mt18vddf12872g-265

Manufacturer Part Numbermt18vddf12872g-265
Description512mb, 1gb X72, Ecc, Sr 184-pin Ddr Sdram Rdimm
ManufacturerMicron Semiconductor Products
mt18vddf12872g-265 datasheet
 


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DDR SDRAM RDIMM
MT18VDDF6472 – 512MB
MT18VDDF12872 – 1GB
For component data sheets, refer to Micron’s Web site:
Features
• 184-pin, registered dual in-line memory module
(RDIMM)
• Fast data transfer rates: PC2100, PC2700, or PC3200
• 512MB (64 Meg x 72) and 1GB (128 Meg x 72)
• Supports ECC error detection and correction
• V
= V
Q = +2.5V (-40B: V
DD
DD
DD
• V
= +2.3V to +3.6V
DDSPD
• 2.5V I/O (SSTL_2-compatible)
• Internal, pipelined double data rate (DDR)
2n-prefetch architecture
• Bidirectional data strobe (DQS) transmitted/
received with data—that is, source-synchronous
data capture
• Differential clock inputs (CK and CK#)
• Multiple internal device banks for concurrent
operation
• Single rank
• Selectable burst lengths (BL): 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 7.8125µs
maximum average periodic refresh interval
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum
compatibility
• Gold edge contacts
184-Pin RDIMM (MO-206) Figures
Figure 1:
R/C J (-40B)
PCB height: 28.58mm (1.125in)
PDF: 09005aef8074e85b/Source: 09005aef8072fe49
DDF18C64_128x72.fm - Rev. E 6/08 EN
Products and specifications discussed herein are subject to change by Micron without notice.
512MB, 1GB (x72, ECC, SR) 184-Pin DDR SDRAM RDIMM
1
www.micron.com
Figure 2:
PCB height: 28.58mm (1.125in)
= V
Q = +2.6V)
DD
Options
• Operating temperature
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
• Package
– 184-pin DIMM (standard)
– 184-pin DIMM (Pb-free)
• Memory clock, speed, CAS latency
– 5.0ns (200 MHz), 400 MT/s, CL = 3
– 6.0ns (167 MHz), 333 MT/s, CL = 2.5
– 7.5ns (133 MHz), 266 MT/s, CL = 2.5
Notes: 1. Not recommended for new designs.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1
R/C C (-335, -265)
2
≤ +70°C)
A
≤ +85°C)
A
3
2. Contact Micron for industrial temperature
module offerings.
3. CL = CAS (READ) latency; registered mode
will add one clock cycle to CL.
©2003 Micron Technology, Inc. All rights reserved.
Features
Marking
None
I
G
Y
-40B
-335
1
-265

mt18vddf12872g-265 Summary of contents

  • Page 1

    ... MT18VDDF6472 – 512MB MT18VDDF12872 – 1GB For component data sheets, refer to Micron’s Web site: Features • 184-pin, registered dual in-line memory module (RDIMM) • Fast data transfer rates: PC2100, PC2700, or PC3200 • 512MB (64 Meg x 72) and 1GB (128 Meg x 72) • ...

  • Page 2

    ... Density MT18VDDF12872G-40B__ MT18VDDF12872Y-40B__ MT18VDDF12872G-335__ MT18VDDF12872Y-335__ MT18VDDF12872G-265__ Notes: 1. The data sheets for the base devices can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. ...

  • Page 3

    Pin Assignments and Descriptions Table 5: Pin Assignments 184-Pin DDR RDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQ17 47 REF 2 DQ0 25 DQS2 DQ1 ...

  • Page 4

    ... Supply SSTL_2 reference voltage (V REF V Supply Ground – No connect: These pins are not connected on the module. PDF: 09005aef8074e85b/Source: 09005aef8072fe49 DDF18C64_128x72.fm - Rev. E 6/08 EN 512MB, 1GB (x72, ECC, SR) 184-Pin DDR SDRAM RDIMM Pin Assignments and Descriptions 2 C bus. /2). DD Micron Technology, Inc., reserves the right to change products or specifications without notice. ...

  • Page 5

    ... Functional Block Diagrams Figure 3: Functional Block Diagram (R/C J, -40B RS0# U6, U19 RAS# CAS# CKE0 WE# A0–A12 (512MB module) BA0, BA1 S0# CK CK# PDF: 09005aef8074e85b/Source: 09005aef8072fe49 DDF18C64_128x72.fm - Rev. E 6/08 EN 512MB, 1GB (x72, ECC, SR) 184-Pin DDR SDRAM RDIMM DQS0 DQS9 DQS CS# DM DQ4 DQ0 ...

  • Page 6

    ... Figure 4: Functional Block Diagram (R/C C, -335, -265 RS0# U7, U16 RAS# CAS# CKE0 WE# A0-A12 (512MB module) BA0, BA1 S0# CK CK# PDF: 09005aef8074e85b/Source: 09005aef8072fe49 DDF18C64_128x72.fm - Rev. E 6/08 EN 512MB, 1GB (x72, ECC, SR) 184-Pin DDR SDRAM RDIMM DQS0 DQS9 DQS CS# DM DQ4 DQ0 DQ U1 DQ5 DQ1 ...

  • Page 7

    ... DDR SDRAM devices on the following rising clock edge (data access is delayed by one clock cycle). A phase-lock loop (PLL) on the module receives and redrives the differ- ential clock signals (CK, CK#) to the DDR SDRAM devices. The register(s) and PLL reduce control, command, address, and clock signals loading by isolating DRAM from the system controller ...

  • Page 8

    ... Electrical Specifications Stresses greater than those listed in Table 7 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated on the device data sheet is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability ...

  • Page 9

    I Specifications DD Table 9: I Specifications and Conditions – 512MB DD Values are shown for the MT46V64M4 DDR SDRAM only and are computed from values specified in the 256Mb (64 Meg x4) component data sheet Parameter/Condition Operating one bank ...

  • Page 10

    Table 10: I Specifications and Conditions – 1GB DD Values are shown for the MT46V128M4 DDR SDRAM only and are computed from values specified in the 512Mb (128 Meg x 4) component data sheet Parameter/Condition Operating one bank active-precharge current: ...

  • Page 11

    ... Timing and switching specifications for the register listed above are critical for proper oper- ation of the DDR SDRAM RDIMMs. These are meant subset of the parameters for the specific device used on the module. Detailed information for this register is available in JEDEC Standard JESD82. ...

  • Page 12

    Table 12: PLL Specifications CVF857 device or equivalent JESD82-1A Parameter DC high-level input voltage DC low-level input voltage Input voltage (limits) Input differential-pair cross voltage Input differential voltage Input differential voltage Input current Dynamic supply current Dynamic supply current Dynamic ...

  • Page 13

    Serial Presence-Detect Table 14: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input leakage current GND ...

  • Page 14

    ... U8 U7 0.9 (0.035) R 1.02 (0.04) 6.35 (0.25) TYP TYP TYP 120.65 (4.75) TYP Back view U19 U18 U20 U21 73.3 (2.88) TYP Micron Technology, Inc., reserves the right to change products or specifications without notice. 14 Module Dimensions U12 U9 U10 U11 28.73 (1.131) 28.42 (1.119) 17.78 (0.7) TYP 10.0 (0.39) TYP Pin 92 49.53 (1.95) TYP U22 U23 U24 3.8 (0.15) TYP Pin 93 © ...

  • Page 15

    ... TYP TYP TYP 120.65 (4.750) TYP Back view U17 U15 U18 U19 U16 73.3 (2.88) TYP tive owners. Micron Technology, Inc., reserves the right to change products or specifications without notice. 15 Module Dimensions U9 U10 U11 28.73 (1.131) 28.42 (1.119) 17.78 (0.7) TYP 10.0 (0.39) TYP Pin 92 49.53 (1.95) TYP U20 U21 U22 3 ...