ace2304 ACE Technology Co., LTD., ace2304 Datasheet

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ace2304

Manufacturer Part Number
ace2304
Description
N-channel Enhancement Mode Mosfet
Manufacturer
ACE Technology Co., LTD.
Datasheet
Description
using high cell density, DMOS trench technology.
computer power management and Battery powered circuits, and low in-line power loss are needed in a
very small outline surface mount package.
Features
Application
Absolute Maximum Ratings
Continuous Source Current (Diode Conduction)
Continuous Drain Current (T
The ACE2304 is the N-Channel logic enhancement mode power field effect transistor are produced
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
30V/3.2A, R
30V/2.0A, R
Super high density cell design for extremely low R
Exceptional on-resistance and maximum DC current capability
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
Thermal Resistance-Junction to Ambient
Operating Junction Temperature
Storage Temperature Range
Power Dissipation
Drain-Source Voltage
Pulsed Drain Current
Gate-Source Voltage
DS(ON)
DS(ON)
Parameter
=65mΩ@V
=90mΩ@VGS=4.5V
Technology
J
=150℃)
GS
=10V
T
T
T
T
A
A
A
A
=25℃
=70℃
=25℃
=70℃
Symbol Max
N-Channel Enhancement Mode MOSFET
V
V
T
R
I
P
T
GSS
I
DM
I
STG
DSS
θJA
D
S
D
J
DS(ON)
-55/150
1.25
1.25
±20
150
100
3.2
2.6
0.8
30
10
O
Unit
C/W
O
O
W
V
V
A
A
A
C
C
ACE2304
VER 1.2
1

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ace2304 Summary of contents

Page 1

... Description The ACE2304 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package ...

Page 2

... Packaging Type SOT-23-3 3 Pin Symbol Description Ordering information Selection Guide ACE2304 free BM : SOT-23-3 Electrical Characteristics T =25 , unless otherwise noted ℃ A Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current ...

Page 3

... Ciss Coss V =15V Crss td(on =15R =15 td(off) tf Transfer Characteristics Capacitance =10V =0V, f=1MHz GS =1.0A, V =10, D GEN R =6Ω -Gate-to-Source Voltage ( -Drain-to-Source Voltage (V) DS ACE2304 4.5 10 0.8 nC 1.0 240 110 VER 1.2 3 ...

Page 4

... Gate Charge (nC) g Source-Drain Diode Forward Voltage V -Source-to-Drain Voltage (V) SD Threshold Voltage T -Temperature(℃) J N-Channel Enhancement Mode MOSFET On-Resistance vs. Junction Temperature T -Junction Temperature (℃) J On-Resistance vs. Gate-to-Source Voltage V -Gate-to-Source Voltage (V) GS Single Pulse Power Time (sec) ACE2304 VER 1.2 4 ...

Page 5

... Technology Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) N-Channel Enhancement Mode MOSFET ACE2304 VER 1.2 5 ...

Page 6

... Packing Information SOT-23-3 Technology N-Channel Enhancement Mode MOSFET ACE2304 VER 1.2 6 ...

Page 7

... A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system affect its safety or effectiveness. Technology N-Channel Enhancement Mode MOSFET Notes ACE Technology Co., LTD. http://www.ace-ele.com/ ACE2304 VER 1.2 7 ...

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