ta4012afe TOSHIBA Semiconductor CORPORATION, ta4012afe Datasheet
ta4012afe
Manufacturer Part Number
ta4012afe
Description
Uhf Wide Band Amplifier Applications
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TA4012AFE.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TA4012AFE
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
ta4012afe(TE85L
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
UHF Wide Band Amplifier Applications
Features
•
•
•
Absolute Maximum Ratings
Marking
Low current: I
Wide band: f = 2.0 GHz (3dB down)
Operating supply voltage: V
Supply voltage 1
Supply voltage 2
Total power dissipation
Operating temperature
Storage temperature
Note:
Note 1: When V
Note 2: When mounted on the glass epoxy of 2.5 cm
5
1
OUT
V
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
CC
U 4
2
GND
CC
COLLECTOR
CC
= 6.5 mA
4
3
is operated at less than 1/4 duty cycle
IN
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
(Note 1)
(Note 2)
CC
= 1.5~2.2 V
(Ta = 25°C)
TA4012AFE
Symbol
V
V
T
T
P
CC
CC
opr
stg
D
1
2
−55~150
−40~85
Rating
2
300
2.2
× 1.6 t
3
1
Unit
mW
°C
°C
V
V
Weight: 0.003 g (typ.)
TA4012AFE
2007-11-01
Related parts for ta4012afe
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Toshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [SILICON N CHANNEL 1GBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [Power Module]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
ta4012afe Summary of contents
Page 1
... Note 2: When mounted on the glass epoxy of 2.5 cm Marking OUT COLLECTOR GND IN CC TA4012AFE = 1.5~2.2 V (Ta = 25°C) Symbol Rating Unit 300 mW D −40~85 T opr −55~150 T stg 2 × 1 TA4012AFE Weight: 0.003 g (typ °C °C 2007-11-01 ...
Page 2
... 1.5 GHz ⎪S22⎪ 1.5 GHz 1.5 GHz Po1dB 1.5 GHz. 1000 TA4012AFE Min Typ. Max 4.5 6.5 8.5 ⎯ (Note3) 1.8 2.0 ⎯ ⎯ 6 7.5 ⎯ −22 ⎯ ⎯ −6.5 ⎯ ⎯ −7.5 ⎯ ⎯ ...
Page 3
... Package Dimensions Weight: 0.003 g (typ.) 3 TA4012AFE 2007-11-01 ...
Page 4
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 4 TA4012AFE 20070701-EN GENERAL 2007-11-01 ...