znbg3010 Zetex Semiconductors plc., znbg3010 Datasheet

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znbg3010

Manufacturer Part Number
znbg3010
Description
Fet Bias Controller And Polarity Switch
Manufacturer
Zetex Semiconductors plc.
Datasheet

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FET BIAS CONTROLLER AND
POLARITY SWITCH
ISSUE 1 - FEBRUARY 1998
DEVICE DESCRIPTION
The ZNBG series of devices are designed to
meet the bias requirements of GaAs and
HEMT FETs commonly used in satellite
receiver LNBs, PMR cellular telephones etc.
with a minimum of external components.
With the addition of two capacitors and a
resistor, the devices provide drain voltage
and current control for three external
grounded source FETs, generating the
regulated negative rail required for FET gate
biasing whilst operating from a single supply.
This negative bias, at -3 volts, can also be
used to supply other external circuits.
The ZNBG3010/11 includes bias circuits to
drive up to three external FETs. A control
input to the device selects either one of two
FETs as operational,
p e r m a n e n t l y a ct i v e . T hi s f e a t u r e i s
particularly used as an LNB polarisation
switch.
Drain current setting of the ZNBG3010/11 is
user selectable over the range 0 to 15mA,
this is achieved with addition of a single
resistor. The series also offers the choice of
drain voltage to be set for the FETs, the
ZNBG3010 gives 2.2 volts drain whilst the
ZNBG3011 gives 2 volts.
FEATURES
Provides bias for GaAs and HEMT FETs
Drives up to three FETs
Dynamic FET protection
Drain current set by external resistor
Regulated negative rail generator
requires only 2 external capacitors
Choice in drain voltage
Wide supply voltage range
Polarisation switch for LNBs
QSOP surface mount package
the third FET is
4-114
These devices are unconditionally stable
over the full working temperature with the
FETs in place, subject to the inclusion of the
recommended gate and drain capacitors.
These ensure RF stability and minimal
injected noise.
It is possible to use less than the devices full
complement of FET bias controls, unused
drain and gate connections can be left open
circuit without affecting operation of the
remaining bias circuits.
In order to protect the external FETs the
circuits have been designed to ensure that,
under any conditions including power
up/down transients, the gate drive from the
bias circuits cannot exceed the range -3.5V
to 1V. Furthermore if the negative rail
experiences a fault condition, such as
overload or short circuit, the drain supply to
the FETs will shut down avoiding excessive
current flow.
The ZNBG3010/11 are available in QSOP16
for the minimum in device size. Device
operating temperature is -40 to 70°C to suit
a wide range of environmental conditions.
APPLICATIONS
Satellite receiver LNBs
Private mobile radio (PMR)
Cellular telephones
ZNBG3010
ZNBG3011

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znbg3010 Summary of contents

Page 1

... particularly used as an LNB polarisation switch. Drain current setting of the ZNBG3010/11 is user selectable over the range 0 to 15mA, this is achieved with addition of a single resistor. The series also offers the choice of drain voltage to be set for the FETs, the ZNBG3010 gives 2 ...

Page 2

... ZNBG3010 ZNBG3011 ABSOLUTE MAXIMUM RATINGS Supply Voltage -0.6V to 12V Supply Current 100mA Input Voltage (V ) 25V Continuous POL Drain Current (per FET 15mA (set CAL Operating Temperature -40 to 70°C Storage Temperature -50 to 85°C ELECTRICAL CHARACTERISTICS TEST CONDITIONS (Unless otherwise stated):T amb ...

Page 3

... POL =10mA, V =14V 1.8 POL =10mA, V =15.5V 2.0 POL =10mA, V =15.5V 1.8 POL = 5 to 10V CC =-40 to +70°C j =0.1V, V =14V D1 POL =0.1V, V =15.5V D2 POL =25V POL =10k 10 POL =10k 14 POL CAL 4-116 ZNBG3010 ZNBG3011 LIMITS UNITS TYP. MAX 0.2 %/V 0.05 %/°C 2.2 2.4 V 2.0 2.2 V 2.2 2.4 V 2.0 2.2 V 2.2 2.4 V 2.0 2.2 V 0.5 %/V 50 ppm 10 A ...

Page 4

... ZNBG3010 ZNBG3011 TYPICAL CHARACTERISTICS 16 Vcc = (k) cal JFET Drain Current v R cal 2.4 2.3 2.2 Vcc = 10V 2.1 2 Drain Current (mA) JFET Drain Voltage v Drain Current Note:- Operation with loads > 200µA is not guaranteed. 0.0 -0.5 -1.0 Vcc = ...

Page 5

... The ZNBG devices provide all the bias requirements for external FETs, including the generation of the negative supply required for gate biasing, from the single supply voltage.The diagram above shows a single stage from the ZNBG series. The ZNBG3010/11 contains 3 such stages. The negative rail generator is common to both devices. ...

Page 6

... Should the negative bias generator be shorted or overloaded so that the drain current of the external FETs can no longer be controlled, the drain supply to FETs is shut down to avoid damage to the FETs by excessive drain current. ZNBG3010 ZNBG3011 pin. SUB ...

Page 7

... ZNBG3010 ZNBG3011 The following schematic shows the function of the V numberd Q1 and Q2 are powered at any one time, their selection is controlled by the input V This input is designed to be wired to the power input of the LNB via a high value (10k) resistor. With the input voltage of the LNB set at or below 14V, FET Q2 will be enabled. With the input voltage at or above 15 ...

Page 8

... The following block diagram shows the main section of an LNB designed for use with the Astra series of satellites. The ZNBG3010/11 is the core bias and control element of this circuit. The ZNBG provides the negative rail, FET bias control and polarisation switch control, with the minimum of external components ...

Page 9

... CONNECTION DIAGRAM ORDERING INFORMATION Part Number Package ZNBG3010Q16 QSOP16 ZNBG3011Q16 QSOP16 ZNBG3010 ZNBG3011 Part Mark ZNBG3010 ZNBG3011 4-122 ...

Page 10

... ZNBG3010 ZNBG3011 PACKAGE DIMENSIONS IDENTIFICATION RECESS FOR PIN 1 PIN No.1 PIN Millimetres Inches MIN MAX MIN MAX A 4.80 4.90 0.189 0.196 B 0.635 0.025 NOM C 0.177 0.267 0.007 0.011 D 0.20 0.30 0.008 0.012 E 3.81 3.99 0.15 0.157 F 1.35 1.75 0.053 0.069 G 0.10 0.25 0.004 0.01 J 5.79 6.20 0.228 0.244 K 0° 8° 0° 8° Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. ...

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