mt18vddf12872dg-335 Micron Semiconductor Products, mt18vddf12872dg-335 Datasheet

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mt18vddf12872dg-335

Manufacturer Part Number
mt18vddf12872dg-335
Description
512mb, 1gb X72, Ecc, Dr 184-pin Ddr Sdram Rdimm
Manufacturer
Micron Semiconductor Products
Datasheet
DDR SDRAM RDIMM
MT18VDDF6472D – 512MB
MT18VDDF12872D – 1GB
For component data sheets, refer to Micron’s Web site:
Features
• 184-pin, registered dual in-line memory module
• Fast data transfer rates: PC2100, PC2700, or PC3200
• 512MB (64 Meg x 72) and 1GB (128 Meg x 72)
• Supports ECC error detection and correction
• V
• V
• 2.5V I/O (SSTL_2-compatible)
• Internal, pipelined double data rate (DDR)
• Bidirectional data strobe (DQS) transmitted/
• Differential clock inputs (CK and CK#)
• Multiple internal device banks for concurrent
• Dual rank
• Selectable burst lengths (BL): 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 7.8125µs
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum
• Gold edge contacts
184-Pin RDIMM (MO-206) Figures
Figure 1:
PDF: 09005aef807eb17d/Source: 09005aef807d24c9
DDF18C64_128x72D.fm - Rev. C 1/08 EN
PCB height: 28.58mm (1.125in)
(RDIMM)
(-40B: V
2n-prefetch architecture
received with data—that is, source-synchronous
data capture
operation
maximum average periodic refresh interval
compatibility
DD
DDSPD
= V
DD
DD
= +2.3V to +3.6V
Q = +2.5V
= V
R/C H (-40B)
Products and specifications discussed herein are subject to change by Micron without notice.
DD
Q = +2.6V)
1
512MB, 1GB (x72, ECC, DR) 184-Pin DDR SDRAM RDIMM
www.micron.com
1
Figure 2:
Notes: 1. Not recommended for new designs.
PCB height: 28.58mm (1.125in)
Options
• Operating temperature
• Package
• Memory clock, speed, CAS latency
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 184-pin DIMM (standard)
– 184-pin DIMM (Pb-free)
– 5.0ns (200 MHz), 400 MT/s, CL = 3
– 6.0ns (167 MHz), 333 MT/s, CL = 2.5
– 7.5ns (133 MHz), 266 MT/s, CL = 2
– 7.5ns (133 MHz), 266 MT/s, CL = 2
– 7.5ns (133 MHz), 266 MT/s, CL = 2.5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. Contact Micron for industrial temperature
3. CL = CAS (READ) latency; registered mode
module offerings.
will add one clock cycle to CL.
R/C B (-335, -262, -26A, -265)
A
A
2
≤ +85°C)
≤ +70°C)
©2004 Micron Technology, Inc. All rights reserved.
3
1
1
1
Marking
Features
None
-40B
-26A
-335
-262
-265
G
Y
I

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mt18vddf12872dg-335 Summary of contents

Page 1

... MT18VDDF6472D – 512MB MT18VDDF12872D – 1GB For component data sheets, refer to Micron’s Web site: Features • 184-pin, registered dual in-line memory module (RDIMM) • Fast data transfer rates: PC2100, PC2700, or PC3200 • 512MB (64 Meg x 72) and 1GB (128 Meg x 72) • ...

Page 2

... RCD and RP for -335 modules show 18ns to align with industry specifications; 512MB 8K 8K (A0–A12) 4 (BA0, BA1) 256Mb (32 Meg (A0–A9) 2 (S0#, S1#) 1 256Mb DDR SDRAM Module Configuration Bandwidth 64 Meg ...

Page 3

... Part Numbers and Timing Parameters – 1GB Modules Base device: MT46V64M8, Module 2 Part Number Density MT18VDDF12872DG-40B__ MT18VDDF12872DY-40B__ MT18VDDF12872DG-335__ MT18VDDF12872DY-335__ MT18VDDF12872DY-262__ MT18VDDF12872DG-26A__ MT18VDDF12872DG-265__ Notes: 1. Data sheets for the base devices can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions ...

Page 4

Pin Assignments and Descriptions Table 5: Pin Assignments 184-Pin DDR RDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQ17 47 REF 2 DQ0 25 DQS2 DQ1 ...

Page 5

... Data strobe: Output with read data. Edge-aligned with read data. Input with write data. Center-aligned with write data. Used to capture data. I/O Serial presence-detect data: SDA is a bidirectional pin used to transfer addresses and data into and out of the presence-detect portion of the module. Supply Power supply: +2.5V ±0.2V (-40B: +2.6V ±0.1V). Supply Serial EEPROM positive power supply: +2 ...

Page 6

Functional Block Diagrams Figure 3: Functional Block Diagram (-40B) RS1# RS0# DQS0 DM0 DQS1 DM1 DQS2 DM2 DQS3 DM3 DQS8 DM8 S0# S1# BA0, BA1 A0–A12 RAS# CAS# CKE0 CKE1 WE# PDF: 09005aef807eb17d/Source: 09005aef807d24c9 DDF18C64_128x72D.fm - Rev. C 1/08 EN ...

Page 7

Figure 4: Functional Block Diagram (-335, -262, -26A, -265) RS1# RS0# DQS0 DM0 DQS1 DM1 DQS2 DM2 DQS3 DM3 DQS8 DM8 S0# S1# BA0, BA1 A0–A12 RAS# CAS# CKE0 CKE1 WE# PDF: 09005aef807eb17d/Source: 09005aef807d24c9 DDF18C64_128x72D.fm - Rev. C 1/08 EN ...

Page 8

... DDR SDRAM devices on the following rising clock edge (data access is delayed by one clock cycle). A phase-lock loop (PLL) on the module receives and redrives the differ- ential clock signals (CK, CK#) to the DDR SDRAM devices. The register(s) and PLL reduce clock, control, command, and address signal loading by isolating DRAM from the system controller ...

Page 9

... Electrical Specifications Stresses greater than those listed in Table 7 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated on the device data sheet is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability ...

Page 10

... Address and control inputs change only during active READ or WRITE commands Notes: 1. Value calculated as one module rank in this operating condition; all other module ranks are Value calculated reflects all module ranks in this operating condition. PDF: 09005aef807eb17d/Source: 09005aef807d24c9 DDF18C64_128x72D ...

Page 11

... (MIN); Address and control inputs change only during active READ or WRITE commands Notes: 1. Value calculated as one module rank in this operating condition; all other module ranks are Value calculated reflects all module ranks in this operating condition. PDF: 09005aef807eb17d/Source: 09005aef807d24c9 DDF18C64_128x72D.fm - Rev. C 1/08 EN ...

Page 12

... Timing and switching specifications for the register listed above are critical for proper oper- ation of the DDR SDRAM RDIMMs. These are meant subset of the parameters for the specific device used on the module. Detailed information for this register is available in JEDEC standard JESD82. ...

Page 13

Table 12: PLL Specifications CVF857 device or equivalent JESD82-1A Parameter DC high-level input voltage DC low-level input voltage Input voltage (limits) Input differential-pair cross voltage Input differential voltage Input differential voltage Input current Dynamic supply current Dynamic supply current Dynamic ...

Page 14

Serial Presence-Detect Table 14: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input leakage current GND ...

Page 15

... U7 0.9 (0.035) R 1.02 (0.04) 6.35 (0.25) TYP TYP TYP 64.77 (2.55) TYP 120.65 (4.75) TYP Back view U19 U17 U18 U20 U21 73.28 (2.88) 15 Module Dimensions U12 U9 U10 U11 17.78 (0.70) TYP 10.0 (0.394) TYP 49.53 (1.95) Pin 92 TYP U22 U23 U24 3.8 (0.15) TYP Pin 93 TYP Micron Technology, Inc., reserves the right to change products or specifications without notice. ...

Page 16

... R 1.02 (0.04) 6.35 (0.25) TYP TYP TYP 64.77 (2.55) TYP 120.65 (4.75) TYP Back view U17 U14 U15 U18 U19 U16 73.28 (2.88) tive owners. 16 Module Dimensions U9 U10 U11 28.73 (1.131) 28.42 (1.119) 17.78 (0.70) TYP 10.0 (0.394) TYP 49.53 (1.95) Pin 92 TYP U20 U21 U22 3.8 (0.15) TYP Pin 93 TYP Micron Technology, Inc., reserves the right to change products or specifications without notice. ...

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