tpcp8503 TOSHIBA Semiconductor CORPORATION, tpcp8503 Datasheet

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tpcp8503

Manufacturer Part Number
tpcp8503
Description
Toshiba Transistor Silicon Npn Triple Diffused Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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TPCP8503
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High-Voltage Switching Applications
Absolute Maximum Ratings
High breakdown voltage: V
Low saturation voltage: V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (Note 1)
Base current
Collector power dissipation
(Note 2)
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Characteristics
TOSHIBA Transistor Silicon NPN Triple Diffused Type
(I
C
CE (sat)
Pulse
t=10s
CEO
DC
DC
= 20 mA, I
= 600 V
= 1.0 V (max)
(Ta = 25°C)
Symbol
V
V
V
TPCP8503
B
T
I
P
CBO
CEO
EBO
I
CP
I
T
stg
C
B
= 0.5 mA)
C
j
−55 to 150
Rating
600
600
100
150
2.2
1.1
50
25
7
1
Unit
mA
mA
°C
°C
W
W
V
V
V
Weight: 0.36 g (typ.)
1. NC
2. COLLECTOR
3. COLLECTOR
4. COLLECTOR
JEDEC
JEITA
TOSHIBA
0.475
S
0.33±0.05
8
1
0.025
0.65
2.9±0.1
0.17±0.02
0.05
S
M
5. NC
6. EMITTER
7. NC
8. BASE
5
4
2-3V1D
TPCP8503
A
2006-11-16
B
0.28
1.12
1.12
0.28
A
0.8±0.05
Unit: mm
+0.13
+0.13
+0.1
+0.1
-0.11
-0.11
0.05
-0.12
-0.12
M
B

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tpcp8503 Summary of contents

Page 1

... Rating Unit V 600 V CBO V 600 V CEO EBO 100 2 1 150 ° −55 to 150 °C stg 1 TPCP8503 Unit: mm 0.33±0.05 0. 0.475 0. 0.65 2.9±0.1 A 0.8±0.05 0.025 S +0.1 S 0.28 0.17±0.02 -0.11 +0.13 1.12 -0.12 +0.13 1.12 -0.12 +0.1 0.28 -0. COLLECTOR 6. EMITTER 3. COLLECTOR 7 ...

Page 2

... mA 0 (sat MHz Figure2. Marking(Note 3) 8503 2 TPCP8503 Min Typ. Max ― ― 100 ― ― 100 600 ― ― 80 ― ― 100 ― 300 ― ― 1.0 ― ― ...

Page 3

... −55° 0.3 100 0.1 0.03 0.01 30 100 0.1 0 Common emitter −55°C 0.3 100 0.1 0.03 0.01 30 100 0.1 0 TPCP8503 h – 100 −55° 100 Collector current – (sat 100 Collector current ...

Page 4

... Curves should be applied in thermal limited area. (Single non-repetitive pulse) Ta=25℃ Mounted on FR4 board 2 (Cu pad 645mm ,glass epoxy, t=1.6mm) 100 (s) w 100 μs※ 10 ms※ 1 ms※ 10 s※* 100 ms※* 100 1000 ( TPCP8503 1000 2006-11-16 ...

Page 5

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 TPCP8503 20070701-EN 2006-11-16 ...

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