ace2301 ACE Technology Co., LTD., ace2301 Datasheet

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ace2301

Manufacturer Part Number
ace2301
Description
P-channel Enhancement Mode Mosfet
Manufacturer
ACE Technology Co., LTD.
Datasheet
Note: 1.Repetitive Rating: Pulse width limited by the maximum junction temperature.
Description
using high cell density, DMOS trench technology.
computer power management and Battery powered circuits, and low in-line power loss are needed in a
very small outline surface mount package.
Features
Absolute Maximum Ratings
Junction to Ambient Thermal Resistance (PCB mounted)
The ACE2301 is the P-Channel logic enhancement mode power field effect transistor are produced
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
V
R
R
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
2.1-in
3.Guaranteed by design; not subject to production testing.
DS
DS(ON)
DS(ON)
=-20V
Maximum Power Dissipation
2
2oz Cu PCB board.
,V
,V
Operating Junction Temperature
gs
gs
@-4.5V,I
@-2.5V,I
Storage Temperature Range
Continuous Drain Current
Pulsed Drain Current
Drain-Source Voltage
Gate-Source Voltage
Parameter
ds
ds
@-2.8A=100mΩ
@-2.0A=150mΩ
Technology
1)
T
T
P-Channel Enhancement Mode MOSFET
A
A
=25℃
=70℃
2)
Symbol
T
R
V
V
I
P
T
I
DM
STG
θ
DS
GS
D
D
J
JA
-55 to 150
-55 to 150
Max
1.25
-2.2
±12
140
-20
0.8
-8
O
Unit
C/W
O
O
W
V
V
A
A
C
C
ACE2301
VER 1.2
1

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ace2301 Summary of contents

Page 1

... Description The ACE2301 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package ...

Page 2

... Packaging Type SOT-23 Ordering information Selection Guide ACE2301 Halogen - free Pb - free BM : SOT-23-3 Technology P-Channel Enhancement Mode MOSFET Pin Symbol Description 1 G Gate 2 S Source 3 D Drain ACE2301 VER 1.2 2 ...

Page 3

... Min. Typ. =0V, I =250uA -20 D =-4.5V, I =-2.8A 70.0 D =-2.5V, I =-2.0A 85.0 D =250uA -0.4 D =-9.6V, V =0V GS =±8V, V =0V DS =-5V, I =-2.8A 6.5 D 5.8 =-6V, I =-2.8A D 0.85 V =-4.5V GS 1.7 13 =-6V,RL=6Ω 36 =-4.5V GEN 42 R =6Ω 415 223 F=1.0MHz 87 =0V GS ACE2301 Max. Unit V 100.0 mΩ 150.0 -0 ±100 -1.6 A -1.2 V VER 1.2 3 ...

Page 4

... Packing Information SOT-23-3 Technology P-Channel Enhancement Mode MOSFET ACE2301 VER 1.2 4 ...

Page 5

... A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system affect its safety or effectiveness. Technology P-Channel Enhancement Mode MOSFET Notes ACE Technology Co., LTD. http://www.ace-ele.com/ ACE2301 VER 1.2 5 ...

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