Type
(TM)
OptiMOS
3 Power-Transistor
Features
• for sync. rectification, motor-drives and dc/dc SMPS
• Excellent gate charge x R
DS(on)
• Very low on-resistance R
DS(on)
• N-channel, normal level
• 100% avalanche tested
• Qualified according to JEDEC
• Pb-free plating; RoHS compliant
IPB034N06N3 G
Type
Package
PG-TO263-7
034N06N
Marking
Maximum ratings, at T
=25 °C, unless otherwise specified
j
Parameter
Continuous drain current
3)
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
J-STD20 and JESD22
2)
Current is limited by bondwire; with an R
3)
See figure 3 for more detailed information
4)
See figure 13 for more detailed information
Rev. 2.4
Product Summary
V
DS
R
DS(on),max
product (FOM)
I
D
1)
for target applications
Symbol Conditions
2)
I
T
=25 °C
D
C
T
=100 °C
C
I
T
=25 °C
D,pulse
C
=25 Ω
4)
E
I
=100 A, R
AS
D
GS
V
GS
P
T
=25 °C
tot
C
T
, T
j
stg
=0.9 K/W the chip is able to carry 164 A.
thJC
page 1
IPB034N06N3 G
60
V
3.4
mΩ
100
A
Value
Unit
100
A
100
400
149
mJ
±20
V
167
W
-55 ... 175
°C
55/175/56
2008-07-17