k4s161622d Samsung Semiconductor, Inc., k4s161622d Datasheet

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k4s161622d

Manufacturer Part Number
k4s161622d
Description
512k X 16bit X 2 Banks Synchronous Dram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet

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K4S161622D
512K x 16Bit x 2 Banks Synchronous DRAM
FEATURES
• 3.3V power supply
• LVTTL compatible with multiplexed address
• Dual banks operation
• MRS cycle with address key programs
• All inputs are sampled at the positive going edge of the system
• Burst Read Single-bit Write operation
• DQM for masking
• Auto & self refresh
• 15.6us refresh duty cycle (2K/32ms)
FUNCTIONAL BLOCK DIAGRAM
clock
-. CAS Latency ( 2 & 3)
-. Burst Length (1, 2, 4, 8 & full page)
-. Burst Type (Sequential & Interleave)
ADD
CLK
LCKE
CLK
LRAS
CKE
Bank Select
LCBR
CS
LWE
RAS
Timing Register
LCAS
CAS
K4S161622D-TC/L55
K4S161622D-TC/L60
K4S161622D-TC/L70
K4S161622D-TC/L80
K4S161622D-TC/L10
GENERAL DESCRIPTION
Latency & Burst Length
ORDERING INFORMATION
rate Dynamic RAM organized as 2 x 524,288 words by 16 bits,
fabricated with SAMSUNG s high performance CMOS technol-
ogy. Synchronous design allows precise cycle control with the
use of system clock I/O transactions are possible on every clock
cycle. Range of operating frequencies, programmable burst
length and programmable latencies allow the same device to be
useful for a variety of high bandwidth, high performance mem-
ory system applications.
Programming Register
WE
Data Input Register
The K4S161622D is 16,777,216 bits synchronous high data
Column Decoder
512K x 16
512K x 16
Part NO.
L(U)DQM
LWCBR
*
Samsung Electronics reserves the right to
change products or specification without
notice.
MAX Freq.
183MHz
166MHz
143MHz
125MHz
100MHz
CMOS SDRAM
LDQM
Interface Package
LVTTL
DQi
LWE
LDQM
TSOP(II)
50

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k4s161622d Summary of contents

Page 1

... LCBR CLK CKE GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized 524,288 words by 16 bits, fabricated with SAMSUNG s high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle ...

Page 2

... K4S161622D PIN CONFIGURATION (TOP VIEW) A10/AP PIN FUNCTION DESCRIPTION Pin Name CLK System Clock CS Chip Select CKE Clock Enable /AP Address Bank Select Address RAS Row Address Strobe CAS Column Address Strobe WE Write Enable L(U)DQM Data Input/Output Mask DQ ~ Data Input/Output ...

Page 3

... V (min) = -2.0V AC. The undershoot voltage duration Any input DDQ Input leakage currents include HI-Z output leakage for all bi-directional buffers with Tri-State outputs. 4. The VDD condition of K4S161622D-55/60 is 3.135V~3.6V. CAPACITANCE (V = 3.3V Pin Clock RAS, CAS, WE, CS, CKE, L(U)DQM Address ...

Page 4

... I CC6 Note : 1. Unless otherwise notes, Input level is CMOS(V 2. Measured with outputs open. Addresses are changed only one time during tcc(min). 3. Refresh period is 32ms. Addresses are changed only one time during tcc(min). 4. K4S161622D-TC** 5. K4S161622D-TL Test Condition Burst Length = (min) ...

Page 5

... Output load condition 3.3V 1200 Output 50pF 870 (Fig Output Load Circuit Note : 1. The DC/AC Test Output Load of K4S161622D-55/60/70 is 30pF. 2. The VDD condition of K4S161622D-55/60 is 3.135V~3.6V. OPERATING AC PARAMETER (AC operating conditions unless otherwise noted) Parameter CAS Latency CLK cycle time Row active to row active delay ...

Page 6

... K4S161622D Parameter CLK cycle time Row active to row active delay RAS to CAS delay Row precharge time Row active time Row cycle time 2. Minimum delay is required to complete write. 3. All parts allow every cycle column address change case of row precharge interrupt, auto precharge and read burst stop. ...

Page 7

... K4S161622D SIMPLIFIED TRUTH TABLE COMMAND Register Mode Register Set Auto Refresh Entry Refresh Self Refresh Exit Bank Active & Row Addr. Read & Auto Precharge Disable Column Address Auto Precharge Enable Write & Auto Precharge Disable Column Address Auto Precharge Enable ...

Page 8

... K4S161622D MODE REGISTER FIELD TABLE TO PROGRAM MODES Register Programmed with MRS Address RFU RFU W.B.L Function Test Mode A A Type Mode Register Set 0 1 Reserved 1 0 Reserved 1 1 Reserved Write Burst Length Length Burst 1 Single Bit POWER UP SEQUENCE SDRAMs must be powered up and initialized in a predefined manner to prevent undefined operations. 1. Apply power and start clock. Must maintain CKE= " ...

Page 9

... K4S161622D BURST SEQUENCE (BURST LENGTH = 4) Initial Address BURST SEQUENCE (BURST LENGTH = 8) Initial Address ...

Page 10

... K4S161622D DEVICE OPERATIONS CLOCK (CLK) The clock input is used as the reference for all SDRAM opera- tions. All operations are synchronized to the positive going edge of the clock. The clock transitions must be monotonic between V and V . During operation with CKE high all inputs are ...

Page 11

... K4S161622D DEVICE OPERATIONS (Continued) MODE REGISTER SET (MRS) The mode register stores the data for controlling the various operating modes of SDRAM. It programs the CAS latency, burst type, burst length, test mode and various vendor specific options to make SDRAM useful for variety of different applications. The ...

Page 12

... K4S161622D DEVICE OPERATIONS (Continued) DQM OPERATION The DQM is used to mask input and output operations. It works similar to OE during read operation and inhibits writing during write operation. The read latency is two cycles from DQM and zero cycle for write, which means DQM masking occurs two cycles later in read cycle and occurs in the same cycle during write cycle ...

Page 13

... K4S161622D BASIC FEATURE AND FUNCTION DESCRIPTIONS 1. CLOCK Suspend 1) Clock Suspended During Write (BL=4) CLK CMD WR CKE Internal CKE DQ(CL2 DQ(CL3 Not Written 2. DQM Operation 1) Write Mask (BL=4) CLK WR CMD DQM DQ(CL2 DQ(CL3 DQM to Data-in Mask = 0 ...

Page 14

... K4S161622D 3. CAS Interrupt (I) Note 1 1) Read interrupted by Read (BL=4) CLK CMD ADD DQ(CL2 DQ(CL3) tCCD Note 2 2) Write interrupted by Write (BL=2) CLK CMD WR WR tCCD Note ADD tCDL Note 3 *Note : 1. By " Interrupt" meant to stop burst read/write by external command before the end of burst. ...

Page 15

... K4S161622D 4. CAS Interrupt (II) : Read Interrupted by Write & DQM (a) CL=2, BL=4 CLK i) CMD RD DQM DQ ii) CMD RD DQM DQ iii) CMD RD DQM DQ RD iv) CMD DQM DQ (b) CL=3, BL=4 CLK i) CMD RD DQM DQ ii) CMD RD DQM DQ RD iii) CMD DQM DQ RD iii) CMD DQM DQ RD iv) CMD DQM DQ *Note : 1. To prevent bus contention, there should be at least one gap between data in and data out. ...

Page 16

... K4S161622D 5. Write Interrupted by Precharge & DQM CLK WR CMD DQM *Note : 2. To inhibit invalid write, DQM should be issued. 3. This precharge command and burst write command should be of the same bank, otherwise it is not precharge interrupt but only the other bank precharge of dual banks operation. ...

Page 17

... K4S161622D 6. Precharge 1) Normal Write (BL=4) CLK WR CMD Normal Read (BL=4) CLK CMD RD DQ(CL2) DQ(CL3) 7. Auto Precharge 1) Normal Write (BL=4) CLK WR CMD Normal Read (BL=4) CLK CMD RD DQ(CL2) DQ(CL3) *Note : Last data in to row precharge delay RDL 2. Number of valid output data after row precharge : for CAS Latency = respectively. ...

Page 18

... K4S161622D 8. Burst Stop & Interrupted by Precharge 1) Normal Write (BL=4) CLK WR CMD DQM Read Interrupted by Precharge (BL=4) CLK CMD RD DQ(CL2) DQ(CL3) 9. MRS 1) Mode Register Set CLK Note 4 CMD PRE tRP *Note : CLK RDL CLK ; Last data in to burst stop delay. ...

Page 19

... K4S161622D 10. Clock Suspend Exit & Power Down Exit 1) Clock Suspend (=Active Power Down) Exit CLK CKE Internal Note 1 CLK CMD 11. Auto Refresh & Self Refresh 1) Auto Refresh & Self Refresh Note 3 CLK Note 4 CMD PRE CKE tRP 2) Self Refresh Note 6 CLK ...

Page 20

... K4S161622D 12. About Burst Type Control Sequential Counting Basic MODE Interleave Counting Random Random column Access MODE CLK CCD 13. About Burst Length Control 1 2 Basic MODE 4 8 Full Page Special BRSW MODE Random Burst Stop MODE RAS Interrupt (Interrupted by Precharge) Interrupt ...

Page 21

... K4S161622D FUNCTION TRUTH TABLE (TABLE 1) Current CS RAS CAS State IDLE Row Active Read ...

Page 22

... K4S161622D FUNCTION TRUTH TABLE (TABLE 1) Current CS RAS CAS State Row Activating Refreshing Mode Register Accessing Abbreviations : RA = Row Address NOP = No Operation Command *Note : 1 ...

Page 23

... K4S161622D FUNCTION TRUTH TABLE (TABLE 2) CKE Current CKE CS (n-1) n State Self Refresh All Banks Precharge Power Down All ...

Page 24

... K4S161622D Single Bit Read-Write-Read Cycle(Same Page) @CAS Latency=3, Burst Length=1 tCH CLOCK tCL tCC CKE *Note 1 CS tRCD tSH RAS tSS tSH CAS tSS tSH ADDR Ra Ca tSS *Note 2 *Note 2 /AP Ra *Note 3 10 tRAC DQ WE DQM Row Active ...

Page 25

... K4S161622D *Note : 1. All inputs expect CKE & DQM can be don 2. Bank active & read/write are controlled by BA Enable and disable auto precharge function are controlled by A10/AP in read/write command. A10/ A10/AP and BA control bank precharge when precharge command is asserted. ...

Page 26

... K4S161622D Power Up Sequence CLOCK CKE High level is necessary CS tRP RAS CAS ADDR BA A /AP 10 High DQM High level is necessary Precharge Auto Refresh (All Banks tRC Auto Refresh CMOS SDRAM tRC Key RAa ...

Page 27

... K4S161622D Read & Write Cycle at Same Bank @Burst Length CLOCK CKE CS tRCD RAS CAS ADDR Ra Ca0 CL=2 DQ tRAC *Note 3 CL=3 tRAC *Note 3 WE DQM Row Active Read (A-Bank) (A-Bank) *Note : 1. Minimum row cycle times is required to complete internal DRAM operation. ...

Page 28

... K4S161622D Page Read & Write Cycle at Same Bank @Burst Length CLOCK CKE CS tRCD RAS CAS Ra Ca0 ADDR CL=2 CL=3 WE DQM Row Active Read (A-Bank) (A-Bank) *Note : 1. To write data before burst read ends, DQM should be asserted three cycle prior to write command to avoid bus contention ...

Page 29

... K4S161622D Page Read Cycle at Different Bank @Burst Length CLOCK CKE *Note 1 CS RAS CAS ADDR RAa CAa RBb BA A /AP RAa RBb 10 DQ CL=2 CL=3 WE DQM Row Active Row Active (A-Bank) (B-Bank) Read (A-Bank) *Note : 1. CS can be don't cared when RAS, CAS and WE are high at the clock high going dege. ...

Page 30

... K4S161622D Page Write Cycle at Different Bank @Burst Length CLOCK CKE CS RAS CAS RAa CAa ADDR BA A /AP RAa 10 DQ DAa0 DAa1 DAa2 WE DQM Row Active Row Active (A-Bank) Write (A-Bank) *Note : 1. To interrupt burst write by Row precharge, DQM should be asserted to mask invalid input data. ...

Page 31

... K4S161622D Read & Write Cycle at Different Bank @Burst Length CLOCK CKE CS RAS CAS ADDR RAa CAa BA A /AP RAa 10 DQ CL=2 CL=3 WE DQM Row Active Read (A-Bank) (A-Bank) *Note : 1. t should be met to complete write. CDL HIGH RBb RBb QAa0 QAa1 QAa2 QAa3 ...

Page 32

... K4S161622D Read & Write Cycle with Auto Precharge I @Burst Length CLOCK CKE CS RAS CAS ADDR / CL=2 CL=3 WE DQM Read with Row Active Auto Pre (A-Bank) (A-Bank) Row Active (B-Bank) *Note: * When Read(Write) command with auto precharge is issued at A-Bank after A and B Bank activation. ...

Page 33

... K4S161622D Read & Write Cycle with Auto Precharge II @Burst Length CLOCK CKE CS RAS CAS ADDR / CL=2 CL=3 WE DQM Row Active Auto Precharge (A-Bank) *Note : * Any command to A-bank is not allowed in this period. tRP is determined from at auto precharge start point ...

Page 34

... K4S161622D Clock Suspension & DQM Operation Cycle @CAS Latency=2, Burst Length CLOCK CKE CS RAS CAS ADDR / DQM Row Active Read *Note : 1. DQM is needed to prevent bus contention Qa0 Qa1 Qa2 Qa3 tSHZ ...

Page 35

... K4S161622D Read Interrupted by Precharge Command & Read Burst Stop Cycle @Burst Length=Full page CLOCK CKE CS RAS CAS ADDR RAa CAa BA A /AP RAa 10 DQ CL=2 CL=3 WE DQM Row Active Read (A-Bank) (A-Bank) *Note : 1. At full page mode, burst is wrap-around at the end of burst. So auto precharge is impossible. ...

Page 36

... K4S161622D Write Interrupted by Precharge Command & Write Burst Stop Cycle @ Burst Length=Full page CLOCK CKE CS RAS CAS ADDR RAa CAa BA A /AP RAa 10 DQ DAa0 DAa1 DAa2 DAa3 DAa4 WE DQM Row Active Write (A-Bank) (A-Bank) *Note : 1. At full page mode, burst is wrap-around at the end of burst. So auto precharge is impossible. ...

Page 37

... K4S161622D Burst Read Single bit Write Cycle @Burst Length CLOCK *Note 1 CKE CS RAS CAS ADDR RAa CAa BA A /AP RAa 10 DQ CL=2 DAa0 CL=3 DAa0 WE DQM Row Active Row Active (A-Bank) Write (A-Bank) *Note : 1. BRSW modes is enabled by setting A At the BRSW Mode, the burst length at write is fixed to "1" regaredless of programmed burst length. ...

Page 38

... K4S161622D Active/Precharge Power Down Mode @CAS Latency=2, Burst Length CLOCK tSS *Note 1 *Note 2 CKE *Note 3 CS RAS CAS ADDR DQM Precharge Power-down Entry *Note : 1. Both banks should be in idle state prior to entering precharge power down mode. ...

Page 39

... K4S161622D Self Refresh Entry & Exit Cycle CLOCK *Note 2 *Note 1 CKE tSS CS RAS CAS ADDR Hi-Z WE DQM Self Refresh Entry *Note : TO ENTER SELF REFRESH MODE 1. CS, RAS & CAS with CKE should be low at the same clcok cycle. ...

Page 40

... K4S161622D Mode Register Set Cycle CLOCK HIGH CKE CS *Note 2 RAS *Note 1 CAS *Note 3 ADDR Key Ra DQ Hi-Z WE DQM MRS New Command * Both banks precharge should be completed before Mode Register Set cycle and auto refresh cycle. MODE REGISTER SET CYCLE *Note : 1. CS, RAS, CAS, & ...

Page 41

... K4S161622D PACKAGE DIMENSIONS 50-TSOP2-400CF #50 #1 0.10MAX [ ] 0.075MAX +0.10 (0.875) 0.30 -0.05 #26 #25 20.95 0.10 0.80TYP +0.10 [0.80 0.08] 0.05MIN 0.35 -0.05 CMOS SDRAM Unit : Millimeters 0~8 0.25 TYP +0.075 0.125 -0.035 1.20MAX 1.00 0.10 ...

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