tpc8204 TOSHIBA Semiconductor CORPORATION, tpc8204 Datasheet

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tpc8204

Manufacturer Part Number
tpc8204
Description
Toshiba Field Effect Transistor Silicon Channel Type Umosii
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs
l Small footprint due to small and thin package
l Low drain−source ON resistance
l High forward transfer admittance : |Y
l Low leakage current
l Enhancement−mode
Maximum Ratings
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain curren
Drain power
dissipation
(t = 10s)
Drain power
dissipation
(t = 10s)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Single-device value at operation
Channel temperature
Storage temperature range
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5) please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
(Note 2a)
(Note 2b)
Characteristics
(Note 2a, Note 3b, Note 5)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
D C
Pulse
Single-device
operation
Single-device value
at dual operation
Single-device
operation
Single-device value
at dual operation
GS
= 20kΩ)
(Ta = 25°C)
(Note 3a)
(Note 3a)
(Note 3b)
(Note 3b)
: I
: V
(Note 1)
(Note 4)
(Note 1)
DSS
th
= 0.5~1.2 V (V
= 10 µA (max) (V
: R
Symbol
V
P
P
P
V
V
P
E
E
T
I
I
T
DS (ON)
DGR
GSS
D (1)
D (1)
D (2)
DSS
I
DP
D(2)
AR
AS
AR
stg
D
ch
fs
TPC8204
| = 18 S (typ.)
DS
= 16 mΩ (typ.)
= 10 V, I
DS
−55~150
Rating
= 20 V)
0.75
0.45
46.8
±12
150
1.5
1.1
0.1
20
20
24
6
6
1
D
= 200 µA)
Unit
mJ
mJ
°C
°C
W
W
V
V
V
A
A
Weight: 0.080 g (typ.)
Circuit Configuration
JEDEC
JEITA
TOSHIBA
2-6J1E
2003-02-18
TPC8204
Unit: mm

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tpc8204 Summary of contents

Page 1

... DSS V 20 DGR V ±12 GSS 1.5 D (1) P 1.1 D(2) P 0.75 D (1) P 0.45 D ( 150 ch T −55~150 stg 1 TPC8204 JEDEC ― A JEITA ― TOSHIBA 2-6J1E Weight: 0.080 g (typ.) W Circuit Configuration W A °C °C 2003-02-18 Unit: mm ...

Page 2

... Symbol Single-device operation R th (ch-a) (1) (Note 3a) dual operation R th (ch-a) (2) (Note 3b) Single-device operation R th (ch-a) (1) (Note 3a) dual operation R th (ch-a) (2) (Note 3b) b) Device mounted on a glass-epoxy board ( Ω TPC8204 Max Unit 83.3 114 °C/W 167 278 FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) 2003-02-18 ...

Page 3

... ≈ (Ta = 25°C) Symbol Test Condition I — DRP DSF TPC8204 Min Typ. Max — — ±10 — — — — 15 — — 0.5 — 1.2 — — — ...

Page 4

... TPC8204 2003-02-18 ...

Page 5

... TPC8204 2003-02-18 ...

Page 6

... TPC8204 2003-02-18 ...

Page 7

... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 7 TPC8204 000707EAA 2003-02-18 ...

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