sp000088490 Infineon Technologies Corporation, sp000088490 Datasheet
sp000088490
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sp000088490 Summary of contents
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... Avalanche energy, repetitive t Avalanche current, repetitive t MOSFET dv /dt ruggedness Gate source voltage Power dissipation Operating and storage temperature Rev. 2.0 Product Summary DS(on),max Q g,typ 1) for target applications Ordering Code SP000088490 Symbol Conditions I T =25 ° =100 ° =25 °C D,pulse ...
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Maximum ratings =25 °C, unless otherwise specified j Parameter Continuous diode forward current 2) Diode pulse current 4) Reverse diode dv /dt Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, reflowsoldering ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Effective output capacitance, energy 6) related Effective output capacitance, time 7) related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge ...
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Power dissipation P =f(T ) tot C 300 200 100 Max. transient thermal impedance Z =f(t ) thJC P parameter: D 0.5 0 0.1 0.05 0.02 0.01 single ...
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Typ. output characteristics I =f =150 ° parameter Drain-source on-state resistance =10 V DS(on) j ...
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Typ. gate charge V =f =18 A pulsed GS gate D parameter gate 11 Avalanche energy =50 V ...
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Typ. capacitances C =f MHz Ciss 3 10 Coss Crss 100 200 V Rev. 2.0 14 Typ. Coss stored energy ...
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Definition of diode switching characteristics Rev. 2.0 page 8 IPB60R099CP 2006-06-19 ...
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PG-TO263-3-2/TO263-3-5/TO263-3-22: Outlines Dimensions in mm/inches Rev. 2.0 page 9 IPB60R099CP 2006-06-19 ...
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Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions o characteristics (“Beschaffenheitsgarantie”). With ...