a3l90ddxx AEGIS SEMICONDUTORES LTDA, a3l90ddxx Datasheet

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a3l90ddxx

Manufacturer Part Number
a3l90ddxx
Description
Thyristors
Manufacturer
AEGIS SEMICONDUTORES LTDA
Datasheet
T
T
I
I
I
current
I
I
F Mounting Force
MAXIMUM ALLOWABLE RATINGS
F(AV)
F(RMS)
FSM
2
2
J
stg
t Max. I
t
1/2
Junction Temperature
Storage Temperature
Max. Peak non-rep. surge
Max. I
Nom. RMS current
2
PARAMETER
SEMICONDUTORES LTDA.
t capability
2
t
1/2
Max. Av. current
@ Max. T
capability
VOLTAGE RATINGS
A3L:90DD.02
A3L:90DD.04
A3L:90DD.06
A3L:90DD.08
A3L:90DD.10
A3L:90DD.12
A3L:90DD.14
A3L:90DD.16
Part Number
C
V
Max. rep. peak reverse voltage
-40 to 150
-40 to 150
T
RRM
VALUE
J
20.43
18.65
14.45
13.19
204.3
2020
2110
1700
1780
= 0 to 150 C
141
90
85
5
, V
1000
1200
1400
1600
200
400
600
800
R
A3L:90DD.XX
(V)
O
T
J
UNITS
kA
kA
= -40 to 0 C
N.m
O
O
O
A
A
A
2
C
C
C
1000
1200
1400
1520
s
2
200
400
600
800
s
1/2
180 half sine wave
50 Hz half cycle sine wave
60 Hz half cycle sine wave
50 Hz half cycle sine wave
60 Hz half cycle sine wave
t = 10ms
t = 8.3 ms
t = 10ms
t = 8.3 ms
Initial T
I
O
2
t for time t
O
V
peak reverse voltage
RSM
J
= 150 C, no voltage applied after surge.
, V
x
R
= I
T
O
(V)
J
2
t
= 25 to 150 C
1/2
1100
1300
1500
1700
* t
300
500
700
900
Max. non-rep.
x
1/2
. (0.1 < tx < 10ms).
NOTES
O
-
-
-
-
Initial T
applied after surge.
Initial T
applied after surge.
Initial T
applied after surge.
Initial T
applied after surge.
J
J
J
J
= 150 C, rated V
= 150 C, no voltage
= 150 C, rated V
= 150 C, no voltage
O
O
O
O
RRM
RRM

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a3l90ddxx Summary of contents

Page 1

SEMICONDUTORES LTDA. VOLTAGE RATINGS V Max. rep. peak reverse voltage Part Number A3L:90DD.02 A3L:90DD.04 A3L:90DD.06 A3L:90DD.08 A3L:90DD.10 A3L:90DD.12 A3L:90DD.14 A3L:90DD.16 MAXIMUM ALLOWABLE RATINGS PARAMETER T Junction Temperature J T Storage Temperature stg Max. Av. current I F(AV) @ Max. T ...

Page 2

SEMICONDUTORES LTDA. CHARACTERISTICS PARAMETER V Peak forward voltage FM V Low-level threshold F(TO)1 V High-level threshold F(TO)2 r Low-level resistance F1 r High-level resistance F2 I Peak reverse current RM R Thermal resistance, thJC junction-to-case R Thermal resistance, thCS case-to-sink ...

Page 3

SEMICONDUTORES LTDA. Maximum Average Forward Power Loss 500 400 300 200 100 *Sinusoidal Waveform Average Forward Current (A) Fig.3 -Forward Power Loss Characteristics Forward Voltage Drop 1000 100 125ºC 25ºC 10 0.5 1.0 1.5 Instantaneous Forward ...

Page 4

AEGIS SEMICONDUTORES LTDA. TO-240AA Fig Outline Characteristics A3L:90DD.XX ~1 Fig Circuit Layout ~3 ~2 ...

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