mt16lsdf6464hy-13e Micron Semiconductor Products, mt16lsdf6464hy-13e Datasheet

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mt16lsdf6464hy-13e

Manufacturer Part Number
mt16lsdf6464hy-13e
Description
256mb, 512mb X64, Dr 144-pin Sdram Sodimm
Manufacturer
Micron Semiconductor Products
Datasheet
SMALL-OUTLINE
SDRAM MODULE
Features
• PC100- and PC133-compliant, 144-pin, small-
• Utilizes 100 MHz and 133 MHz SDRAM components
• Unbuffered
• 256MB (32 Meg x 64) and 512MB (64 Meg x 64)
• Single +3.3V power supply
• Fully synchronous; all signals registered on positive
• Internal pipelined operation; column address can
• Internal SDRAM banks for hiding row access/
• Programmable burst lengths: 1, 2, 4, 8, or full page
• Auto precharge and auto refresh modes
• Self refresh mode: standard and low-power
• 256MB module: 64ms, 4,096-cycle refresh (15.625µs
• LVTTL-compatible inputs and outputs
• Serial presence-detect (SPD)
• Gold edge connectors
Table 1:
CL = CAS (READ) latency
Table 2:
pdf: 09005aef807924d2, source: 09005aef807924f1
SDF16C32_64x64HG.fm - Rev. E 4/06 EN
MARKING
Refresh count
Device banks
Device configuration
Row addressing
Column addressing
Module ranks
MODULE
outline, dual in-line memory module (SODIMM)
edge of system clock
be changed every clock cycle
precharge
refresh interval); 512MB: 64ms, 8,192-cycle refresh
(7.81µs refresh interval)
-13E
-133
-10E
FREQUENCY
133 MHz
133 MHz
100 MHz
CLOCK
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
Timing Parameters
Address Table
CL = 2
ACCESS TIME
5.4ns
6ns
CL = 3
5.4ns
SETUP
TIME
1.5ns
1.5ns
2ns
HOLD
TIME
0.8ns
0.8ns
1ns
128Mb (16 Meg x 8)
1
4 (BA0, BA1)
4K (A0–A11)
NOTE:
2 (S0#, S1#)
MT16LSDF3264(L)H – 256MB
MT16LSDF6464(L)H – 512MB
For the latest data sheet, please refer to the Micron
site:
Options
• Self refresh current
• Package
• Memory Clock/CL
• PCB
1K (A0–A9)
PCB height: 1.25in (31.75mm)
256MB
Figure 1: 144-Pin SODIMM (MO-190)
Standard
Low power
144-pin SODIMM (standard)
144-pin SODIMM (lead-free)
7.5ns (133 MHz)/CL = 2
7.5ns (133 MHz)/CL = 3
10ns (100 MHz)/CL = 2
Height 1.25in (31.75mm)
4K
www.micron.com/products/modules
1. Contact Micron for product availability.
144-PIN SDRAM SODIMM
256MB, 512MB (x64, DR)
©2006 Micron Technology, Inc. All rights reserved.
256Mb (32 Meg x 8)
4 (BA0, BA1)
8K (A0–A12)
2 (S0#, S1#))
1K (A0–A9)
512MB
8K
See page 2 note
Marking
None
-13E
-10E
-133
L
Y
G
1
1
®
Web

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mt16lsdf6464hy-13e Summary of contents

Page 1

... Programmable burst lengths full page • Auto precharge and auto refresh modes • Self refresh mode: standard and low-power • 256MB module: 64ms, 4,096-cycle refresh (15.625µs refresh interval); 512MB: 64ms, 8,192-cycle refresh (7.81µs refresh interval) • LVTTL-compatible inputs and outputs • ...

Page 2

... The designators for component and PCB revision are the last two characters of each part number Consult factory for current revision codes. Example: MT16LSDF32264(L)HG-133B1. pdf: 09005aef807924d2, source: 09005aef807924f1 SDF16C32_64x64HG.fm - Rev. E 4/06 EN 256MB, 512MB (x64, DR) 144-PIN SDRAM SODIMM MODULE DENSITY CONFIGURATION 256MB 32 Meg x 64 256MB 32 Meg x 64 ...

Page 3

... A2 69 S0# 105 S1# 107 SS NOTE: 1. Pin Connect for 256MB modules, or A12 for 512MB modules. Figure 2: Pin Locations (144-Pin SODIMM) Front View PIN 1 (all odd pins) pdf: 09005aef807924d2, source: 09005aef807924f1 SDF16C32_64x64HG.fm - Rev. E 4/06 EN Table 5: PIN SYMBOL PIN SYMBOL PIN SYMBOL PIN SYMBOL ...

Page 4

... The address inputs also provide the op-code during a MODE REGISTER SET command. SCL Input Serial clock for presence-detect: scl is used to synchronize the presence-detect data transfer to and from the module. SDA Input/ Serial presence-detect data: sda is a bidirectional pin used to Output transfer addresses and data into and data out of the presence- detect portion of the module. DQ0– ...

Page 5

Table 6: Pin Descriptions (Continued) Pin numbers may not correlate with symbols; refer to the Pin Assignment tables on page 3 for more information PIN NUMBERS 11, 12, 27, 28, 45, 46, 63, 64, 81, 82, 101, 102, 113, 114, ...

Page 6

... CKE0 CKE1 (U9–U16) CKE1 NOTE: 1. All resistor values are 10Ω unless otherwise specified. 2. Per industry standard, Micron utilizes various component speed grades as referenced in the module part numbering guide at support/numbering.html. pdf: 09005aef807924d2, source: 09005aef807924f1 SDF16C32_64x64HG.fm - Rev. E 4/06 EN Figure 3: Functional Block Diagram DQMB4 ...

Page 7

... The SPD function is implemented using a 2,048-bit EEPROM. This nonvolatile storage device contains 256 bytes. The first 128 bytes are programmed by Micron to identify the module type, SDRAM charac- teristics and module timing parameters. The remain- ing 128 bytes of storage are available for use by the customer ...

Page 8

... Reserved Mode CAS Latency BT *Should program M11 and M10 = “0, 0” to ensure compatibility with future devices. 512MB Module A12 A11 A10 Reserved Mode CAS Latency BT ...

Page 9

... Cn… NOTE: 1. For full-page accesses 1,024 (both 256MB and 512MB modules) 2. For a burst length of two, A1–A9 select the block-of- two burst; A0 selects the starting column within the block. 3. For a burst length of four, A2–A9 select the block-of- four burst; A0–A1 select the starting column within the block. 4. For a burst length of eight, A3– ...

Page 10

Operating Mode The normal operating mode is selected by setting M7 and M8 to zero; the other combinations of values for M7 and M8 are reserved for future use and/or test modes. The programmed burst length applies to both READ ...

Page 11

Commands The Truth Table provides a quick reference of avail- able commands. This is followed by written descrip- tion of each command. For a more detailed Table 9: Truth Table – SDRAM Commands and DQMB Operation CKE is HIGH for ...

Page 12

... Auto refresh current CKE = HIGH HIGH Self refresh current: CKE ≤ 0. Value calculated as one module rank in this operating condition, and all other ranks in power-down mode Value calculated reflects all module ranks in this operation condition. pdf: 09005aef807924d2, source: 09005aef807924f1 SDF16C32_64x64HG.fm - Rev. E 4/06 EN tional sections of this specification is not implied ...

Page 13

... WRITE; All device banks active Auto refresh current CKE = HIGH HIGH Self refresh current: CKE < 0. Value calculated as one module rank in this operating condition, and all other ranks in power-down mode Value calculated reflects all module ranks in this operation condition. Table 13: Capacitance Note 2; notes appear on page 16 ...

Page 14

Table 14: Electrical Characteristics and Recommended AC Operating Conditions Notes 11, 31; notes appear on page 16; comply with PC100 and PC133 specifications, based on SDRAM device AC CHARACTERISTICS PARAMETER Access time from ...

Page 15

Table 15: AC Functional Characteristics Notes 11, 31; notes appear on page 16; comply with PC100 and PC133 specifications, based on SDRAM device PARAMETER READ/WRITE command to READ/WRITE command CKE to clock disable or power-down ...

Page 16

... Refer to device data sheet for timing waveforms. 32. The value of ule SPDs is calculated from 33. Leakage number reflects the worst case leakage t CKS; clock(s) speci- possible through the module pin, not what each memory device contributes plus RP; clock(s) 16 256MB, 512MB (x64, DR) ...

Page 17

SPD Clock and Data Conventions Data states on the SDA line can change only during SCL LOW. SDA state changes during SCL HIGH are reserved for indicating start and stop conditions (see Figures 6, and 7). SPD Start Condition All ...

Page 18

Table 16: EEPROM Device Select Code Most significant bit (b7) is sent first Memory area select code (two arrays) Protection register select code Table 17: EEPROM Operating Modes MODE Current address READ Random address READ Sequential READ Byte WRITE Page ...

Page 19

Table 18: Serial Presence-Detect EEPROM DC Operating Conditions All voltages referenced DDSPD PARAMETER/CONDITION Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA ...

Page 20

... Number of bytes used by Micron 1 Total number of SPD memory bytes 2 Memory type 3 Number of row addresses 4 Number of column addresses 5 Number of banks 6 Module data width 7 Module data width (continued) 8 Module voltage interface levels 9 t SDRAM cycle time SDRAM access from clock, ( Module configuration type 12 ...

Page 21

... Module serial number 99–125 Manufacturer-specific data (RSVD) 126 System frequency 127 SDRAM component and clock detail NOTE The value of RAS used for the -13E module is calculated from pdf: 09005aef807924d2, source: 09005aef807924f1 SDF16C32_64x64HG.fm - Rev +3.3V ±0.3V DD ENTRY (VERSION) 128MB or 256MB 1.5ns (-13E/-133) t ...

Page 22

Figure 10: 144-Pin SODIMM Dimensions U1 0.079 (2.00) R (2X) 0.071 (1.80) U3 (2X) 0.236 (6.00) 0.100 (2.55) 0.079 (2.00) PIN 1 83.82 (3.30) U10 U16 PIN 144 NOTE: All dimensions in inches (millimeters); Data Sheet Designation Released (No Mark): ...

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