tpcp8503 TOSHIBA Semiconductor CORPORATION, tpcp8503 Datasheet
tpcp8503
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tpcp8503 Summary of contents
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... Rating Unit V 600 V CBO V 600 V CEO EBO 100 2 1 150 ° −55 to 150 °C stg 1 TPCP8503 Unit: mm 0.33±0.05 0. 0.475 0. 0.65 2.9±0.1 A 0.8±0.05 0.025 S +0.1 S 0.28 0.17±0.02 -0.11 +0.13 1.12 -0.12 +0.13 1.12 -0.12 +0.1 0.28 -0. COLLECTOR 6. EMITTER 3. COLLECTOR 7 ...
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... mA 0 (sat MHz Figure2. Marking(Note 3) 8503 2 TPCP8503 Min Typ. Max ― ― 100 ― ― 100 600 ― ― 80 ― ― 100 ― 300 ― ― 1.0 ― ― ...
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... −55° 0.3 100 0.1 0.03 0.01 30 100 0.1 0 Common emitter −55°C 0.3 100 0.1 0.03 0.01 30 100 0.1 0 TPCP8503 h – 100 −55° 100 Collector current – (sat 100 Collector current ...
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... Curves should be applied in thermal limited area. (Single non-repetitive pulse) Ta=25℃ Mounted on FR4 board 2 (Cu pad 645mm ,glass epoxy, t=1.6mm) 100 (s) w 100 μs※ 10 ms※ 1 ms※ 10 s※* 100 ms※* 100 1000 ( TPCP8503 1000 2006-11-16 ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 TPCP8503 20070701-EN 2006-11-16 ...