r8a66120ffa Renesas Electronics Corporation., r8a66120ffa Datasheet

r8a66120ffa

Manufacturer Part Number

r8a66120ffa

Description

4m-bit X 2 Multiple Field Memory

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.R8A66120FFA.pdf (15 pages)

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Mode Descriptions

R8A66120FFA

Description

Features

Application

Pin Configuration (Top view)

REJ03F0161-0170 Rev.1.70 May.16.2008

4M-bit x 2 MULTIPLE FIELD MEMORY

page 1 of 14

4M-bit, which uses high-performance silicon gate process technology.

R8A66120FFA is high-speed field memory with two FIFO (First In First Out) memories of

•Total memory Capacity

•High speed operation

•Output hold time

•Supply voltage

•Variable length delay bit

•Synchronous write/read operation

•3 states output

•Package

W-CDMA base station, Digital PPC, Digital TV,VTR and so on.

DB<3:0>

CKB

WRESB

WEB

The 2 pieces of 1024K-word x 4-bit

FIFO can be operated completely

independently.

2-system individual input

2-system individual output

DA<3:0>

CKA

WRESA

WEA

cycle time

output access time 6.0ns(Max.)

1024K-word

( 48pins 7x7mm body LQFP )

4bit bus I/F

1K-word = 1024-words

1024K-w

PLQP0048KB-A (48P6Q-A)

1024K-w

FIFO

4-bit

QB<3:0>

RRESB

REB

QA<3:0>

RRESA

REA

10.0ns(Min.)

1.0ns(Min.)

3.3 ± 0.3V

8Mega-bit

Outline: PLQP0048KB-A (48P6Q-A)

fmax = 100MHz

RJJ03FXXXREJ03F0161-0170

May.16.2008

Rev.1.70

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