hx6408 Honeywell International's Solid State Electronics Center (SSEC), hx6408 Datasheet
hx6408
Related parts for hx6408
hx6408 Summary of contents
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... HX6408 Advanced Information HX6408 512k x 8 STATIC RAM The 512K x 8 Radiation Hardened Static RAM is a high performance 524,288 word x 8-bit static random access memory with optional industry-standard functionality fabricated with Honeywell’s radiation hardened Silicon On Insulator (SOI) technology, and is designed for use in low voltage systems operating in radiation environments ...
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... NCS and NOE input buffers. If this signal is not used it must be connected to VDD. This signal is asynchronous. The HX6408 may be ordered without the sleep mode option and pin 36 is then a NC. ...
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... HX6408 Advanced Information TRUTH TABLE NCS NSL NWE NOE VIH or VIL, NOE=H: High Z output state maintained for NCS=X, NWE=X RADIATION Total Ionizing Radiation Dose The SRAM will meet all stated functional and electrical specifications over the entire operating temperature range after the specified total ionizing radiation dose ...
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... HX6408 Advanced Information RADIATION HARDNESS RATINGS (1) Parameter Total Dose Transient Dose Rate Upset Transient Dose Rate Survivability Soft Error Rate Neutron Fluence (1) Device will not latch up due to any of the specified radiation exposure conditions. (2) Operating conditions (unless otherwise specified): VDD=3.0V to 3.6V, TA=-55 ABSOLUTE MAXIMUM RATINGS (1) ...
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... HX6408 Advanced Information DC ELECTRICAL CHARACTERISTICS Symbol Parameter IDDSB Static Supply Current TA=25°C TA=125°C IDDOP3 Static Supply Current Deselected IDDOPW Dynamic Supply Current, Selected (Write) IDDOPR Dynamic Supply Current, Selected (Read) IDDOP1 Dynamic Supply Current, Deselected IDDOP2 Dynamic Supply Current, Sleep ...
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... HX6408 Advanced Information DATA RETENTION CHARACTERISTICS Symbol Parameter VDR Data Retention Voltage IDR Data Retention Current (1) Typical operating conditions: TA=25°C, pre-radiation. (2) Worst case operating conditions: TA=-55°C to +125°C, post dose at 25°C TESTER EQUIVALENT LOAD CIRCUIT 1.9V 249 DUT Output * C = 5pf for TWQZ, TSHQZ, TPLQZ, and TGHQZ ...
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... HX6408 Advanced Information ASYCHRONOUS READ CYCLE AC TIMING CHARACTERISTICS (1) Symbol Parameter TAVAVR Address Read Cycle Time TAVQV Address Access Time TAXQX Address Change to Output Invalid Time TSLQV Chip Select Access Time TSLQX Chip Select Output Enable Time TSHQZ Chip Select Output Disable Time ...
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... HX6408 Advanced Information ASYNCHRONOUS WRITE CYCLE AC TIMING CHARACTERISTICS (1) Symbol Parameter TAVAVW Write Cycle Time (4) TWLWH Write Enable Write Pulse Width TSLWH Chip Select to End of Write Time TDVWH Data Valid to End of Write Time TAVWH Address Valid to End of Write Time TWHDX Data Hold after End of Write Time ...
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... HX6408 Advanced Information DYNAMIC ELECTRICAL CHARACTERISTICS Asynchronous Operation The RAM is asynchronous in operation. Read and Write cycles are controlled by NWE, NCS, NSL, and Address signals. Read Operation To perform a valid read operation, both chip select and output enable (NOE) must be low and not sleep (NSL) and write enable (NWE) must be high ...
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... HX6408 Advanced Information /TPLDX time, respectively. The minimum write cycle time is TAVAV. QUALITY AND RADIATION HARDNESS ASSURANCE Honeywell maintains a high level of product integrity through process control, utilizing statistical process control, a complete “Total Quality Assurance System,” a computer data base process performance tracking system and a radiation-hardness assurance strategy ...
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... HX6408 Advanced Information PACKAGE OUTLINE ORDERING INFORMATION ( 6408 PART NUMBER PROCESS X = SOI Source H = Honeywell PACKAGE DESIGNATION K = Known Good Die - = Bare Die (no package) (1) Orders may be faxed to 763-954-2051. Please contact our Customer Service Representative at 763-954-2888 for further information. (2) Engineering Device Description: Parameters are tested -55 (3) With the Non-Sleep Mode option, Pin no-connect (NC), and is not wirebonded to the chip ...