znbg4000 Zetex Semiconductors plc., znbg4000 Datasheet

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znbg4000

Manufacturer Part Number
znbg4000
Description
Fet Bias Controller
Manufacturer
Zetex Semiconductors plc.
Datasheet

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FET BIAS CONTROLLER
ISSUE 2 - JUNE 1998
DEVICE DESCRIPTION
The ZNBG series of devices are designed to
meet the bias requirements of GaAs and
HEMT FETs commonly used in satellite
receiver LNBs, PMR, cellular telephones etc.
with a minimum of external components.
With the addition of two capacitors and
resistors the devices provide drain voltage
and current control for a number of external
grounded source FETs, generating the
regulated negative rail required for FET gate
biasing whilst operating from a single
supply. This negative bias, at -3 volts, can
also be used to supply other external
circuits.
The ZNBG4000/1 and ZNBG6000/1 contain
four and six bias stages respectively. In
setting drain current the ZNBG4000/1 two
resistors allows individual FET pair control
to different levels, the ZNBG6000/1 two
resistors split control between two and four
FETs. This allows the operating current of
input FETs to be adjusted to minimise noise,
whilst the following FET stages can
separately be adjusted for maximum gain.
The series also offers the choice of drain
v ol t a ge t o b e s e t f or t he F E T s , the
ZNBG4000/6000 gives 2.2 volts drain whilst
the ZNBG4001/6001 gives 2 volts.
FEATURES
Provides bias for GaAs and HEMT FETs
Drives up to four or six FETs
Dynamic FET protection
Drain current set by external resistor
Regulated negative rail generator
requires only 2 external capacitors
Choice in drain voltage
Wide supply voltage range
QSOP surface mount package
4-137
These devices are unconditionally stable
over the full working temperature with the
FETs in place, subject to the inclusion of the
recommended gate and drain capacitors.
These ensure RF stability and minimal
injected noise.
It is possible to use less than the devices full
complement of FET bias controls, unused
drain and gate connections can be left open
circuit without affecting operation of the
remaining bias circuits.
In order to protect the external FETs the
circuits have been designed to ensure that,
under any conditions including power
up/down transients, the gate drive from the
bias circuits cannot exceed the range -3.5V
to 0.7V. Furthermore if the negative rail
experiences a fault condition, such as
overload or short circuit, the drain supply to
the FETs will shut down avoiding excessive
current flow.
The ZNBG4000/1 and ZNBG6000/1 are
available in QSOP16 and 20 pin packages
respectively for the minimum in devices size.
Device operating temperature is -40 to 70°C
to suit a wide range of environmental
conditions.
APPLICATIONS
Satellite receiver LNBs
Private mobile radio (PMR)
Cellular telephones
ZNBG4000
ZNBG4000 ZNBG4001
ZNBG6000 ZNBG6001

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znbg4000 Summary of contents

Page 1

... The ZNBG4000/1 and ZNBG6000/1 contain four and six bias stages respectively. In setting drain current the ZNBG4000/1 two resistors allows individual FET pair control to different levels, the ZNBG6000/1 two resistors split control between two and four FETs ...

Page 2

... E Gate Voltage NG f Oscillator Freq. O DRAIN CHARACTERISTICS I Current D Current Change with with Voltage D ZNBG4000, ZNGB6000 ZNBG4001, ZNBG6001 Voltage Change V with with Power Dissipation (T amb QSOP16 QSOP20 =33k ;R =33k ) CAL1 CAL2 CONDITIONS LIMITS Min Typ ...

Page 3

... The negative bias voltages specified are generated on-chip using an internal oscillator. Two external capacitors, C 47nF are required for this purpose. 2. The characteristics are measured using two external reference resistors R ground. For the ZNBG4000, resistor R sets the drain current of FETs 1 and 2, resistor R CAL1 ...

Page 4

... ZNBG4000 ZNBG4000 ZNBG4001 ZNBG6000 ZNBG6001 TYPICAL CHARACTERISTICS 16 Vcc = (k) cal JFET Drain Current v R 2.4 2.3 2.2 Vcc = 10V 2.1 2 Drain Current (mA) JFET Drain Voltage v Drain Current Note:- Operation with loads > 200µA is not guaranteed. ...

Page 5

... The ZNBG devices provide all the bias requirements for external FETs, including the generation of the negative supply required for gate biasing, from the single supply voltage. The diagram above shows a single stage from the ZNBG series. The ZNBG4000/1 contains 4 such stages, the ZNBG6000/1 contains 6. The negative rail generator is common to all devices. ...

Page 6

... FETs are operated. Both ZNBG devices CAL1/2 have the facility to program different drain currents into selected FETs. Two R provided. For the ZNBG4000, resistor R sets the drain current of FETs 3 and 4. For the ZNBG6000, resistor R of FETs 1 and 4, resistor R sets the drain current of FETs and 6 ...

Page 7

... FETs can no longer be controlled, the drain supply to FETs is shut down to avoid damage to the FETs by excessive drain current. The following diagrams show the ZNBG4000/1 and ZNBG6000/1 in typical LNB applications. Within each FET gain stage the numbering system indicates how the bias stages relate to the application circuits ...

Page 8

... ZNBG4000 ZNBG4000 ZNBG4001 ZNBG6000 ZNBG6001 Dual standard or enhanced LNB block diagram. High Gain 4-144 ...

Page 9

... CONNECTION DIAGRAMS ZNBG4000 ZNBG4001 ORDERING INFORMATION Part Number Package ZNBG4000Q16 QSOP16 ZNBG4001Q16 QSOP16 ZNBG6000Q20 QSOP20 ZNBG6001Q20 QSOP20 ZNBG4000 ZNBG4001 ZNBG4000 ZNBG6000 ZNBG6001 ZNBG6000 ZNBG6001 Part Mark ZNBG4000 ZNBG4001 ZNBG6000 ZNBG6001 4-145 ...

Page 10

... ZNBG4000 ZNBG4001 ZNBG4000 ZNBG6000 ZNBG6001 PACKAGE DIMENSIONS IDENTIFICATION RECESS FOR PIN 1 PIN No.1 QSOP16 PIN Millimetres Inches MIN MAX MIN MAX A 4.80 4.90 0.033 0.039 B 0.635 0.025 NOM C 0.177 0.267 0.007 0.011 D 0.20 0.30 0.008 0.012 E 3.81 3.99 0.15 0.157 F 1.35 1.75 0.053 0.069 G 0.10 0.25 0.004 0.01 J 5.79 6.20 0.228 0.244 K 0° 8° 0° ...

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