ipb034n06n3 Infineon Technologies Corporation, ipb034n06n3 Datasheet

ipb034n06n3
Manufacturer Part Number	ipb034n06n3
Description	Optimos Tm 3 Power Transistor Power Mosfet
Manufacturer	Infineon Technologies Corporation
ipb034n06n3 datasheet	1. IPB034N06N3.pdf (9 pages)

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Type

(TM)

OptiMOS

3 Power-Transistor

Features

• for sync. rectification, motor-drives and dc/dc SMPS

• Excellent gate charge x R

DS(on)

• Very low on-resistance R

DS(on)

• N-channel, normal level

• 100% avalanche tested

• Qualified according to JEDEC

• Pb-free plating; RoHS compliant

IPB034N06N3 G

Type

Package

PG-TO263-7

034N06N

Marking

Maximum ratings, at T

=25 °C, unless otherwise specified

Parameter

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Gate source voltage

Power dissipation

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

J-STD20 and JESD22

Current is limited by bondwire; with an R

See figure 3 for more detailed information

See figure 13 for more detailed information

Rev. 2.4

Product Summary

DS(on),max

product (FOM)

for target applications

Symbol Conditions

=25 °C

=100 °C

=25 °C

D,pulse

=25 Ω

=100 A, R

=25 °C

tot

, T

stg

=0.9 K/W the chip is able to carry 164 A.

thJC

page 1

IPB034N06N3 G

3.4

mΩ

100

Value

Unit

100

400

149

±20

167

-55 ... 175

°C

55/175/56

2008-07-17

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ipb034n06n3 Summary of contents
Page 1 ... D,pulse C =25 Ω =100 =25 °C tot stg =0.9 K/W the chip is able to carry 164 A. thJC page 1 IPB034N06N3 3.4 mΩ 100 A Value Unit 100 A 100 400 149 mJ ±20 V 167 W -55 ... 175 °C 55/175/56 2008-07-17 ... Page 2 ... GSS = =100 A DS(on \|>2 DS(on)max =100 (one layer, 70 µm thick) copper area for drain page 2 IPB034N06N3 G Values Unit min. typ. max 0.9 K 0.1 1 µ 100 - 1 100 ... Page 3 ... oss =25 ° S,pulse =100 =25 ° = =80A /dt =100 A/µ page 3 IPB034N06N3 G Values Unit min. typ. max. - 8000 11000 pF - 1700 2300 - 161 - - ... Page 4 ... C 4 Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µs 100 µ 0.1 DC 0.02 0. [V] DS page 4 IPB034N06N3 G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.01 single pulse - [s] p 200 0 ... Page 5 ... Typ. forward transconductance g =f 200 160 120 ° [V] GS page 5 IPB034N06N3 =25 ° 4 100 I [A] D =25 ° 100 I [ 150 150 2008-07-17 ... Page 6 ... Forward characteristics of reverse diode I =f parameter [V] DS page 6 IPB034N06N3 930 µA 93 µA - 100 140 T [° 175 °C, 98% 25 °C 175 °C 25 °C, 98% 0.5 1 1.5 V [V] SD 180 ... Page 7 ... AV 16 Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPB034N06N3 =100 A pulsed gate [nC] gate 100 Q g ate ... Page 8 ... PG-TO263-7 (D²-Pak 7pin) Rev. 2.4 page 8 IPB034N06N3 G 2008-07-17 ... Page 9 ... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.4 page 9 IPB034N06N3 G 2008-07-17 ...

ipb034n06n3 Summary of contents

Page 1
... D,pulse C =25 Ω =100 =25 °C tot stg =0.9 K/W the chip is able to carry 164 A. thJC page 1 IPB034N06N3 3.4 mΩ 100 A Value Unit 100 A 100 400 149 mJ ±20 V 167 W -55 ... 175 °C 55/175/56 2008-07-17 ...
Page 2
... GSS = =100 A DS(on |>2 DS(on)max =100 (one layer, 70 µm thick) copper area for drain page 2 IPB034N06N3 G Values Unit min. typ. max 0.9 K 0.1 1 µ 100 - 1 100 ...
Page 3
... oss =25 ° S,pulse =100 =25 ° = =80A /dt =100 A/µ page 3 IPB034N06N3 G Values Unit min. typ. max. - 8000 11000 pF - 1700 2300 - 161 - - ...
Page 4
... C 4 Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µs 100 µ 0.1 DC 0.02 0. [V] DS page 4 IPB034N06N3 G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.01 single pulse - [s] p 200 0 ...
Page 5
... Typ. forward transconductance g =f 200 160 120 ° [V] GS page 5 IPB034N06N3 =25 ° 4 100 I [A] D =25 ° 100 I [ 150 150 2008-07-17 ...
Page 6
... Forward characteristics of reverse diode I =f parameter [V] DS page 6 IPB034N06N3 930 µA 93 µA - 100 140 T [° 175 °C, 98% 25 °C 175 °C 25 °C, 98% 0.5 1 1.5 V [V] SD 180 ...
Page 7
... AV 16 Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPB034N06N3 =100 A pulsed gate [nC] gate 100 Q g ate ...
Page 8
... PG-TO263-7 (D²-Pak 7pin) Rev. 2.4 page 8 IPB034N06N3 G 2008-07-17 ...
Page 9
... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.4 page 9 IPB034N06N3 G 2008-07-17 ...

ipb034n06n3

ipb034n06n3

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ipb034n06n3 Summary of contents

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