hys64t128020hm-5-a Infineon Technologies Corporation, hys64t128020hm-5-a Datasheet - Page 19

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hys64t128020hm-5-a

Manufacturer Part Number
hys64t128020hm-5-a
Description
214-pin Micro-dimm-ddr2-sdram Modules
Manufacturer
Infineon Technologies Corporation
Datasheet
Table 12
Parameter
Address and control input hold time
Address and control input pulse
width
(each input)
Address and control input setup
time
DQ low-impedance time from CK /
CK
DQS low-impedance from CK / CK
Mode register set command cycle
time
OCD drive mode output delay
Data output hold time from DQS
Data hold skew factor
Average periodic refresh Interval
Auto-Refresh to Active/Auto-
Refresh command period
Precharge-All (8 banks) command
period
Read preamble
Read postamble
Active bank A to Active bank B
command period
Internal Read to Precharge
command delay
Write preamble
Write postamble
Write recovery time for write
without Auto-Precharge
Write recovery time for write with
Auto-Precharge
Internal Write to Read command
delay
Exit power down to any valid
command
(other than NOP or Deselect)
Exit active power-down mode to
Read command (slow exit, lower
power)
Data Sheet
Timing Parameter by Speed Grade - DDR2-400 & DDR2-533 (cont’d)
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
WR
t
t
t
IH
IPW
IS
LZ(DQ)
LZ(DQS)
MRD
OIT
QH
QHS
REFI
RFC
RP
RPRE
RPST
RRD
RTP
WPRE
WPST
WR
WTR
XARD
XARDS
(base)
(base)
DDR2–533
Min.
375
0.6
250
2
t
2
0
t
127.5
15 + 1
0.9
0.40
7.5
10
7.5
0.35x
0.40
15
t
7.5
2
6 – AL
AC.MIN
HP
WR
/
t
t
AC.MIN
CK
t
t
QHS
CK
t
CK
19
Max.
t
t
12
400
7.8
3.9
1.1
0.60
0.60
AC.MAX
AC.MAX
Micro-DIMM DDR2 SDRAM Modules
DDR2–400
Min.
475
0.6
350
2
t
2
0
t
127.5
15 + 1
0.9
0.40
7.5
10
7.5
0.35x
0.40
15
t
10
2
6 – AL
AC.MIN
HPQ
WR
HYS64T128020HM–[3.7/5]–A
/
t
t
AC.MIN
CK
t
CK
t
t
CK
QHS
Electrical Characteristics
Max.
t
t
12
450
7.8
3.9
1.1
0.60
0.60
AC.MAX
AC.MAX
04132004-S0LP-CL4Q
Rev. 1.2, 2005-08
Unit Note
ps
t
ps
ps
ps
t
ns
ps
ns
ns
t
t
ns
ns
ns
t
t
ns
t
ns
t
t
CK
CK
CK
CK
CK
CK
CK
CK
CK
s
s
2)3)4)5)6)
7)
9)
1)

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