k4s1g0732d Samsung Semiconductor, Inc., k4s1g0732d Datasheet
k4s1g0732d
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k4s1g0732d Summary of contents
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... SDRAM stacked 1Gb D-die (x4, x8) stacked 1Gb D-die SDRAM Specification 54 TSOP-II with Pb-Free INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS " ...
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... SDRAM stacked 1Gb D-die (x4, x8) Table of Contents 1.0 Features ....................................................................................................................................... 4 2.0 General Description.................................................................................................................... 4 3.0 Ordering Information .................................................................................................................. 4 4.0 Package Physical Dimension ................................................................................................... 5 5.0 Functional Block Diagram.......................................................................................................... 6 6.0 Pin Configuration (Top view) ..................................................................................................... 7 7.0 Pin Function Description ........................................................................................................... 7 8.0 Absolute Maximum Ratings........................................................................................................8 9.0 DC Operating Conditions ........................................................................................................... 8 10.0 Capacitance............................................................................................................................... 8 11.0 DC Characteristics (x4) ............................................................................................................9 12.0 DC Characteristics (x8) ..........................................................................................................10 13.0 DC Characteristics (x16) ........................................................................................................11 14.0 AC Operating Test Conditions ...............................................................................................12 15 ...
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... SDRAM stacked 1Gb D-die (x4, x8) Revision History Revision Month 1.0 November Year 2005 - Revision 1.0 SDRAM History Rev. 1.0 November. 2005 ...
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... General Description The K4S1G0632D / K4S1G0732D is 1,073,741,824bits synchronous high data rate Dynamic RAM organized 67,108,864 33,554,432 words by 8 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable ...
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... SDRAM stacked 1Gb D-die (x4, x8) 4.0 Package Physical Dimension #54 #1 0.10 MAX 0.71 5.0 Functional Block Diagram CK,CK,CAS RAS,WE,DM 128Mx4 CKE1,CS1 128Mx4 CKE0,CS0 DQ0 ~ DQ3 st.256Mb x 4 #28 #27 22.53 MAX 22.22 ± 0.10 0.80 0.25~0.40 54Pin TSOP(II) Stack Package Dimension CK,CK,CAS RAS,WE,DM CKE1,CS1 CKE0,CS0 A0-A12, BA0,BA1 SDRAM 0~8°C 0.25 TYP +0.075 ...
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... SDRAM stacked 1Gb D-die (x4, x8) 6.0 Pin Configuration (Top view DQ0 V DDQ N.C DQ1 V SSQ N.C DQ2 V DDQ N.C DQ3 V SSQ N CS1 WE CAS RAS CS0 BA0 BA1 A10/AP A10/ 7.0 Pin Function Description Pin Name CLK System clock CS0~1 Chip select ...
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... SDRAM stacked 1Gb D-die (x4, x8) 8.0 Absolute Maximum Ratings Parameter Voltage on any pin relative to Vss Voltage on V supply relative to Vss DD Storage temperature Power dissipation Short circuit current Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. ...
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... SDRAM stacked 1Gb D-die (x4, x8) 11.0 DC Characteristics (x4) Parameter Symbol Operating current I CC1 (One bank active CC2 Precharge standby current in power-down mode PS CKE & CLK ≤ CC2 I N CC2 Precharge standby current in non power-down mode I NS CC2 I P Active standby current in ...
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... Refresh current I CC5 Self refresh current I CC6 Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. K4S1G0732D-UC 4. K4S1G0732D-UL 5. Unless otherwise noted, input swing IeveI is CMOS(V (Recommended operating condition unless otherwise noted, T Test Condition Burst length = 1 ≥ (min CKE ≤ ...
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... SDRAM stacked 1Gb D-die (x4, x8) 13.0 AC Operating Test Conditions Parameter AC input levels (Vih/Vil) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition 3.3V Output 870Ω (Fig output load circuit 14.0 Operating AC Parameter Parameter ...
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... SDRAM stacked 1Gb D-die (x4, x8) 15.0 AC Characteristics Parameter CAS latency=3 CLK cycle time CAS latency=2 CAS latency=3 CLK to valid output delay CAS latency=2 CAS latency=3 Output data hold time CAS latency=2 CLK high pulse width CLK low pulse width Input setup time ...
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... SDRAM stacked 1Gb D-die (x4, x8) 17.0 IBIS Specification I Characteristics (Pull-up) OH 100MHz 100MHz Voltage 133MHz 133Mhz Min Max (V) I (mA) I (mA) 3.45 -2.4 3.3 -27.3 3.0 0.0 -74.1 2.6 -21.1 -129.2 2.4 -34.1 -153.3 2.0 -58.7 -197.0 1.8 -67.3 -226.2 1.65 -73.0 -248.0 1.5 -77.9 -269.7 1.4 -80.8 -284.3 1.0 -88.6 -344.5 0.0 -93.0 -502.4 I Characteristics (Pull-down) OL 100MHz 100MHz Voltage 133MHz 133MHz Min Max (V) I (mA) I (mA) 0.0 0.0 0.0 0.4 27.5 70.2 0.65 41.8 107.5 0.85 51.6 133.8 1.0 58.0 151.2 1 ...
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... SDRAM stacked 1Gb D-die (x4, x8) V Clamp @ CLK, CKE, CS, DQM & (V) I (mA) DD 0.0 0.0 0.2 0.0 0.4 0.0 0.6 0.0 0.7 0.0 0.8 0.0 0.9 0.0 1.0 0.23 1.2 1.34 1.4 3.02 1.6 5.06 1.8 7.35 2.0 9.83 2.2 12.48 2.4 15.30 2.6 18.31 V Clamp @ CLK, CKE, CS, DQM & (V) I (mA) SS -2.6 -57.23 -2.4 -45.77 -2.2 -38.26 -2.0 -31.22 -1.8 -24.58 -1.6 -18.37 -1.4 -12.56 -1.2 -7.57 -1.0 -3.37 -0.9 -1.75 -0.8 -0.58 -0.7 -0.05 -0.6 0.0 -0.4 0.0 -0.2 0.0 0.0 0.0 Minimum V clamp current DD (Referenced Voltage I (mA) Minimum V clamp current -10 -20 -30 -40 -50 ...
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... MRS can be issued only at all banks precharge state. A new command can be issued after 2 CLK cycles of MRS. 3. Auto refresh functions are as same as CBR refresh of DRAM. The automatical precharge without row precharge command is meant by "Auto". Auto/self refresh can be issued only at all banks precharge state. ...