ace2302 ACE Technology Co., LTD., ace2302 Datasheet

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ace2302

Manufacturer Part Number
ace2302
Description
N-channel Enhancement Mode Mosfet
Manufacturer
ACE Technology Co., LTD.
Datasheet
 
                                                                                                                                                                           
                                             
Description
using high cell density, DMOS trench technology.
computer power management and Battery powered circuits, and low in-line power loss are needed in a
very small outline surface mount package.
Features
Application
Absolute Maximum Ratings
Continuous Source Current (Diode Conduction)
Continuous Drain Current (T
The ACE2302 is the N-Channel logic enhancement mode power field effect transistors are produced
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
20V/3.6A, R
20V/3.1A, R
Super high density cell design for extremely low R
Exceptional on-resistance and maximum DC current capability
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
Thermal Resistance-Junction to Ambient
Operating Junction Temperature
Storage Temperature Range
Power Dissipation
Drain-Source Voltage
Pulsed Drain Current
Gate-Source Voltage
DS(ON)
DS(ON)
Parameter
=80mΩ@V
=95mΩ@V
Technology
J
=150℃)
GS
GS
=4.5V
=2.5V
T
T
T
T
A
A
A
A
=25℃
=70℃
=25℃
=70℃
Symbol Max
N-Channel Enhancement Mode MOSFET
V
V
T
R
I
P
T
GSS
I
DM
I
STG
DSS
θJA
D
S
D
J
DS(ON)
-55/150
1.25
±20
150
100
3.2
2.6
1.6
0.8
20
10
O
Unit
C/W
O
O
W
V
V
A
A
A
C
C
ACE2302
VER 1.2

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ace2302 Summary of contents

Page 1

... Description The ACE2302 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. ...

Page 2

... Packaging Type SOT-23-3 3 Pin Symbol Description Ordering information Selection Guide ACE2302 Halogen - free Pb - free BM : SOT-23-3 Electrical Characteristics T =25 , unless otherw ise noted ℃ A Parameter Drain-Source Breakdown ...

Page 3

... Ciss Coss V =10V Crss td(on =10V, R =5.5Ω td(off) tf Transfer Characteristics V Capacitance V =0V GS =4.5V, I =3.6A D =0V, f=1MHz GS =3.6A, V =4.5V, D GEN =6Ω G -Gate-to-Source Voltage (V) GS -Drain-to-Source Voltage (V) DS ACE2302 0.85 1.2 V 5.4 10 0.65 nC 1.4 340 115 VER 1.2 3 ...

Page 4

... Gate Charge (nC) g Source-Drain Diode Forward Voltage V -Source-to-Drain Voltage (V) SD Threshold Voltage T -Temperature(℃) J Technology N-Channel Enhancement Mode MOSFET On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage T -Junction Temperature (℃ -Gate-to-Source Voltage (V) GS Single Pulse Power Time (sec) ACE2302 VER 1.2 4 ...

Page 5

... Normalized Thermal Transient Impedance, Junction-to-Ambient Technology N-Channel Enhancement Mode MOSFET Square Wave Pulse Duration (sec) ACE2302 VER 1.2 5 ...

Page 6

... Packing Information SOT-23-3 Technology N-Channel Enhancement Mode MOSFET ACE2302 VER 1.2 6 ...

Page 7

... A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system affect its safety or effectiveness. Technology N-Channel Enhancement Mode MOSFET Notes ACE Technology Co., LTD. http://www.ace-ele.com/ ACE2302 VER 1.2 7 ...

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