ipb034n06n3 Infineon Technologies Corporation, ipb034n06n3 Datasheet - Page 4

• Manufacturer Part Number: ipb034n06n3
• Description: Optimos Tm 3 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.4
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
200
160
120
10
10
10
10
10
80
40
DS
0
-1
3
2
1
0
C
10
0
); T
)
-1
limited by on-state
resistance
C
p
=25 °C; D =0
50
10
0
T
V
C
DS
100
[°C]
[V]
DC
10 ms
10
1 ms
1
150
100 µs
10 µs
1 µs
200
10
page 4
2
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
0.01
120
100
=f(t
0.1
80
60
40
20
C
1
0
10
); V
p
0
0.02
)
-5
0.05
0.01
0.2
0.1
0.5
single pulse
GS
≥10 V
10
p
/T
-4
50
10
-3
T
t
C
p
100
[°C]
[s]
10
-2
IPB034N06N3 G
150
10
-1
2008-07-17
200
10
0