tpc8209 TOSHIBA Semiconductor CORPORATION, tpc8209 Datasheet

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... V GSS 1 1.1 D(2) P 0. 0.45 D ( 150 ° °C í55~150 stg 1 TPC8209 Unit: mm JEDEC Š JEITA Š TOSHIBA 2-6J1E Weight: 0.08 g (typ.) Circuit Configuration 2003-02-18 ...

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... Symbol Max Single-device operation R 83.3 th (ch-a) (1) (Note 2a) dual operation R 114 th (ch-a) (2) (Note 2b) Single-device operation R 167 th (ch-a) (1) (Note 2a) dual operation R 278 th (ch-a) (2) (Note 2b) (b) b) Device mounted on a glass-epoxy board ( TPC8209 Unit °C/W FR-4 25.4 ´ 25.4 ´ 0.8 (unit: mm) 2003-02-18 ...

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... § (Ta = 25°C) Symbol Test Condition I — DRP DSF TPC8209 Min Typ. Max Unit — Š ±10 µA Š Š 10 µA 30 Š Š V ¾ ¾ 15 1.3 Š 2.5 V ¾ Š ...

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... Drain-source voltage V V 0.6 0.5 0.4 0.3 0.2 0 Gate-source voltage (ON) 1000 100 10 1 100 0.1 1 Drain current I 4 TPC8209 I – Common source Ta = 25°C Pulse test 3.5 3.2 3.1 3.0 2.9 2.8 2.7 2.6 VGS=2. (V) DS – Common source Ta = 25°C Pulse test ID=5A 2.5 1 ...

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... Coss 2 Crss 1 0 100 -80 -40 0 Ambient temperature Ta (°C) Dynamic input/output characteristics 40 30 VDS 20 VGS 10 0 200 Total gate charge Q 5 TPC8209 I – VGS=0V,-1V Common source Ta = 25°C Pulse test 0.8 1 – Common source ...

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... Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b 0 100 Pulse width t (S) w 100 6 TPC8209 (4) (3) (2) (1) 1000 2003-02-18 ...

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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 7 TPC8209 000707EAA 2003-02-18 ...