std13003-1 STMicroelectronics, std13003-1 Datasheet

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std13003-1

Manufacturer Part Number
std13003-1
Description
High Voltage Fast-switching Npn Power Transistor
Manufacturer
STMicroelectronics
Datasheet

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Part Number:
STD13003-1
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APPLICATIONS:
DESCRIPTION
The device is manufactured using high voltage
Multi
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
September 2001
Symbol
REVERSE PINS OUT Vs STANDARD IPAK
(TO-251) / DPAK (TO-252) PACKAGES
MEDIUM VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL (Suffix
"T4")
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (Suffix "-1")
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
SWITCH MODE POWER SUPPLIES
V
V
V
T
P
I
I
CEO
CES
EBO
I
CM
T
I
BM
stg
C
B
tot
j
Epitaxial Planar
Collector-Emitter Voltage (V
Collector-Emitter Voltage (I
Emitter-Base Voltage
(I
Collector Current
Collector Peak Current (t
Base Current
Base Peak Current (t
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
®
C
= 0, I
B
= 0.75 A,
technology for high
Parameter
p
c
< 5 ms)
t
= 25
p
< 10 s, T
p
< 5 ms)
B
BE
o
C
= 0)
HIGH VOLTAGE FAST-SWITCHING
= 0)
j
< 150
o
C)
NPN POWER TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
(Suffix "-1")
TO-251
IPAK
-65 to 150
BV
Value
0.75
700
400
150
1.5
1.5
20
3
EBO
STD13003
(Suffix "T4")
TO-252
DPAK
Unit
o
o
W
V
V
V
A
A
A
A
C
C
1/8

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std13003-1 Summary of contents

Page 1

... HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR INTERNAL SCHEMATIC DIAGRAM = < < 150 < 5 ms) p < STD13003 IPAK DPAK TO-251 TO-252 (Suffix "-1") (Suffix "T4") Value 700 400 BV EBO 1.5 3 0.75 1.5 20 -65 to 150 150 Unit V V ...

Page 2

... STD13003 THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CEV Current (V = -1.5V Emitter-Base EBO Breakdown Voltage ( Collector-Emitter CEO(sus) Sustaining Voltage ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage h DC Current Gain ...

Page 3

... Safe Operating Areas DC Current Gain Collector Emitter Saturation Voltage Derating Curve DC Current Gain Base Emitter Saturation Voltage STD13003 3/8 ...

Page 4

... STD13003 Inductive Fall Time Reverse Biased SOA 4/8 Inductive Storage Time ...

Page 5

... Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor STD13003 5/8 ...

Page 6

... STD13003 TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A 2.20 A1 0.90 A3 0.70 B 0. 0.45 C2 0.48 D 6.00 E 6.40 G 4.40 H 15.90 L 9. 6/8 mm TYP. MAX. MIN. 2.40 0.087 1.10 0.035 1.30 0.028 0.90 0.025 5.40 0.204 0.85 0.30 0.95 0.60 0.018 0.60 0.019 6.20 0.237 6.60 0.252 4.60 0.173 16.30 0.626 9.40 0.354 1.20 0.031 0.80 1. inch TYP. MAX. 0.094 0.043 0.051 0.035 0.213 ...

Page 7

... B 0.64 B2 5.20 C 0.45 C2 0.48 D 6.00 E 6.40 G 4. MAX. MIN. 2.40 0.087 1.10 0.035 0.23 0.001 0.90 0.025 5.40 0.204 0.60 0.018 0.60 0.019 6.20 0.236 6.60 0.252 4.60 0.173 10.10 0.368 0.8 1.00 0.024 o 8 STD13003 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 0.031 0.039 P032P_B o 7/8 ...

Page 8

... STD13003 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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