tsdf12830ys Vishay, tsdf12830ys Datasheet

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tsdf12830ys

Manufacturer Part Number
tsdf12830ys
Description
Dual Mosmic Amplifiers Tv-tuner Prestage With Integrated Band Switch One-line Swit
Manufacturer
Vishay
Datasheet
Dual - MOSMIC
with Integrated Band Switch for One-Line Switching
Comments
MOSMIC - MOS Monolithic Integrated Circuit
Description
The Dual-MOSMIC
the well-known SOT-363 plastic package, is a combi-
nation of two different MOSMIC
mon Source and common Gate 2 leads and an
integrated switch. One of the MOSMIC stages is opti-
mized for use in VHF applications, especially regard-
ing cross modulation performance and noise figure at
lower VHF frequencies, whereas the other stage is
optimized for use in UHF applications regarding gain
and noise figure performance at higher frequencies of
UHF range. The integrated switch is operated by the
Gate 1 bias of the UHF amplifier on Pin 6. All of the
Gates are protected against excessive input voltage
surges by integrated antiserial diodes between them-
selves and Source.
Features
Applications
Low noise gain controlled VHF and UHF input stages
with 5 V supply voltage, such as in digital and analog
TV tuners and in other multimedia and communica-
tions equipment.
Document Number 85171
Rev. 1.2, 25-Aug-04
VISHAY
• Two differently optimized amplifiers in a single
• Internal switch for saving lines on PCB layout as
• Integrated gate protection diodes
• Low noise figure, high gain
• Typical forward transadmittance of 31 mS
• Superior cross modulation at gain reduction
• High AGC-range with soft slope
• Main AGC control range from 3 V to 0.5 V
package. One of them has a fully internal self-bias-
ing network on chip and the other has a partly inte-
grated bias for easy Gate 1 switch-off with PNP
switching transistors inside PLL -IC
well as external components
resp. 28 mS
®
TSDF12830YS, assembled in
®
- two AGC Amplifiers for TV-Tuner Prestage
®
amplifiers with com-
Typical Application
Mechanical Data
Case: SOT-363 Plastic case
Weight: approx. 6.0 mg
V - Vishay
Y - Year, is variable for digit from 0 to 9
(e.g. 3 = 2003, 4 = 2004)
CW - Calendar Week, is variable for
number from 01 to 52
Number of Calendar Week is always indicating
place of pin 1
Pinning:
1 = Gate 1 (VHF amplifier), 2 = Gate 2 (common)
3 = Drain (VHF amplifier), 4 = Drain (UHF amplifier),
5 = Source (common), 6 = Gate1 (UHF amplifier)
V
V
GG
GG
AGC
VHF
V
UHF
in
in
GG
= 5 V: UHF AMP is on; VHF AMP is off
= 0 V: UHF AMP is off; VHF AMP is on
(0 = shorted to Ground or open)
C
CW
VY
6
1
RG1
C
C
WM5
5
2
Electrostatic sensitive device.
Observe precautions for handling
1
6
4
3
2
G2 (common)
G1
G1
Vishay Semiconductors
TSDF12830YS
AMP1
AMP2
S (common)
5
D
D
3
4
RFC
RFC
18597
C
C
www.vishay.com
18598
VHF
UHF
+5 V
+5 V
out
out
1

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tsdf12830ys Summary of contents

Page 1

... Integrated Band Switch for One-Line Switching Comments MOSMIC - MOS Monolithic Integrated Circuit Description ® The Dual-MOSMIC TSDF12830YS, assembled in the well-known SOT-363 plastic package combi- ® nation of two different MOSMIC mon Source and common Gate 2 leads and an integrated switch. One of the MOSMIC stages is opti- ...

Page 2

... TSDF12830YS Vishay Semiconductors Parts Table Part TSDF12830YS Absolute Maximum Ratings °C, unless otherwise specified amb Amplifier 1 Following data are valid for operating amplifier 1 (pin which is optimized for VHF applications Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak ...

Page 3

... I G2S DS G1SS = ± I G1S DS G2SS = RG1 G2S DSO = 20 µ G2S D G1S(OFF =100 kΩ, V RG1 G1 G2S(OFF) TSDF12830YS Vishay Semiconductors Min Typ. Max 0.3 1.2 Min Typ. Max ...

Page 4

... TSDF12830YS Vishay Semiconductors Electrical AC Characteristics °C, unless otherwise specified amb Amplifier Gate RG1 G2S Following data are valid for operating amplifier 1(pin which is optimized for VHF applications Parameter Forward transadmittance Gate 1 input capacitance ...

Page 5

... 0.5 mS 400 MHz Sopt = 1 mS 800 MHz Sopt X mod = 50 MHz, X mod = 50 MHz, will raise and improved intermodulation behavior will be performed. DSO TSDF12830YS Vishay Semiconductors Min Typ. Max 1.7 2 5.0 7.0 1.0 1.5 1.3 2.0 90 dBµV 100 105 dBµ ...

Page 6

... TSDF12830YS Vishay Semiconductors Package Dimensions in mm (Inches) 0.10 (0.004) 10 2.20 (0.087) 1.80 (0.071) 0.30 (0.012) 0.20 (0.009) 0.65 (0.026) 1.3 (0.052) www.vishay.com 6 0.25 (0.010) 1.00 (0.039) 0.10 (0.004) 0.80 (0.031) Mounting Pad Layout 1.30 (0.052) Ref. VISHAY ISO Method E 0.35 (0.014) 0.65 (0.026) Ref. 14280 Document Number 85171 Rev. 1.2, 25-Aug-04 ...

Page 7

... Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 85171 Rev. 1.2, 25-Aug-04 and may do so without further notice. TSDF12830YS Vishay Semiconductors www.vishay.com 7 ...

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