ace2341 ACE Technology Co., LTD., ace2341 Datasheet

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ace2341

Manufacturer Part Number
ace2341
Description
P-channel Enhancement Mode Mosfet
Manufacturer
ACE Technology Co., LTD.
Datasheet
Description
using high cell density, DMOS trench technology.
computer power management and Battery powered circuits, and low in-line power loss are needed in a
very small outline surface mount package.
Features
Application
Absolute Maximum Ratings
(TA=25℃ Unless otherwise noted)
Continuous Source Current (Diode Conduction)
Continuous Drain Current (T
The ACE2341 is the P-Channel logic enhancement mode power field effect transistors are produced
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
-20V/-3.3A, R
-20V/-2.8A, R
-20V/-2.3A, R
Super high density cell design for extremely low R
Exceptional on-resistance and maximum DC current capability
SOT-23-3L package design
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
Thermal Resistance-Junction to Ambient
Operating Junction Temperature
Storage Temperature Range
Power Dissipation
Drain-Source Voltage
Pulsed Drain Current
Gate-Source Voltage
DS(ON)
DS(ON)
DS(ON)
Parameter
=45mΩ@V
= 55mΩ@V
= 65mΩ@V
Technology
J
=150℃)
GS
GS
GS
=-4.5V
=-1.8V
=-2.5V
T
T
T
T
A
A
A
A
=25℃
=70℃
=25℃
=70℃
P-Channel Enhancement Mode MOSFET
Symbol Typical Unit
V
V
R
T
I
P
T
GSS
I
DM
I
STG
DSS
θ
D
S
D
J
JA
DS(ON)
-55/150 ℃
-55/150 ℃
1.25
-4.0
-2.8
-1.0
±12
140
-20
-12
0.8
℃/W
W
V
V
A
A
A
ACE2341
VER 1.2
1

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ace2341 Summary of contents

Page 1

... Description The ACE2341 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package ...

Page 2

... Packaging Type SOT-23 Ordering information Selection Guide ACE2341 Halogen - free Pb - free BM: SOT-23-3 Technology P-Channel Enhancement Mode MOSFET Pin Description Gate Source Drain ACE2341 VER 1.2 2 ...

Page 3

... GS =0V GS =0V T =55℃ =-4. =-3.3A 0.036 0.045 D =-2.8A 0.045 0.055 D =-2.3A 0.055 0.065 D =-3.3A D =0V GS =-4.5V, GS ≣-3.3A =0V, GS f=1MHz =6Ω L =-4.5V GEN R =6Ω G ACE2341 Typ Max. Unit V -0.9 ±100 -10 A Ω -0.8 -1 1.2 2.2 700 160 pF 120 VER 1.2 ...

Page 4

... Typical Characteristics Output Characteristics V – Drain to Source Voltage (V) DS On-Resistance vs. Drain Current I – Drain Current (A) D Technology P-Channel Enhancement Mode MOSFET V Transfer Characteristics – Gate to Source Voltage (V) GS Capacitance V – Drain to Source Voltage (V) DS ACE2341 VER 1.2 4 ...

Page 5

... Typical Characteristics Gate Charge O Total Gate Charge (nC) g Source-Drain Diode Forward Voltage V Source to Drain Voltage (V) SD Technology P-Channel Enhancement Mode MOSFET Normalized On-Resistance vs. Junction Temperature T – Junction Temperature (℃) J On-Resistance vs. Gate-to-Source Voltage V – Gate to Source Voltage (V) GS ACE2341 VER 1.2 5 ...

Page 6

... Technology Typical Characteristics Threshold Voltage T – Temperature J Normalized Thermal Transient Impedance, Junction-to-Ambient P-Channel Enhancement Mode MOSFET Single Pulse Power Square Wave Pulse Duration(sec) ACE2341 Time(sec) VER 1.2 6 ...

Page 7

... Packing Information SOT-23-3 Technology P-Channel Enhancement Mode MOSFET ACE2341 VER 1.2 7 ...

Page 8

... A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system affect its safety or effectiveness. Technology P-Channel Enhancement Mode MOSFET Notes ACE Technology Co., LTD. http://www.ace-ele.com/ ACE2341 VER 1.2 8 ...

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