ta4014fe TOSHIBA Semiconductor CORPORATION, ta4014fe Datasheet
ta4014fe
Manufacturer Part Number
ta4014fe
Description
Ta4014fe Use For Crystal Oscillators
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TA4014FE.pdf
(4 pages)
TA4014FE Use for Crystal Oscillators
Features
•
•
Absolute Maximum Ratings
Electrical Characteristics
Bias resistors, a transistor for oscillation and a transistor for
buffer are packed in one package; hence, TA4014FE can easily
compose a crystal oscillator.
TA4014FE comes with a 6-pin thin ultra-compact package
(1.6 mm × 1.6 mm) and is suitable for super-high density
mounting.
Power supply voltage
Circuit current
Total power dissipation
Junction temperature
Storage temperature
Note:
Note 1: When mounted on the glass epoxy board of 2.5 cm2 × 1.6 t.
Circuit current
Oscillator base voltage
Oscillator emitter voltage
Buffer base voltage
Fout voltage
R1 resistance
R2 resistance
R3 resistance
R4 resistance
R5 resistance
Characteristics
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
Characteristics
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
Symbol
V
T
I
P
CC
T
CC
stg
(Ta = 25°C)
(Note 1)
D
j
(Ta = 25°C)
Symbol
Symbol
V
V
V
V
TA4014FE
OSCB
OSCE
I
BuffB
R
R
R
R
R
Fout
CC
1
2
3
4
5
−55~125
Rating
100
125
6
8
Circuit
Test
Typ.
640
670
⎯
⎯
⎯
⎯
⎯
5.6
6.9
15
1
V
V
V
V
V
Unit
mW
(Note 1)
CC
CC
CC
CC
CC
mA
°C
°C
V
Unit
kΩ
kΩ
kΩ
Ω
Ω
= 3.0 V
= 3.0 V
= 3.0 V
= 3.0 V
= 3.0 V
Test Condition
Weight: 0.003 g (typ.)
1.08
1.34
0.69
2.05
2.03
Min
Typ.
1.27
1.51
0.79
2.29
2.26
TA4014FE
2007-11-01
1.52
1.67
0.88
2.53
2.52
Max
Unit
mA
V
V
V
V
Related parts for ta4014fe
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Toshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [SILICON N CHANNEL 1GBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [Power Module]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
ta4014fe Summary of contents
Page 1
... TA4014FE Use for Crystal Oscillators Features • Bias resistors, a transistor for oscillation and a transistor for buffer are packed in one package; hence, TA4014FE can easily compose a crystal oscillator. • TA4014FE comes with a 6-pin thin ultra-compact package (1.6 mm × 1.6 mm) and is suitable for super-high density mounting ...
Page 2
... Marking Equivalent Circuit Diagram 2 TA4014FE 2007-11-01 ...
Page 3
... Package Dimensions Weight: 0.003 g (typ.) 3 TA4014FE 2007-11-01 ...
Page 4
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 4 TA4014FE 20070701-EN GENERAL 2007-11-01 ...