V
– V
Electronic signature
– Manufacturer Code: 20h
– Device Code: 8819
ECOPACK® package available
Synchronous / Asynchronous Read
– Synchronous Burst Read mode:
– Asynchronous Page Read mode
– Random Access: 96ns
Programming time
– 4.2µs typical Word program time using
Memory organization
– Multiple bank memory array: 64 Mbit banks
– Four Extended Flash Array (EFA) Blocks of
Dual operations
– program/erase in one Bank while read in
– No delay between read and write
Security
– 2112-bit user programmable OTP Cells
– 64-bit unique device number
100,000 program/erase cycles per block
Common Flash Interface (CFI)
Bank, Multi-Level, Burst) Flash Memory
108MHz, 66MHz
Buffer Enhanced Factory Program
command
64 Kbits
others
operations
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory
DDF
PPF
= 9V for fast program
= V
128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
CCP
= V
DDQ
= 1.7 to 1.95V
Rev 3
PSRAM
Block locking
– All Blocks locked at power-up
– Any combination of Blocks can be locked
– WP
– Absolute Write Protection with V
Access time: 70ns
User-selectable operating modes
– Asynchronous modes: Random Read, and
– Synchronous modes: NOR-Flash, Full
Asynchronous Page Read
– Page Size: 4, 8 or 16 Words
– Subsequent Read Within Page: 20ns
Burst Read
– Fixed Length (4, 8, 16 or 32 Words) or
– Maximum Clock Frequency: 80MHz
Low Power Consumption
– Active Current: < 25mA
– Standby Current: 200µA
– Deep Power-Down Current: 10µA
Low Power Features
– Partial Array Self Refresh (PASR)
– Deep Power-Down (DPD) Mode
with zero latency
Write, Page Read
Synchronous (Burst Read and Write)
Continuous
F
for Block Lock-Down
TFBGA107 (ZAC)
M36P0R9070E0
FBGA
www.numonyx.com
PPF
= V
1/23
SS
1

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m36p0r9070e0zace Summary of contents

Page 1

... Maximum Clock Frequency: 80MHz ■ Low Power Consumption – Active Current: < 25mA – Standby Current: 200µA – Deep Power-Down Current: 10µA ■ Low Power Features – Partial Array Self Refresh (PASR) – Deep Power-Down (DPD) Mode Rev PPF SS 1/23 www.numonyx.com 1 ...

Page 2

Contents Contents 1 Summary description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

M36P0R9070E0 6 Package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 4

List of tables List of tables Table 1. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 5

M36P0R9070E0 List of figures Figure 1. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 6

... It should be read in conjunction with the M58PRxxxJ and M69KB128AB datasheets, where all specifications required to operate the Flash memory and PSRAM components are fully detailed. The M58PR512J and M69KB128AB datasheets are available from www.numonyx.com. Recommended operating conditions do not allow more than one memory to be active at the same time. ...

Page 7

M36P0R9070E0 Table 1. Signal names (1) A0-A24 DQ0-DQ15 V DDQ V PPF V DDF V CCP WAIT NC DU Flash Memory DPD F PSRAM E P ...

Page 8

Summary description Figure 2. TFBGA connections (top view through package DDQ 8/23 2 ...

Page 9

... Flash memory. 2.4 Clock (K) The Clock input pin is common to the Flash memory and PSRAM components. For details of how the Clock signal behaves, please refer to the datasheets of the respective memory components: M69KB128AB for the PSRAM and M58PR512J for the Flash memory. and Table 1., Signal ...

Page 10

Signal descriptions 2.5 Wait (WAIT) WAIT is an output pin common to the Flash memory and PSRAM components. However the WAIT signal does not behave in the same way for the PSRAM and the Flash memory. For details of how ...

Page 11

M36P0R9070E0 2.10 Flash Reset (RP The Reset input provides a hardware reset of the Flash memories. When Reset memory is in Reset mode: the outputs are high impedance and the current consumption is reduced to the Reset ...

Page 12

Signal descriptions 2.17 Deep Power-Down input (DPD The Deep Power-Down input is used to place the device in a Deep Power-Down mode.When the device is in Deep Power-Down mode, the memory cannot be modified and data is protected. For further ...

Page 13

M36P0R9070E0 2.22 V Ground the common ground reference for all voltage measurements in the Flash (core and SS I/O Buffers) and PSRAM chips. It must be connected to the system ground. Note: Each Flash memory device in ...

Page 14

Functional description 3 Functional description The PSRAM and Flash memory components have separate power supplies but share the same grounds. They are distinguished by two Chip Enable inputs: E the PSRAM. Recommended operating conditions do not allow more than one ...

Page 15

M36P0R9070E0 Table 2. Main operating modes Operation Bus Read Bus Write Address Latch Output Disable V V ...

Page 16

... These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the Numonyx SURE Program and other relevant quality documents. Table 3. ...

Page 17

M36P0R9070E0 5 DC and AC parameters This section summarizes the operating measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and AC characteristics Tables that follow, are derived from tests performed under the ...

Page 18

... DC and AC parameters Figure 5. AC measurement load circuit Table 5. Capacitance Symbol OUT 1. Sampled only, not 100% tested. Please refer to the M58PRxxxJ and M69KB128AB datasheets for further DC and AC characteristic values and illustrations. 18/23 DEVICE UNDER TEST Z 0 (1) Parameter Test Condition Input Capacitance V IN ...

Page 19

... M36P0R9070E0 6 Package mechanical In order to meet environmental requirements, Numonyx offers these devices in ECOPACK® packages. These packages have a Lead-free second-level interconnect. The category of Second-Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ...

Page 20

Package mechanical Table 6. Stacked TFBGA107 8 × 11mm - 9 × 12 active ball array, 0.8mm pitch, package mechanical data Symbol ddd 20/23 millimeters Typ Min Max ...

Page 21

... Note: Devices are shipped from the factory with the memory content bits erased to ’1’. For a list of available options (Speed, Package, etc.) or for further information on any aspect of this device, please contact the Numonyx Sales Office nearest to you. M36 P = 1.7 to 1.95V DDQ ...

Page 22

... Figure 2: TFBGA connections (top view through package). T min and V STG maximum ratings. Table 2: Main operating modes PSRAM value for Input Rise and Fall Times filled in in Operating and AC measurement 3 Applied Numonyx branding. M36P0R9070E0 Changes max modified in Table 3: Absolute PP modified. Table 4: conditions. ...

Page 23

... NUMONYX PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. Numonyx products are not intended for use in medical, life saving, life sustaining, critical control or safety systems nuclear facility Numonyx may make changes to specifications and product descriptions at any time, without notice. ...

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