tpc8108 TOSHIBA Semiconductor CORPORATION, tpc8108 Datasheet
tpc8108
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tpc8108 Summary of contents
Page 1
... DGR GSS 1 1 157 0. 150 ° 150 °C stg 1 TPC8108 Unit: mm JEDEC Š JEITA Š TOSHIBA 2-6J1B Weight: 0.080 g (typ.) Circuit Configuration 2002-03-12 ...
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... January to December are denoted by letters respectively.) Symbol Max Unit R 65.8 °C/W th (ch-a) R 125 °C/W th (ch-a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 0.8 (unit: mm) (b) 1.0 mH TPC8108 FR-4 25.4 25.4 0.8 (unit: mm) 2002-03-12 ...
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... Duty 1 gs1 Q gd (Ta 25°C) Symbol Test Condition I DRP DSF TPC8108 Min Typ. Max Unit 0.8 2 3510 pF 250 600 7 OUT ...
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... Drain-source voltage 0.5 0.4 0.3 0.2 0 Gate-source voltage (ON) 100 0.3 100 0.1 0.3 1 Drain current I 4 TPC8108 DS Common source Ta 25°C Pulse test 2.8 2.6 2.4 2 (V) DS – Common source Ta 25°C Pulse test 5.5 2 (V) GS – ...
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... Ambient temperature Ta (°C) Dynamic input/output characteristics 200 Total gate charge Q 5 TPC8108 – Common source Ta 25°C Pulse test 0.6 0.8 1.0 1.2 (V) DS – Ta Common source Pulse test ...
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... Safe operating area 100 I D max (pulse ms 0.1 * Single pulse Ta 25°C Curves must be derated linearly with increase in temperature. V DSS max 0.01 0.01 0 Drain-source voltage V ( Single pulse 0 100 Pulse width t (S) w 100 6 TPC8108 (2) (1) 1000 2002-03-12 ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice. 7 TPC8108 000707EAA 2002-03-12 ...