tpc8208 TOSHIBA Semiconductor CORPORATION, tpc8208 Datasheet

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tpc8208

Manufacturer Part Number
tpc8208
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type U-mosiii
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
Absolute Maximum Ratings
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power
dissipation
(t = 10 s)
Drain power
dissipation
(t = 10 s)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
Channel temperature
Storage temperature range
Note: Note 1, Note 2, Note 3, Note 4 and Note 5: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Small footprint due to small and thin package
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
(Note 2a)
(Note 2b)
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
DC
Pulse
Single-device
operation (Note 3a)
Single-device value
at dual operation
Single-device
operation (Note 3a)
Single-device value
at dual operation
GS
(Note 2a, 3b, 5)
= 20 kΩ)
DSS
th
(Note 3b)
(Note 3b)
(Note 1)
(Note 1)
(Note 4)
= 0.5 to 1.2 V (V
= 10 μA (max) (V
(Ta = 25°C)
DS (ON)
Symbol
V
P
P
P
P
V
V
E
E
T
I
I
T
DGR
GSS
D (1)
D (2)
D (1)
D (2)
fs
DSS
I
DP
AR
AS
AR
stg
D
ch
TPC8208
| = 6.3 S (typ.)
DS
= 38 mΩ (typ.)
DS
= 10 V, I
= 20 V)
−55 to 150
Rating
0.75
0.45
16.3
±12
150
1.5
1.1
0.1
20
20
20
5
5
1
D
= 200 μA)
Unit
mJ
mJ
°C
°C
W
W
V
V
V
A
A
Weight: 0.080 g (typ.)
Circuit Configuration
JEDEC
JEITA
TOSHIBA
8
1
7
2
2-6J1E
6
3
2006-11-16
TPC8208
5
4
Unit: mm

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tpc8208 Summary of contents

Page 1

... GSS 1 1.1 D (2) P 0. 0.45 D ( 150 °C ch −55 to 150 T °C stg 1 TPC8208 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1E Weight: 0.080 g (typ.) Circuit Configuration 2006-11-16 ...

Page 2

... Symbol Single-device operation R th (ch-a) (1) (Note 3a) dual operation R th (ch-a) (2) (Note 3b) Single-device operation R th (ch-a) (1) (Note 3a) dual operation R th (ch-a) (2) (Note 3b) b) Device mounted on a glass-epoxy board ( Ω TPC8208 Max Unit 83.3 °C/W 114 167 °C/W 278 FR-4 25.4 × 25.4 × 0.8 (unit: mm) (b) 2006-11-16 ...

Page 3

... Q g ∼ − gs1 Q gd (Ta = 25°C) Symbol Test Condition ⎯ I DRP = DSF TPC8208 Min Typ. Max = 0 V ⎯ ⎯ ± ⎯ ⎯ 10 ⎯ ⎯ 20 ⎯ ⎯ 8 ⎯ 0.5 1.2 ⎯ 57 100 ⎯ ⎯ ...

Page 4

... Ta = 25°C 16 Pulse test 0.4 Drain-source voltage V 1.0 0.8 0.6 0.4 0.2 1 Gate-source voltage V R 1000 100 0.1 1 Drain current I 4 TPC8208 I – 2.6 2 2.2 2.0 1.8 1 1.4 V 0.8 1.2 1.6 2.0 ( – Common source Ta = 25°C Pulse test 2 (V) GS – ...

Page 5

... C rss 0.2 0 −80 −40 100 Dynamic input/output characteristics 20 (Note 2a (Note 2b 200 0 5 TPC8208 I – Common source Ta = 25°C Pulse test −0.4 −0.6 −0.8 −1 −1.2 −1.4 Drain-source voltage V ( – Ta ...

Page 6

... Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b 0 Pulse width t (S) w (Note 3b) 30 100 6 TPC8208 (4) (3) (2) (1) 100 1000 2006-11-16 ...

Page 7

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPC8208 20070701-EN 2006-11-16 ...

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