mt18vddf12872hg-265 Micron Semiconductor Products, mt18vddf12872hg-265 Datasheet

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mt18vddf12872hg-265

Manufacturer Part Number
mt18vddf12872hg-265
Description
1gb X72, Ecc, Dr 200-pin Ddr Sdram Sodimm
Manufacturer
Micron Semiconductor Products
Datasheet
DDR SDRAM SODIMM
MT18VDDF12872H – 1GB
For component data sheets, refer to Micron’s Web site:
Features
• 200-pin, small-outline dual in-line memory module
• Fast data transfer rates: PC2100, PC2700, or PC3200
• 1GB (128 Meg x 72)
• Supports ECC error detection and correction
• V
• V
• 2.5V I/O (SSTL_2-compatible)
• Internal, pipelined double data rate (DDR)
• Bidirectional data strobe (DQS) transmitted/
• Differential clock inputs (CK and CK#)
• Multiple internal device banks for concurrent
• Selectable burst lengths (BL) 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 7.8125µs
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum
• Dual rank
• Gold edge contacts
Table 1:
PDF: 09005aef80e4880c/Source: 09005aef80e487d7
DDF18C128x72H.fm - Rev. B 10/07 EN
(SODIMM)
(-40B: V
architecture; two data accesses per clock cycle
received with data—that is, source-synchronous
data capture
operation
maximum average periodic refresh interval
compatibility
DD
DDSPD
Speed
Grade
-26A
-40B
-335
-265
= V
DD
DD
= +2.3V to +3.6V
Q = +2.5V
= V
Key Timing Parameters
Products and specifications discussed herein are subject to change by Micron without notice.
DD
Nomenclature
Q = +2.6V)
Industry
PC3200
PC2700
PC2100
PC2100
CL = 3
400
Data Rate (MT/s)
www.micron.com
1GB (x72, ECC, DR) 200-Pin DDR SDRAM SODIMM
CL = 2.5
333
333
266
266
1
Figure 1:
Notes: 1. Contact Micron for industrial temperature
Options
• Operating temperature
• Package
• Memory clock, speed, CAS latency
PCB height: 31.75mm (1.25in)
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 200-pin DIMM (standard)
– 200-pin DIMM (Pb-free)
– 5.0ns (200 MHz), 400 MT/s, CL = 3
– 6.0ns (167 MHz), 333 MT/s, CL = 2.5
– 7.5ns (133 MHz), 266 MT/s, CL = 2
– 7.5ns (133 MHz), 266 MT/s, CL = 2.5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CL = 2
2. Not recommended for new designs.
266
266
266
200
module offerings.
200-Pin SODIMM (MO-224)
t
(ns)
RCD
15
18
20
20
A
A
1
≤ +85°C)
≤ +70°C)
©2004 Micron Technology, Inc. All rights reserved.
(ns)
t
15
18
20
20
RP
2
2
Marking
Features
None
-40B
-26A
-335
-265
(ns)
t
55
60
65
65
RC
G
Y
I

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mt18vddf12872hg-265 Summary of contents

Page 1

... DDR SDRAM SODIMM MT18VDDF12872H – 1GB For component data sheets, refer to Micron’s Web site: Features • 200-pin, small-outline dual in-line memory module (SODIMM) • Fast data transfer rates: PC2100, PC2700, or PC3200 • 1GB (128 Meg x 72) • Supports ECC error detection and correction • ...

Page 2

... MT18VDDF12872HG-40B__ MT18VDDF12872HY-40B__ MT18VDDF12872HG-335__ MT18VDDF12872HY-335__ MT18VDDF12872HG-26A__ MT18VDDF12872HG-265__ Notes: 1. Data sheet for the base device can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT18VDDF12872HY-335F1. ...

Page 3

Pin Assignments and Descriptions Table 4: Pin Assignments 200-Pin SODIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol 101 REF DQ19 103 SS 5 DQ0 55 DQ24 105 7 DQ1 57 ...

Page 4

... Data strobe: Output with read data, input with write data. DQS is edge- aligned with read data, center-aligned with write data. Used to capture data. I/O Serial presence-detect data: SDA is a bidirectional pin used to transfer addresses and data into and out of the presence-detect portion of the module. Supply Power supply: +2.5V ±0.2V (-40B: +2.6V ±0.1V). Supply Serial EEPROM positive power supply: +2 ...

Page 5

Functional Block Diagram Figure 2: Functional Block Diagram S1# S0# DQS0 DM0 DM CS# DQS DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQ4 DQ DQ5 DQ DQ6 DQ DQ7 DQ DQS2 DM2 DM CS# DQS DQ16 DQ DQ17 DQ ...

Page 6

... DDR SDRAM modules incorporate serial presence-detect (SPD). The SPD function is implemented using a 2,048-bit EEPROM. This nonvolatile storage device contains 256 bytes. The first 128 bytes are programmed by Micron to identify the module type and various SDRAM organizations and timing parameters. The remaining 128 bytes of storage are available for use by the customer ...

Page 7

... Electrical Specifications Stresses greater than those listed in Table 6 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated on the device data sheet is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability ...

Page 8

... (MIN); Address and control inputs change only during active READ or WRITE commands Notes: 1. Value calculated as one module rank in this operating condition; all other module ranks are Value calculated reflects all module ranks in this operating condition. PDF: 09005aef80e4880c/Source: 09005aef80e487d7 DDF18C128x72H.fm - Rev. B 10/07 EN ...

Page 9

Serial Presence-Detect Table 9: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input leakage current GND ...

Page 10

... U14 U16 U17 U18 U19 ® their respective owners. characterization sometimes occur. Micron Technology, Inc., reserves the right to change products or specifications without notice. 10 Module Dimensions U10 31.9 (1.256) 31.6 (1.244) 20.0 (0.787) TYP 1.1 (0.043) 0.9 (0.035) Pin 199 Pin 2 ©2004 Micron Technology, Inc. All rights reserved. ...

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