tpcp8604 TOSHIBA Semiconductor CORPORATION, tpcp8604 Datasheet

no-image

tpcp8604

Manufacturer Part Number
tpcp8604
Description
Toshiba Transistor Silicon Npn Triple Diffused Mesa Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
High-Voltage Switching Applications
Absolute Maximum Ratings
Figure1. Circuit Configuration
High breakdown voltage: V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Note 1 : Please use devices on condition that the junction temperature is below 150℃.
Note 2 : Mounted on FR4 board( glass epoxy, 1.6mm thick, Cu area: 645mm
Note 3 :● on lower left of the marking indicates Pin 1.
※ Weekly code: (three digits)
Note 4 : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
8
1
Characteristics
7
2
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
(One low-order digits of calendar year)
Year of manufacture
6
3
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
Pulse(Note 1)
DC (Note 1)
5
4
t=10s
DC
CEO
= −400 V
P
(Ta = 25°C)
C
Symbol
V
V
V
TPCP8604
(Note 2)
T
I
CBO
CEO
EBO
I
CP
I
T
Figure2.Marking(Note 3)
stg
C
B
j
8
1
7
8604
2
−55 to 150
Rating
−0.25
−400
−400
−150
6
−0.3
−2.2
−1.1
3
−7
−1
1
5
4
Unit
°C
°C
W
V
V
V
A
A
Lot No.
Type
(Weekly code)
2
)
Weight: 0.05 g (typ.)
JEDEC
JEITA
TOSHIBA
0.475
1. NC
2. COLLECTOR
3. COLLECTOR
4. COLLECTOR
S
0.33±0.05
8
1
0.025
0.65
2.9±0.1
0.17±0.02
0.05
S
M
5. NC
6. EMITTER
7. NC
8. BASE
5
4
2-3V1D
TPCP8604
A
2007-06-07
B
1.12
1.12
0.28
0.28
A
0.8±0.05
Unit: mm
+0.1
+0.13
+0.13
+0.1
-0.11
-0.11
0.05
-0.12
-0.12
M
B

Related parts for tpcp8604

tpcp8604 Summary of contents

Page 1

... I CP −0. −2.2 P (Note −1.1 −150 T ° −55 to 150 °C stg Figure2.Marking(Note 8604 ※ TPCP8604 0.33±0.05 0. 0.475 0.65 2.9±0 0.025 S 0.28 0.17±0.02 1.12 1.12 0. COLLECTOR 6. EMITTER 3. COLLECTOR COLLECTOR 8. BASE JEDEC ― ...

Page 2

... MHz μ Input I t stg = − Duty cycle ≤ TPCP8604 Min Typ. Max −10 ― ― −1 ― ― −400 ― ― 140 ― 450 140 ― 400 −0.4 −1.0 ― ...

Page 3

... Pulse test -1 -200 -100 0 −0.2 -20 0 (V) Base-emitter voltage V −10 Common emitter IC/ Pulse test −1 −0.1 −0.01 −300 −1 Collector current I −300 3 TPCP8604 I – 100℃ 25 −55 −0.4 −0.6 −0.8 −1 −1.2 ( – (sat 100°C −55 25 − ...

Page 4

... Collector−emitter voltage – Curves should be applied in thermal limited area. (Single non-repetitive pulse) Ta=25℃ Mounted on FR4 board 2 (Cu pad 645mm ,glass epoxy, t=1.6mm) 0 Pulse width t ( μs* 10 μs* -1000 (V) 4 TPCP8604 100 1000 2007-06-07 ...

Page 5

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 TPCP8604 20070701-EN 2007-06-07 ...

Related keywords