bsp322 Infineon Technologies Corporation, bsp322 Datasheet
bsp322
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bsp322 Summary of contents
Page 1
... =25 °C D,pulse C =25 Ω =- =25 °C tot stg JESD22-A114-HBM page 1 BSP322P -100 V 800 mΩ PG-SOT-223 Lead free Packing Yes Non dry Value Unit ±20 V 1.8 W -55 ... 150 °C 1A (250V to 500V) 260 ° ...
Page 2
... GSS =- =-1 A DS(on =-4 =-0. |>2 DS(on)max =-0 (one layer, 70 µm thick) copper area for drain page 2 BSP322P Values Unit min. typ. max 115 K -100 - - V -2.0 -1.5 -1.0 - -0.1 -1 µA - -10 -100 - -10 -100 nA - 600 800 mΩ ...
Page 3
... - plateau =25 ° S,pulse =- =25 ° = =| /dt =100 A/µ page 3 BSP322P Values min. typ. max. - 280 372 - 4.6 6.9 - 4.3 6 Ω 21.2 31.8 - 8.3 12.5 - 0.8 1.0 - 4.3 6.4 - 12.4 16 ...
Page 4
... A 4 Max. transient thermal impedance Z =f(t thJC p parameter 100 µ 100 [V] DS page 4 BSP322P |≥ 120 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] ...
Page 5
... Typ. drain-source on resistance R =f(I DS(on) parameter 1.4 1.2 1 0.8 0.6 0 Typ. forward transconductance g =f 125 °C 25 ° [V] GS page 5 BSP322P ); T =25 ° -3 [A] D =25 ° [ - 2009-02-17 ...
Page 6
... Forward characteristics of reverse diode I =f parameter Ciss 1 Coss 0.1 Crss 0. 100 0 [V] DS page 6 BSP322P ); =-380 µ max. typ. min. - 100 140 T [° °C, typ 150 °C, typ 150 °C, 98% 25 °C, 98% ...
Page 7
... AV 16 Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 BSP322P ); I =-1 A pulsed gate [nC] gate ate 2009-02-17 ...
Page 8
... Package Outline: PG-SOT-223 Footprint: Dimensions in mm Rev 1.03 Packaging: page 8 BSP322P 2009-02-17 ...
Page 9
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev 1.03 page 9 BSP322P 2009-02-17 ...