tsdf1920w Vishay, tsdf1920w Datasheet

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tsdf1920w

Manufacturer Part Number
tsdf1920w
Description
25 Ghz Silicon Npn Planar Rf Transistor
Manufacturer
Vishay
Datasheet

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25 GHz Silicon NPN Planar RF Transistor
Features
Applications
For RF front-ends, low noise, and wideband applica-
tions, such as in analogue and digital cellular and
cordless phones
(DECT, PHD), in TV systems (e.g. satellite tuners), in
high frequency oscillators up to 12 GHz, in pagers
and radar detectors.
Parts Table
Absolute Maximum Ratings
T
Maximum Thermal Resistance
1)
Document Number 85092
Rev. 1.3, 02-May-05
• Very low noise figure
• Very high power gain
• High transition frequency f
• Low feedback capacitance
• Emitter pins are thermal leads
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
TSDF1920W
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Junction ambient
amb
on glass fibre printed board (25 x 20 x 1.5) mm
and WEEE 2002/96/EC
= 25 °C, unless otherwise specified
Parameter
Parameter
Part
T
1)
amb
T
= 24 GHz
≤ 60 °C
Test condition
Test condition
YH3
3
plated with 35 μm Cu
e3
Marking
Mechanical Data
Case: SOT-343R Plastic case
Weight: approx. 6.0 mg
Pinning: 1 = Emitter, 2 = Base,
3 = Emitter, 4 = Collector
Symbol
Symbol
V
V
V
R
T
P
CBO
CEO
EBO
I
T
thJA
stg
C
tot
4
j
1
2
3
Electrostatic sensitive device.
Observe precautions for handling.
SOT-343R
- 65 to + 150
Vishay Semiconductors
Value
Value
200
150
450
3.5
1.5
10
40
TSDF1920W
Package
16712
www.vishay.com
K/W
Unit
mW
Unit
mA
°C
°C
V
V
V
1

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tsdf1920w Summary of contents

Page 1

... YH3 Test condition Symbol V CBO V CEO V EBO tot stg Test condition Symbol R thJA 3 plated with 35 μm Cu TSDF1920W Vishay Semiconductors 2 3 16712 Electrostatic sensitive device. Observe precautions for handling. Package SOT-343R Value Unit 10 V 3 200 mW 150 ° 150 ° ...

Page 2

... TSDF1920W Vishay Semiconductors Electrical DC Characteristics °C, unless otherwise specified amb Parameter Collector-emitter cut-off current Collector-base cut-off current Collector-emitter breakdown mA voltage Collector-emitter saturation mA voltage DC forward current transfer ratio www.vishay.com 2 Test condition ...

Page 3

... Sopt L Lopt 21e 12e = 25 mA 21e = 50 Ω GHz mA Ω GHz mA -1dB = 50 Ω GHz L TSDF1920W Vishay Semiconductors Min Typ. Max 24 0.15 0.3 0.4 0.6 1.2 19 13.5 16 12238 www.vishay.com Unit GHz dBm dBm 3 ...

Page 4

... TSDF1920W Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment ...

Page 5

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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