ipb034n06n3

Manufacturer Part Numberipb034n06n3
DescriptionOptimos Tm 3 Power Transistor Power Mosfet
ManufacturerInfineon Technologies Corporation
ipb034n06n3 datasheet
 
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Type
(TM)
OptiMOS
3 Power-Transistor
Features
• for sync. rectification, motor-drives and dc/dc SMPS
• Excellent gate charge x R
DS(on)
• Very low on-resistance R
DS(on)
• N-channel, normal level
• 100% avalanche tested
• Qualified according to JEDEC
• Pb-free plating; RoHS compliant
IPB034N06N3 G
Type
Package
PG-TO263-7
034N06N
Marking
Maximum ratings, at T
=25 °C, unless otherwise specified
j
Parameter
Continuous drain current
3)
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
J-STD20 and JESD22
2)
Current is limited by bondwire; with an R
3)
See figure 3 for more detailed information
4)
See figure 13 for more detailed information
Rev. 2.4
Product Summary
V
DS
R
DS(on),max
product (FOM)
I
D
1)
for target applications
Symbol Conditions
2)
I
T
=25 °C
D
C
T
=100 °C
C
I
T
=25 °C
D,pulse
C
=25 Ω
4)
E
I
=100 A, R
AS
D
GS
V
GS
P
T
=25 °C
tot
C
T
, T
j
stg
=0.9 K/W the chip is able to carry 164 A.
thJC
page 1
IPB034N06N3 G
60
V
3.4
mΩ
100
A
Value
Unit
100
A
100
400
149
mJ
±20
V
167
W
-55 ... 175
°C
55/175/56
2008-07-17

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ipb034n06n3 Summary of contents

  • Page 1

    ... D,pulse C =25 Ω =100 =25 °C tot stg =0.9 K/W the chip is able to carry 164 A. thJC page 1 IPB034N06N3 3.4 mΩ 100 A Value Unit 100 A 100 400 149 mJ ±20 V 167 W -55 ... 175 °C 55/175/56 2008-07-17 ...

  • Page 2

    ... GSS = =100 A DS(on |>2 DS(on)max =100 (one layer, 70 µm thick) copper area for drain page 2 IPB034N06N3 G Values Unit min. typ. max 0.9 K 0.1 1 µ 100 - 1 100 ...

  • Page 3

    ... oss =25 ° S,pulse =100 =25 ° = =80A /dt =100 A/µ page 3 IPB034N06N3 G Values Unit min. typ. max. - 8000 11000 pF - 1700 2300 - 161 - - ...

  • Page 4

    ... C 4 Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µs 100 µ 0.1 DC 0.02 0. [V] DS page 4 IPB034N06N3 G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.01 single pulse - [s] p 200 0 ...

  • Page 5

    ... Typ. forward transconductance g =f 200 160 120 ° [V] GS page 5 IPB034N06N3 =25 ° 4 100 I [A] D =25 ° 100 I [ 150 150 2008-07-17 ...

  • Page 6

    ... Forward characteristics of reverse diode I =f parameter [V] DS page 6 IPB034N06N3 930 µA 93 µA - 100 140 T [° 175 °C, 98% 25 °C 175 °C 25 °C, 98% 0.5 1 1.5 V [V] SD 180 ...

  • Page 7

    ... AV 16 Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPB034N06N3 =100 A pulsed gate [nC] gate 100 Q g ate ...

  • Page 8

    ... PG-TO263-7 (D²-Pak 7pin) Rev. 2.4 page 8 IPB034N06N3 G 2008-07-17 ...

  • Page 9

    ... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.4 page 9 IPB034N06N3 G 2008-07-17 ...

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