tsdf1220f Vishay, tsdf1220f Datasheet

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tsdf1220f

Manufacturer Part Number
tsdf1220f
Description
Silicon Npn Planar Rf Transistor
Manufacturer
Vishay
Datasheet
Silicon NPN Planar RF Transistor
Description
The main purpose of this bipolar transistor is broad-
band amplification up to more than 2 GHz. In the
space-saving 3-pin surface-mount SOT-490 package
electrical performance and reliability are taken to a
new level covering a smaller footprint on PC boards
than previous packages. .
In addition to space savings, the SOT-490 provides a
higher level of reliability than other 3-pin packages,
such as more resistance to moisture. Due to the short
length of its leads the SOT-490 is also reducing pack-
age inductances resulting in some better electrical
performance. All of these aspects make this device
an ideal choice for demanding RF applications
Features
Parts Table
Absolute Maximum Ratings
T
Document Number 85106
Rev. 1.3, 02-May-05
• Low power applications
• Very low noise figure
• High transition frequency f
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
TSDF1220F
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
amb
and WEEE 2002/96/EC
= 25 °C, unless otherwise specified
Parameter
Part
T
amb
T
= 12 GHz
≤ 60 °C
Test condition
F2
e3
Marking
Applications
For low noise applications such as preamplifiers, mix-
ers and oscillators in analog and digital TV-systems
(e.g., satellite tuners) up to microwave frequencies.
Mechanical Data
Typ: TSDF1220F
Case: SOT-490 Plastic case
Weight: approx. 2.5 mg
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Symbol
V
V
V
T
P
CBO
CEO
EBO
I
T
stg
C
tot
j
2
1
Electrostatic sensitive device.
Observe precautions for handling.
3
SOT-490
- 65 to + 150
Vishay Semiconductors
Value
200
150
40
9
6
2
TSDF1220F
Package
16867
www.vishay.com
Unit
mW
mA
°C
°C
V
V
V
1

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tsdf1220f Summary of contents

Page 1

... Document Number 85106 Rev. 1.3, 02-May-05 2 Applications For low noise applications such as preamplifiers, mix- ers and oscillators in analog and digital TV-systems (e.g., satellite tuners microwave frequencies. Mechanical Data Typ: TSDF1220F e3 Case: SOT-490 Plastic case Weight: approx. 2.5 mg Pinning Collector Base Emitter Marking F2 Test condition ...

Page 2

... TSDF1220F Vishay Semiconductors Maximum Thermal Resistance Parameter Junction ambient glass fibre printed board ( 1.5) mm Electrical DC Characteristics °C, unless otherwise specified amb Parameter Collector-emitter cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown ...

Page 3

... C S Sopt = 20 mA Ω Sopt mA GHz 21se = 20 mA GHz 0 0.20 (0.008 0.30 (0.012) 0.65(0.026) 0.5 (0.016) TSDF1220F Vishay Semiconductors Min Typ. Max 12 0.3 0.35 0.5 1.2 13 1.5 (0.059) 1.7 (0.066) 0.4 (0.016) 1.15(0.045) www.vishay.com Unit GHz dBm ...

Page 4

... TSDF1220F Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment ...

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